Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
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CONTENTS<br />
3.4.4 Planar Defects Associated to Polar on Non-Polar Epitaxy . 41<br />
3.4.4.1 Anti-Phase Domains . . . . . . . . . . . . . . . . 42<br />
3.4.4.2 Stacking Faults . . . . . . . . . . . . . . . . . . 46<br />
3.4.4.3 Micro Twins . . . . . . . . . . . . . . . . . . . . . 47<br />
4 Experimental Growth and Characterization Techniques 49<br />
4.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49<br />
4.2 <strong>Molecular</strong> Beam Epitaxy Technique . . . . . . . . . . . . . . . . . 50<br />
4.2.1 Reection High Energy Electron Diraction . . . . . . . . 52<br />
4.2.2 Electron Beam Evaporator system for Silicon Homoepitaxy 54<br />
4.3 Atomic Force Microscopy . . . . . . . . . . . . . . . . . . . . . . . 56<br />
4.4 High Resolution Transmission Electron Microscopy . . . . . . . . 59<br />
5 MBE Growth <strong>of</strong> Self-Assembled InAs and InGaAs Quantum<br />
Dots Embedded in Silicon Matrix 63<br />
5.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63<br />
5.2 Experimental Details . . . . . . . . . . . . . . . . . . . . . . . . . 64<br />
5.3 Results and Discussion . . . . . . . . . . . . . . . . . . . . . . . . 64<br />
5.3.1 Surface Preparation . . . . . . . . . . . . . . . . . . . . . . 65<br />
5.3.2 Growth <strong>of</strong> InAs QDs Directly on Silicon Substrate . . . . . 67<br />
5.3.2.1 Dependence on Substrate Orientation . . . . . . . 67<br />
5.3.2.2 Ga Treatment . . . . . . . . . . . . . . . . . . . . 67<br />
5.3.3 InAs Quantum Dots Grown on Silicon Buer Layer . . . . 69<br />
5.3.3.1 Homoepitaxy <strong>of</strong> Silicon Buer Layer . . . . . . . 69<br />
5.3.3.2 InAs Coverage . . . . . . . . . . . . . . . . . . . 71<br />
5.3.3.3 Growth Temperature . . . . . . . . . . . . . . . . 71<br />
5.3.3.4 V/<strong>III</strong> Ratio . . . . . . . . . . . . . . . . . . . . . 72<br />
5.3.3.5 Indium Growth Rate . . . . . . . . . . . . . . . . 73<br />
5.4 Self-Assembled InAs QDs Embedded in Si Matrix . . . . . . . . . 75<br />
5.4.1 Experimental Details . . . . . . . . . . . . . . . . . . . . . 76<br />
5.4.2 TEM Characterization <strong>of</strong> Si/InAs/Si Structure . . . . . . . 77<br />
5.4.3 The Inuence <strong>of</strong> Post-Growth Annealing and Si Capping . 80<br />
5.4.4 Growth Model <strong>of</strong> InAs QDs embedded in Si Matrix . . . . 87<br />
5.4.5 Geometric Phase Analysis Strain vs. Material Strain . . . 91<br />
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