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ETTC'2003 - SEE

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In order to optimize the phase noise of such a circuit, it<br />

is essential to optimize the second term of this equation,<br />

which corresponds to the synchronized oscillator residual<br />

phase noise. This can be done by optimizing the free<br />

running oscillator phase noise and the locking bandwidth.<br />

Both parameters are difficult to simulate, but a CAD<br />

approach can lead to interesting results providing a precise<br />

enough model is available for the oscillator active device.<br />

Another efficient approach, which may be used<br />

complementarily with CAD, is to implement a device<br />

selection procedure using a residual phase noise test bench<br />

which will help in choosing the transistor and eventually<br />

the resonator. In case of direct injection of the optical<br />

signal in the oscillator active device, Kurokawa’s phase<br />

noise equations are still valid but the computing of the<br />

locking bandwidth is more difficult and requires an<br />

electro-optic model of the photo-transistor.<br />

The above described modeling approach has been used<br />

to design our receivers, and to analyze the phase noise<br />

results. However, a prior requirement to design such an<br />

optical link is to choose the light source.<br />

III. OPTICAL LINK : THE EMITTER<br />

The optical source has a strong influence on the<br />

overall noise performance, and must be chosen carefully.<br />

Because of the large commercial offering in the field of<br />

telecommunications laser modules, a laser diode emitting<br />

at 1.5 µm is an attractive solution. Moreover, these<br />

modules include an optical isolator and a thermal<br />

regulation which are both necessary in applications where<br />

the link quality is under question. The RF or microwave<br />

signal can then be applied directly to the laser diode<br />

(direct modulation) or to a Mach-Zehnder modulator<br />

(indirect modulation). The direct modulation<br />

configuration has been chosen, mainly because it is<br />

simpler and cheaper than the indirect modulation.<br />

The device manufacturers do not specify the laser 1/f<br />

noise, and only the high frequency laser noise is specified<br />

through the relative intensity noise parameter (Rin).<br />

However, it is this Rin which may determine the phase<br />

noise far from the carrier, and a laser featuring a low Rin<br />

value should be chosen. This has led us towards a medium<br />

power single mode DFB laser : a Mitsubishi 1.55 µm laser<br />

module, with an optical output power of 10 dBm and a<br />

typical Rin of -155 dBc/Hz (0.5 to 3 GHz). Another laser<br />

module, Alcatel 1905 LMI, with an higher maximum<br />

output power of 15 dBm, has been chosen by our industry<br />

partner (Alcatel Space).<br />

IV. OPTICAL LINK : THE RF RECEIVERS<br />

The 10 MHz signal of an Oven Controlled Crystal<br />

Oscillator (OCXO) features very good spectral<br />

characteristics. The goal is to transmit such a signal with<br />

almost no degradation of its phase noise. The laser Rin<br />

already prevent this transmission far from the carrier by<br />

creating a noise floor already higher than the OCXO noise<br />

floor.<br />

The optically synchronized oscillator must filter this<br />

noise far from the carrier and thus, should feature an<br />

extremely low phase noise floor. Moreover, this oscillator<br />

should not be as complex and costly as the reference<br />

OCXO. It should be a simple and inexpensive module.<br />

Therefore, a low 1/f noise silicon bipolar transistor has<br />

been chosen to design the amplifiers used in the oscillator<br />

or just after the photodiode. In the oscillator, this<br />

transistor is associated with a low cost AT-cut quartz<br />

crystal resonator, which is very stable versus temperature<br />

near 25°C. These two devices (the Si transistor and the<br />

resonator) have been chosen by considering the results of<br />

a residual phase noise experiment at 10 MHz. Both feature<br />

excellent residual phase noise level, and particularly far<br />

from the carrier.<br />

Figure 1<br />

The three receiver circuits used at 10 MHz<br />

Three circuit configurations have been compared : a<br />

classical receiver with an amplified InGaAs photodiode<br />

(Thorlabs FGA04), the same receiver followed by the<br />

quartz resonator acting as a filter, and finally the optically<br />

synchronized oscillator (Figure 1). The result of a phase<br />

noise measurement in these three configurations is shown<br />

in Figure 2. In this case, the Alcatel laser module has been<br />

used, with an optical output power of about 7.3 dBm and<br />

an amplitude modulation index of about 0.8.<br />

The improvement due to the quartz filter is important<br />

compare to the conventional receiver, but the best result is<br />

obtained with the synchronized oscillator. Moreover, the<br />

phase noise floor of the amplified photodiode link rises<br />

with the optical losses in the link. On the contrary, the

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