28.02.2014 Views

Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

REFERENCES<br />

[29] http://www.wmi.badw.de/methods/leed_rheed.htm<br />

[30] Y. B. Bolkhovityanov, O. P. Pchelyakov: GaAs epitaxy on Si substrates:<br />

modern status <strong>of</strong> research and engineering, Physics-Uspekhi 51, P. (2008)<br />

[31] J. E. Ayers: Heteroepitaxy <strong>of</strong> <strong>semiconductor</strong>s : theory, <strong>growth</strong>, and characterization,<br />

CRC Press Taylor & Francis Group, (2007)<br />

[32] P. M. Ajayan, J. Carlson, T. Bayburt, and H. S. Nalwa (editor): Nanostructured<br />

materials and nanotechnology, Academic Press, (2002)<br />

[33] M. A. Herman, H. Sitter, and Helmut K. V. Lotsch (editor): <strong>Molecular</strong> Beam<br />

Epitaxy Fundamentals and Current Status, Springer Verlag, (1996)<br />

[34] C. Heyn, and W. Hansen: Desorption <strong>of</strong> InAs quantum dots , Journal <strong>of</strong><br />

Crystal Growth 251, P. 218 - 222 (2003)<br />

[35] S. B. Ogale (editor): Thin Films and Heterostructures for Oxide Electronics<br />

, Springer, (2005)<br />

[36] K. L. Chopra: Thin Film Phenomena , McGraw Hill, (1969)<br />

[37] D. A. Woolf, D. I. Westwood, and R.H. Williams: Characterization <strong>of</strong> the<br />

MBE <strong>growth</strong> <strong>of</strong> GaAs/Si(100) as a function <strong>of</strong> epilayer thickness, Journal <strong>of</strong><br />

Crystal Growth 100, P. 635 - 639 (1990)<br />

[38] V. Lehmann, K. Mitani, R. Stengl, T. Mii, and U. Gösele: Bubble-Free Wafer<br />

Bonding <strong>of</strong> GaAs and InP on Silicon in a Microcleanroom, Japanese Journal<br />

<strong>of</strong> Applied Physics 28, P. 2141 - 2143 (1989)<br />

[39] K. Umeno, Y. Furukawa, A. Wakahara, R. Noma, H. Okada, H. Yonezu,<br />

Y. Takagi and H. Kan: MBE <strong>growth</strong> <strong>of</strong> GaAsN/GaP(N) quantum wells with<br />

abrupt heterointerfaces for photonics applications on Si substrates, Journal <strong>of</strong><br />

Crystal Growth 311, P. 1748 - 1753 (2009)<br />

132

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!