Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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Conferences Contributions: Tariq Al-Zoubi, Muhammad Usman, Mohamed Benyoucef, and Johann Peter Reithmaier, "Growth Of III/V quantum dots and dashes on silicon substrate: Formation and Characterization", 16th International on Molecular Beam Epitaxy (MBE 2010), Berlin - Germany, 22nd - August 27th. Muhammad Usman, Tariq Al-Zoubi, Mohamed Benyoucef, and Johann Peter Reithmaier, "Nanostructuring of silicon for the MBE growth of site-controlled InGaAs quantum dots", 37th International Conference on Micro and Nano Engineering (MNE 2011) Berlin - Germany, 19th - 23rd September 2011. M. Benyoucef, M. Usman, T. Al Zoubi, A. Gushterov, T. Pfau, J.P. Reithmaier, "Pre-patterned silicon and GaAs substrates for the growth of III-V nanostructures: morphological and optical properties", Deutsche Physikalische Gesellschaft (DPG 2012) (invited, Presentation). Berlin - Germany, 25th - 30th August. Tariq Al-Zoubi, Emil-Mihai Pavelescu, Johann Peter Reithmaier,"Growth of InAs quantum dots on silicon substrates: Formation and characterization", Deutsche Physikalische Gesellschaft (DPG, 2009) - Dresden - Germany (Presentation). Tariq Al-Zoubi, Muhammad Usman, Mohamed Benyoucef, and Johann Peter Reithmaier, "MBE growth of self-assembled InAs quantum dots and dashes on silicon substrate", Deutsche Physikalische
Gesellschaft (DPG 2011) Conference, Dresden, Germany, DPG 2011 - Dresden - Germany (Presentation1) Muhammad Usman, Tariq Al-Zoubi, Mohamed Benyoucef, and Johann Peter Reithmaier, (Presentation 2)" Nanostructuring of silicon for the growth of site-controlled III/V quantum dots". Mingjian Wu and Achim Trampert, Tariq Al-Zoubi, Muhammad Usman, Mohamed Benyoucef, and Johann Peter Reithmaier, "Microstructure of InAs nano-crystals embedded in Si", Deutsche Physikalische Gesellschaft (DPG 2012) Conference - Berlin - Germany (Poster).
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Molecular Beam Epitaxial Growth of
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Gutachter (Supervisors): 1. Prof. D
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patterns indicating a 2D smooth sur
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(MEE = migration enhance epitaxy) u
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CONTENTS 3.4.4 Planar Defects Assoc
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CONTENTS xii
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Introduction thesis a detailed stud
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Introduction 1.1.2 Thesis Approach
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Introduction 1.2 Thesis Outline The
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Theoretical Background of Semicondu
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Heteroepitaxial Growth of III-V Sem
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Experimental Growth and Characteriz
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MBE Growth of Self-Assembled InAs a
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Page 110 and 111: MBE Growth of Self-Assembled InAs a
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Page 142 and 143: Conclusions substrates, respectivel
Page 144 and 145: REFERENCES [8] J. M. Gerard, O. Cab
Page 146 and 147: REFERENCES [29] http://www.wmi.badw
Page 148 and 149: REFERENCES [49] M. R. Brenner: GaP/
Page 150 and 151: REFERENCES [66] Y. Ishida, T. Takah
Page 152 and 153: REFERENCES [84] A. Garcia, C. M. Ma
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Page 156 and 157: REFERENCES [116] H. Usui, H. Yasuda
Page 158 and 159: REFERENCES [133] Grassman, T. J. Br
Page 162 and 163: Nomenclature
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Page 166 and 167: like to thank all member of the Ins
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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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