Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

Introduction
1.2 Thesis Outline
The structure of the thesis is constructed as follows:
• Chapter 1 is the introduction to the research work status, challenges, the
scientic objectives of current project (Monalisa) and thesis approach, with
a complete overview of the thesis structure.
• Chapter 2 serves as an introduction to fundamental physics of low dimensional
systems (nanostructures), including the motivation to use silicon in
this research work.
• Chapter 3 discusses the main concepts of epitaxy and challenges of the heteroeptiaxial
growth of the III-V quantum dots (QDs) on silicon substrate,
including the basics physics of the planar defects (micro twins (MTs), mist
dislocations (MDs) and stacking faults (SFs), etc.) associated to polar on
non-polar epitaxy.
• Chapter 4 deals with the growth and characterization techniques used to
produce all the results reported in this research work, which serve as a reference
to better interpret and understand of the experimental investigations.
• Chapter 5 provides a detail study of the growth and characterization of
InAs and InGaAs QDs embedded in Si matrix, including the surface preparation
treatment prior to the MBE epitaxy.
• Chapter 6 focusses on the growth and characterization of InAs and InGaAs
QDs embedded in GaAs matrix on both at and pre-patterned Si substrates.
• Chapter 7 introduces the optimization of GaP buer layer growth on at
Si substrate using dierent growth modes like MEE and MBE.
• Chapter 8 concludes the results of the present thesis and gives outlook for
the future work.
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