Online proceedings - EDA Publishing Association
Online proceedings - EDA Publishing Association
Online proceedings - EDA Publishing Association
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11-13 <br />
May 2011, Aix-en-Provence, France<br />
<br />
Parameter Design of Triaxial Microaccelerometers<br />
with Piezoelectric Thin-Film<br />
Jyh-Cheng YU<br />
National Kaohsiung First University of Science and Technology<br />
2 Jhuoyue Rd.,Nanzih , Kaohsiung City 811,Taiwan, R.O.C.<br />
Chungda Lee<br />
Department of Mechanical and Automation Engineering<br />
I-Shou University, 1, Sec. 1, Syuecheng Rd., Dashu, Kaohsiung 840, Taiwan, R.O.C.<br />
Abstract - This study proposes an analytical model for a<br />
high sensitivity piezoelectric thin film triaxial<br />
microaccelerometer, and investigates the influence of the<br />
fabrication processes on the parameter design. The structure<br />
design is consisted of four parallel suspension beams, a<br />
central seismic mass, and eight piezoelectric thin film<br />
transducers. The sensitivity consistence between out-of-plane<br />
and in-plane accelerations is a key issue for the following<br />
signal processing. A simplified system modeling scheme<br />
based on anisotropic material properties using area moment<br />
method and laminated beam theory is presented and applied<br />
to the parameter design. An optimized thickness ratio<br />
between piezoelectric thin film and the silicon substrate of<br />
the laminated supporting beam is derived to maximize the<br />
sensitivity. The study shows that the aspect ratio of the<br />
seismic mass is the deterministic factor to the differences<br />
among triaxial sensitivities. The triaxial sensitivity<br />
performances for two structure designs with the seismic<br />
masses fabricated using chemical wet etching and deep<br />
reactive ion etching (DRIE) are compared. The design using<br />
DRIE provides more even triaxial sensitivity, while the<br />
design using wet etching shows cost advantage with<br />
additional parameter constraints due to the required<br />
compensation pattern for convex corner etching.<br />
I. INTRODUCTION<br />
For the last two decades, the design and research of<br />
piezoelectric sensing accelerometers have drawn great<br />
attention due to the advantages of low cost, energy saving,<br />
simple structure, high sensitivity, and excellent dynamic<br />
performance. Bulk micromachining based piezoelectric<br />
accelerometers have a lower detection level that is suitable<br />
for precision measurement. Piezoelectric accelerometers<br />
consisted of a single seismic mass and cross supported beams<br />
have been investigated for uniaxial measurement [1][2][3]<br />
and triaxial measurement [4] applications. Most analytical<br />
models assume piezoelectric thin film for simplification.<br />
Hindrichsen [5] proposed an analytical model for a PZT thick<br />
film triaxial accelerometer based on anisotropic material<br />
tensors and Euler’s beam.<br />
In general, accelerometers with PZT thick film<br />
transducers have higher charge and voltage sensitivities in<br />
comparison with those thin film devices in the same given<br />
dimensions. Another configuration of piezoelectric thin-film<br />
triaxial microaccelerometers consisted of parallel beam<br />
suspensions and a central seismic mass has been studied<br />
[6][9]. Parallel beam suspensions provide higher sensitivity<br />
for in-plane accelerations comparing with those using a cross<br />
beam structure.<br />
Different fabrication processes of seismic mass, such as<br />
chemical wet etching and deep reactive ion etching (DRIE),<br />
affect the parameter design for device dimensions. Most of<br />
the triaxial accelerometers do not have equal sensitivity for<br />
all the three directions. Accelerometers fabricated using<br />
DRIE of a thick SOI wafer could provide better consistence<br />
of sensitivity in all the three orthogonal axes with a proper<br />
parameter design. On the other hand, wet etching process has<br />
a great cost advantage with dimensional limitations due to<br />
sloping walls and a required compensation pattern for convex<br />
corners.<br />
This work presents the system modeling and parameter<br />
design based on fabrication constraints of a triaxial<br />
piezoelectric accelerometer. The proposed configuration<br />
suspension of the device adopts parallel beams at both ends<br />
of a seismic mass using etching of (100) SOI wafer. This<br />
study adopts the area moment method to determine the<br />
stiffness matrix of the supporting beams describing the<br />
relationship between the end forces and moments and the<br />
boundary conditions. The elastic property of the suspension<br />
beams considers both the silicon beams and the piezoelectric<br />
films using the laminated beam theory based on anisotropic<br />
material properties. Analytical models of the resonant<br />
frequency and the sensitivity are verified with the results<br />
using finite element method to justify the model accuracy.<br />
Three axial sensitivities for applicable conditions of design<br />
geometry due to different fabrication processes are<br />
compared.<br />
II. DESIGN OF MICROACCELEROMETER<br />
The proposed microaccelerometer consists of a<br />
quadri-beam suspension, a seismic mass, and eight<br />
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