Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
REFERENCES<br />
[84] A. Garcia, C. M. Mateo, M. Defensor, A. Salvador, H. K. Hui, C. B.<br />
Boothroyd and E. Philpott: Inuence <strong>of</strong> As 4 ux on the <strong>growth</strong> kinetics, structure,<br />
and optical properties <strong>of</strong> InAs/GaAs quantum dots, Journal <strong>of</strong> Applied<br />
Physics 102, 073526 (2007)<br />
[85] C. Gilfert, E. M. Pavelescu, J. P. Reithmaier: Inuence <strong>of</strong> the As 2 /As 4<br />
<strong>growth</strong> modes on the formation <strong>of</strong> quantum dot-like InAs islands grown on<br />
InAlGaAs/InP (100), Applied Physics Letters 96, 191903 (2010)<br />
[86] M. Benyoucef, T. AlZoubi, J. P. Reithmaier, M. Wu, and A. Trampert:<br />
Nanostructured hybrid material based on highly mismatched <strong>III</strong>-V nanocrystals<br />
fully embedded in silicon, To be published (2013)<br />
[87] V. N. Petrov, N. K. Polyakov, V. A. Egorov, G. E. Cirlin, N. D. Zakharov,<br />
P. Werner, V. M. Ustinov, D. V. Denisov, N. N. Ledentsov, and Zh. I. Alferov:<br />
Study <strong>of</strong> Multilayer Structures with InAs Nanoobjects in a Silicon Matrix, Semiconductor<br />
- low diemensional system 34, 7 (2000)<br />
[88] N. D. Zakharov, P. Werner, U. Gosele, R. Heitz, D. Bimberg, N. N.<br />
Ledentsov, V. M. Ustinov, B. V. Volovik, Zh. I. Alferov, N. K. Polyakov, V.<br />
N. Petrov, V. A. Egorov, and G. E. Cirlin: Structure and optical properties <strong>of</strong><br />
Si/InAs/Si layers grown by molecular <strong>beam</strong> epitaxy on Si substrate, Applied<br />
Physics Letters 76, P. 2677-2679 (2000)<br />
[89] O. Madelung: Semiconductors-Basic Data, Springer (1996)<br />
[90] S. C. Jain, M. Willander, and H. Maes: Stresses and strains in epilayers,<br />
stripes and quantum structures <strong>of</strong> <strong>III</strong> - V compound <strong>semiconductor</strong>s, Semiconductor<br />
Science and Technology 11, P. 641 (1996)<br />
[91] C. B. Lioutas, A. Delimitisi, and A. Georgakilas: TEM investigation <strong>of</strong><br />
the dependence <strong>of</strong> structural defects on prelayer formation in GaAs-on-Si thin<br />
lms, Thin Solid Films 336, P. 96 - 99 (1998)<br />
138