Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

More documents

Recommendations

Info

REFERENCES [116] H. Usui, H. Yasuda, and H. Mori: Morphology and lattice coherency in GaAs nanocrystals grown on Si(100) surface, Applied Physics Letters 89, 173127 (2006) [117] J. He, K. Yadavalli, Z. Zhao, N. Li, Z. Hao, K. Wang, and A. Jacob: InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy, Nanotechnology 19, 455607 (2008) [118] P. Atkinson, O. G. Schmidt, S. P. Bremner, and D. A. Ritchie: Formation and ordering of epitaxial quantum dots, Comptes Rendus Physique 9, P. 788 - 803 (2008) [119] C. Vieu, F. Carcenac, A. pin, Y. Chen, M. Mejias, A. Lebib, L. Manin- Ferlazzo, L. Couraud, and H. Launois: Electron beam lithography: resolution limits and applications, Applied Surface Science 164, P. 111 - 117 (2000) [120] M. Usman, T. AlZoubi, M. Benyoucef, and J. P. Reithmaier: Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In 0.15 Ga 0.85 As/GaAs nanostructures, Microelectronic Engineering 97, P. 59 - 63 (2012) [121] M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof: Focused ion beam implantation induced site-selective growth of InAs quantum dots, Applied Physics Letters 91, 123108 (2007) [122] B. D. Gerardot, G. Subramanian, S. Minvielle, H. Lee, J.A. Johnson, W. V. Schoenfeld, D. Pine, J.S. Speck, and P.M. Petro: Self-assembling quantum dot lattices through nucleation site engineering, Journal of Crystal Growth 236, P. 647 - 654 (2002) [123] M. Sadeghi, and S. Wang: Growth of GaP on Si substrates by solid-source molecular beam epitaxy, Journal of Crystal Growth 227-228, P. 279 - 283 (2001) 142
REFERENCES [124] Y. Komatsu, K. Hosotani, T. Fuyuki, and H. Matsunami: Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buer Layers, Japanese Journal of Applied Physics 36, P. 5425-5430 (1997) [125] H. Mori, M. Ogasawara, M. Yamamoto, and M. Tachikawa: New hydride vapor phase epitaxy for GaP growth on Si, Applied Physics Letters 51, P. 1245-1247 (1987) [126] B. Kunert, I. Naemeth, S. Reinhard, K. Volz, and W. Stolz: Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate, Thin Solid Films 517, P. 140 - 143 (2008) [127] K. Tu, J. W. Mayer, and L. C. Feldman: Electronic thin lm science: for electrical engineers and materials scientists, Macmillan (1992) [128] R. Corkish: Some candidate materials for lattice-matched liquid-phase epitaxial growth on silicon, Solar Cells 31, P. 537-548 (1991) [129] Y. Takagi, H. Yonezu, K. Samonji, T. Tsuji, and N. Ohshima: Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates, Journal of Crystal Growth 187, P. 42-50 (1998) [130] V. Narayanan, N. Sukidi, K. J. Bachmann, and S. Mahajan: Origins of defects in self assembled GaP islands grown on Si(001) and Si(111), Thin Solid Films 357, P. 53 - 56 (1999) [131] N. Sukidia, K. J. Bachmanna, V. Narayananb, and S. Mahajanb: Initial Stages of Heteroepitaxy of GaP on Selected Silicon Surfaces, Journal of the Electrochemical Society 164, P. 1147-1150 (1999) [132] R. M. Sieg, S. A. Ringel, S .M. Ting, E. A. Fitzgerald, and R. N. Sacks: Anti-Phase Domain-Free Growth of GaAs on Ocut (001) Ge Wafers by Molecular Beam Epitaxy with Suppressed Ge Outdiusion, Journal of Electronic Materials 27, 900 (1998) 143
Page 1:
Molecular Beam Epitaxial Growth of
Page 4 and 5:
Gutachter (Supervisors): 1. Prof. D
Page 6 and 7:
patterns indicating a 2D smooth sur
Page 8 and 9:
(MEE = migration enhance epitaxy) u
Page 10 and 11:
viii
Page 12 and 13:
CONTENTS 3.4.4 Planar Defects Assoc
Page 14 and 15:
CONTENTS xii
Page 16 and 17:
Introduction thesis a detailed stud
Page 18 and 19:
Introduction 1.1.2 Thesis Approach
Page 20 and 21:
Introduction 1.2 Thesis Outline The
Page 22 and 23:
Theoretical Background of Semicondu
Page 24 and 25:
Page 26 and 27:
Page 28 and 29:
Page 30 and 31:
Page 32 and 33:
Page 34 and 35:
Page 36 and 37:
Heteroepitaxial Growth of III-V Sem
Page 38 and 39:
Page 40 and 41:
Page 42 and 43:
Page 44 and 45:
Page 46 and 47:
Page 48 and 49:
Page 50 and 51:
Page 52 and 53:
Page 54 and 55:
Page 56 and 57:
Page 58 and 59:
Page 60 and 61:
Page 62 and 63:
Page 64 and 65:
Experimental Growth and Characteriz
Page 66 and 67:
Page 68 and 69:
Page 70 and 71:
Page 72 and 73:
Page 74 and 75:
Page 76 and 77:
Page 78 and 79:
MBE Growth of Self-Assembled InAs a
Page 80 and 81:
Page 82 and 83:
Page 84 and 85:
Page 86 and 87:
Page 88 and 89:
Page 90 and 91:
Page 92 and 93:
Page 94 and 95:
Page 96 and 97:
Page 98 and 99:
Page 100 and 101:
Page 102 and 103:
Page 104 and 105:
Page 106 and 107: MBE Growth of Self-Assembled InAs a
Page 118 and 119: MBE Growth of InAs and InGaAs Quant
Page 130 and 131: Optimization of MEE and MBE growth
Page 142 and 143: Conclusions substrates, respectivel
Page 144 and 145: REFERENCES [8] J. M. Gerard, O. Cab
Page 146 and 147: REFERENCES [29] http://www.wmi.badw
Page 148 and 149: REFERENCES [49] M. R. Brenner: GaP/
Page 150 and 151: REFERENCES [66] Y. Ishida, T. Takah
Page 152 and 153: REFERENCES [84] A. Garcia, C. M. Ma
Page 154 and 155: REFERENCES [100] M. Felici, P. Gall
Page 158 and 159: REFERENCES [133] Grassman, T. J. Br
Page 160 and 161: Conferences Contributions: Tariq Al
Page 162 and 163: Nomenclature
Page 164 and 165: REFERENCES symbol Descriptions γ f
Page 166 and 167: like to thank all member of the Ins
Page 168: REFERENCES Erklärung Hiermit versi
show all

Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?