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xxiii πανελληνιο συνεδριο φυσικης στερεας καταστασης & επιστημης ...

xxiii πανελληνιο συνεδριο φυσικης στερεας καταστασης & επιστημης ...

xxiii πανελληνιο συνεδριο φυσικης στερεας καταστασης & επιστημης ...

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Energy Loss Rates of Hot Electrons in Semiconducting Carbon Nanotubes<br />

Margarita Tsaousidou *<br />

Materials Science Department, University of Patras, Patras 26 504, Greece<br />

*Email: rtsaous@upatras.gr<br />

The study of the energy relaxation provides significant information about the carrier-phonon coupling in low-dimensional<br />

semiconductors [1]. In the present paper we calculate the energy loss rate, P, of hot 1D electrons in semiconducting singlewall<br />

carbon nanotubes (SWCNTs) due to their coupling to stretching and breathing phonons. A brief description of the<br />

theoretical formalism is given and numerical calculations of P are performed for electron temperatures in the range 4-300 K<br />

and for various values of the Fermi energy E F . These results can be particularly useful for steady-state electric field heating<br />

or time-dependent experiments [2].<br />

The SWCNT can be regarded as a long and infinitesimally thin cylinder of radius R. The electrons are free to move along<br />

the direction of the nanotube axis (z-direction) while their motion in the xy-plane is quantized. The electron spectrum consists<br />

of several 1D subbands associated with the quantized electron motion. We assume that the electrons are in internal thermal<br />

equilibrium at a temperature T e higher than the lattice temperature T lat and their distribution is described by the Fermi-Dirac<br />

distribution function. This approximation, the so-called electron temperature model, is valid when the electron-electron<br />

relaxation time is much less than the energy loss time of the electrons. For simplicity reasons we consider only electronphonon<br />

(e-p) scattering within the lowest 1D electron subband (quantum limit). The Fermi level is assumed to be close to the<br />

ground subband minimum in order to eliminate non-parabolicity effects. The e-p interaction is described via a deformation<br />

potential. It can be shown that for intrasubband scattering within the ground subband only the stretching and the breathing<br />

phonon modes contribute to the e-p coupling. In the long-wavelength limit the stretching mode has a linear dispersion while<br />

the breathing mode is dispersionless [3].<br />

The average energy-loss rate due to e-p scattering is given by [4]<br />

P =<br />

1<br />

N<br />

∑<br />

q<br />

ω<br />

where, N is the total number of electrons, ω q is the frequency of a phonon with wave vector q (q is along the z-axis), and<br />

dN q /dt is the rate of change of the phonon distribution due to phonon emission and absorption processes. The above equation<br />

can be written in the following convenient form:<br />

q<br />

dΝ<br />

dt<br />

1<br />

ep 2<br />

P = ∑ ω<br />

| H ( q) | [ N q ( Te<br />

) − N q ( Tlat<br />

)] Im χ(q,<br />

ω<br />

N<br />

q<br />

q q )<br />

where, |H ep (q)| is the e-p coupling matrix element, N q (T) is the Bose-Einstein distribution at temperature T and Im χ(q,ω q ) is<br />

the imaginary part of the electronic polarizability function [5]. For qR

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