xxiii πανελληνιο ÏƒÏ Î½ÎµÎ´ÏÎ¹Î¿ Ï†Ï ÏƒÎ¹ÎºÎ·Ï‚ στερεας καταστασης & επιστημης ...

Fig. 1. Laser mask movement during the MN
crystallization procedure.
Fig. 2. SEM image of the MN crystallized
polysilicon film.
Fig. 3. Energy barrier height for X- and Y-oriented
TFTs.
Fig. 4. DLTS spectra decomposition to three
components at high (HT), medium (MT) and low (LT)
temperatures, for X-oriented TFTs.
10 -6
10 -6
10 -5 Before stress
10 -7
10 -7
10 -8
10 -8
I ds
(A)
10 -5 Before stress
10 -9
10 -10
I ds
(A)
10 -9
10 -10
t stress
=5 h
t stress
=16 h
10 -11
10 -12
t stress
=5 h
t stress
=16 h
10 -11
10 -12
10 -13
-6 -4 -2 0 2 4 6
V gs
(v)
(a)
10 -13
-6 -4 -2 0 2 4 6
Fig. 5. I ds -V gs characteristics after successive stress cycles for, a) X-oriented TFT V gstress =4V, V dstress =8V, b) Y-oriented
TFT V gstress =5V, V dstress =10V
0,24
V gs
(v)
(b)
0,22
0,20
X direction W=2m
X direction W=8m
Y direction W=2m
Y direction W=8m
250
200
S (V/decade)
0,18
0,16
0,14
0,12
0,10
0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
L (m)
Fig. 6. Subthreshold slope S as a function of channel length
L.
(cm 2 /V·sec)
150
100
50
X direction W=2m
X direction W=8m
Y direction W=2m
Y direction W=8m
0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
L (m)
Fig. 7. Field-effect mobility as a function of channel
length L.
69