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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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Abbreviation<br />

MBE<br />

AFM<br />

QD<br />

CMOS<br />

QWR<br />

DOS<br />

OEIC<br />

SA<br />

MD<br />

MT<br />

APD<br />

GPA<br />

RHEED<br />

SK<br />

FM<br />

VW<br />

FWHM<br />

UHV<br />

PGA<br />

PL<br />

HR<br />

TEM<br />

SEM<br />

MEE<br />

LED<br />

RMS<br />

DSAR<br />

HR-XRD<br />

EBL<br />

APBs<br />

EBE<br />

EBL<br />

FIB<br />

NW<br />

ZB<br />

InAs<br />

GaAs<br />

InGaAs<br />

GaP<br />

DOE<br />

Descriptions<br />

<strong>Molecular</strong> <strong>beam</strong> epitaxy<br />

Atomic force microscopy<br />

Quantum dot<br />

Complementary metal oxide <strong>semiconductor</strong><br />

Quantum wire<br />

Density <strong>of</strong> state function<br />

Optoelectronic integrated circuit<br />

Self assembled<br />

Mist dislocation<br />

Micro twin<br />

Anti phase domain<br />

Geometry phase analysis<br />

Reection high energy diraction<br />

Stranski-Krastanov <strong>growth</strong> mode<br />

Frank-van der Merwe <strong>growth</strong> mode<br />

Volmer-Weber <strong>growth</strong> mode<br />

Full width at half maximum<br />

Ultra high vacuum<br />

Post <strong>growth</strong> annealing<br />

Photoluminescence<br />

High resolution<br />

Transmission electron microscopy<br />

Scanning electron microscopy<br />

Migration enhanced epitaxy<br />

Light-emitting diodes<br />

Root mean square<br />

Double atomic reconstruction<br />

High resolution x ray diraction<br />

Equivalent <strong>beam</strong> pressure<br />

Anti phase boundaries<br />

Electron <strong>beam</strong> evaporator<br />

Electron <strong>beam</strong> lithography<br />

Focused ion <strong>beam</strong><br />

Nanowire<br />

Zinc blend<br />

Indium arsenide<br />

Gallium arsenide<br />

Indium gallium arsenide<br />

Gallium phosphide<br />

Density <strong>of</strong> state function

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