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Online proceedings - EDA Publishing Association

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11-13 <br />

May 2011, Aix-en-Provence, France<br />

<br />

Parameter Design of Triaxial Microaccelerometers<br />

with Piezoelectric Thin-Film<br />

Jyh-Cheng YU<br />

National Kaohsiung First University of Science and Technology<br />

2 Jhuoyue Rd.,Nanzih , Kaohsiung City 811,Taiwan, R.O.C.<br />

Chungda Lee<br />

Department of Mechanical and Automation Engineering<br />

I-Shou University, 1, Sec. 1, Syuecheng Rd., Dashu, Kaohsiung 840, Taiwan, R.O.C.<br />

Abstract - This study proposes an analytical model for a<br />

high sensitivity piezoelectric thin film triaxial<br />

microaccelerometer, and investigates the influence of the<br />

fabrication processes on the parameter design. The structure<br />

design is consisted of four parallel suspension beams, a<br />

central seismic mass, and eight piezoelectric thin film<br />

transducers. The sensitivity consistence between out-of-plane<br />

and in-plane accelerations is a key issue for the following<br />

signal processing. A simplified system modeling scheme<br />

based on anisotropic material properties using area moment<br />

method and laminated beam theory is presented and applied<br />

to the parameter design. An optimized thickness ratio<br />

between piezoelectric thin film and the silicon substrate of<br />

the laminated supporting beam is derived to maximize the<br />

sensitivity. The study shows that the aspect ratio of the<br />

seismic mass is the deterministic factor to the differences<br />

among triaxial sensitivities. The triaxial sensitivity<br />

performances for two structure designs with the seismic<br />

masses fabricated using chemical wet etching and deep<br />

reactive ion etching (DRIE) are compared. The design using<br />

DRIE provides more even triaxial sensitivity, while the<br />

design using wet etching shows cost advantage with<br />

additional parameter constraints due to the required<br />

compensation pattern for convex corner etching.<br />

I. INTRODUCTION<br />

For the last two decades, the design and research of<br />

piezoelectric sensing accelerometers have drawn great<br />

attention due to the advantages of low cost, energy saving,<br />

simple structure, high sensitivity, and excellent dynamic<br />

performance. Bulk micromachining based piezoelectric<br />

accelerometers have a lower detection level that is suitable<br />

for precision measurement. Piezoelectric accelerometers<br />

consisted of a single seismic mass and cross supported beams<br />

have been investigated for uniaxial measurement [1][2][3]<br />

and triaxial measurement [4] applications. Most analytical<br />

models assume piezoelectric thin film for simplification.<br />

Hindrichsen [5] proposed an analytical model for a PZT thick<br />

film triaxial accelerometer based on anisotropic material<br />

tensors and Euler’s beam.<br />

In general, accelerometers with PZT thick film<br />

transducers have higher charge and voltage sensitivities in<br />

comparison with those thin film devices in the same given<br />

dimensions. Another configuration of piezoelectric thin-film<br />

triaxial microaccelerometers consisted of parallel beam<br />

suspensions and a central seismic mass has been studied<br />

[6][9]. Parallel beam suspensions provide higher sensitivity<br />

for in-plane accelerations comparing with those using a cross<br />

beam structure.<br />

Different fabrication processes of seismic mass, such as<br />

chemical wet etching and deep reactive ion etching (DRIE),<br />

affect the parameter design for device dimensions. Most of<br />

the triaxial accelerometers do not have equal sensitivity for<br />

all the three directions. Accelerometers fabricated using<br />

DRIE of a thick SOI wafer could provide better consistence<br />

of sensitivity in all the three orthogonal axes with a proper<br />

parameter design. On the other hand, wet etching process has<br />

a great cost advantage with dimensional limitations due to<br />

sloping walls and a required compensation pattern for convex<br />

corners.<br />

This work presents the system modeling and parameter<br />

design based on fabrication constraints of a triaxial<br />

piezoelectric accelerometer. The proposed configuration<br />

suspension of the device adopts parallel beams at both ends<br />

of a seismic mass using etching of (100) SOI wafer. This<br />

study adopts the area moment method to determine the<br />

stiffness matrix of the supporting beams describing the<br />

relationship between the end forces and moments and the<br />

boundary conditions. The elastic property of the suspension<br />

beams considers both the silicon beams and the piezoelectric<br />

films using the laminated beam theory based on anisotropic<br />

material properties. Analytical models of the resonant<br />

frequency and the sensitivity are verified with the results<br />

using finite element method to justify the model accuracy.<br />

Three axial sensitivities for applicable conditions of design<br />

geometry due to different fabrication processes are<br />

compared.<br />

II. DESIGN OF MICROACCELEROMETER<br />

The proposed microaccelerometer consists of a<br />

quadri-beam suspension, a seismic mass, and eight<br />

90

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