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(Cd,Mn)Te - Instytut Fizyki PAN

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BIBLIOGRAFIA DO ROZDZIAŁU 51. http://www.acrorad.co.jp/us/index.html2. A. Musa et al. “Poperties of electroless gold contacts on p-type <strong>Cd</strong><strong>Te</strong>” J. Appl.Phys. 54 (6) (1983).3. D. Rioux, D. W. Niles, H. Höchst, “Zn<strong>Te</strong>: A potential interlayer to form lowresistance back contacts in <strong>Cd</strong>S/<strong>Cd</strong><strong>Te</strong> solar cells” J. Appl. Phys. 73 (12), (1993)4. J. K. Furdyna, J. Kossut; „Semiconductors and semimetals” Vol. 25 DilutedMagnetic Semiconductors (1988).5. T. Sebestyen , “Models for ohmic contacts on graded crystalline or amorphousheterojunctions” Solid State Electronics, Vol. 25, No. 7, (1982).6. C. J. Palmstrem, R. D. U. Morgan, Gallium Arsenide Materials, Devices &(1985). ‏,(‏Ch.6‎ Cirenits, (Chichester, UK Wiley,7. H. Fritzsche, “Electronic properties of Amorphous Semiconductors” Amorphousand Liquid Semiconductors, J. Tanc, Brown University Providence Rhode IslandUSA (1974).8. H-Y. Wey, “Surface of amorphous semiconductors and their contacts withmetals” Phys. Rev. B Vol. 13, No 8, (1976).9. M. Olszowy, „Badanie zależności oporu elektrycznego różnych ciał stałych odtemperatury”.10. K. Kim et al. “Gamma-Ray response of semi-insulating <strong>Cd</strong><strong>Mn</strong><strong>Te</strong> crystals” IEEETNS vol. 56 (2009).150

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