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Online proceedings - EDA Publishing Association

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interaction with the underlying materials. By analyzing the<br />

reflected microwave signals, the electrical properties of<br />

underlying materials can be evaluated. In this paper, some<br />

special samples with different thickness of dielectric films<br />

which plays the role of oxide layer created on the material<br />

surface were fabricated, and the measurement of electrical<br />

properties of materials under the oxide layer by the M-AFM<br />

was investigated in details.<br />

11-13 <br />

May 2011, Aix-en-Provence, France<br />

<br />

A<br />

Microwave generator<br />

Tunable<br />

short<br />

Measurement system<br />

Attenuator<br />

Multiplier<br />

Magic<br />

tee<br />

II.<br />

EXPERIMENTAL PROCEDURE<br />

A. Probe Fabrication<br />

To restrain the attenuation of microwave propagating in<br />

the probe, a non-doped GaAs wafer was used as the substrate<br />

of the probe. Wet etching was used to fabricate the probe<br />

because it is possible to obtain the desired structure by<br />

causing a side etching under the etching mask. The<br />

fabrication method and process of the M-AFM probe have<br />

been studied in details by Ju et al. [10,11].<br />

Topography<br />

B<br />

Tip<br />

Ag film<br />

Laser<br />

Microwave<br />

image<br />

Cantilever<br />

SiO oxide layer<br />

2<br />

Silicon substrate<br />

Detector<br />

Probe holder<br />

AFM<br />

Fig. 2. Schematic diagram of the M-AFM measurement<br />

system.<br />

The images of the cantilever and tip of M-AFM probe<br />

were taken by scanning electron microscopy (SEM), as<br />

shown in Fig. 1. Fig. 1A shows the forepart of cantilever, a<br />

sharp tip with a height of 7 μm was formed at the front of the<br />

cantilever. As shown in Fig. 1B, a nano-slit was introduced<br />

across the cantilever through the center of the tip by focus ion<br />

beam (FIB) fabrication. The width of the nano-slit is<br />

approximately 100 nm.<br />

Fig. 1. SEM images, A: the cantilever of M-AFM probe; B:<br />

a nano-slit across the probe tip introduced by FIB<br />

fabrication.<br />

B. Microwave Measurement System<br />

The measurements in this paper were carried out by a<br />

compact microwave instrument which is composed of an<br />

amplifier, a magic-Tee, an attenuator, a tunable short, and a<br />

diode detector [13], as shown in Fig. 2. Fig. 2A shows the<br />

flow chart of the operating microwave signals for<br />

measurements. The microwave signals working at a<br />

frequency f=94 GHz, which was generated by a microwave<br />

generator. Then the microwave signals were separated into<br />

two branches by the magic-Tee. One branch signal was sent<br />

to the M-AFM probe to sense the samples and then the<br />

reflected signal was received by the probe tip, as shown in<br />

Fig. 2B. Another branch signal was sent to the attenuator and<br />

then to the tunable-short to form a reference signal with a<br />

constant phase difference and a similar amplitude comparing<br />

with the reflected signal from the sample. The reference<br />

signal was determined by setting the output voltage of the<br />

detector to be a definite value when the M-AFM was set in<br />

air without the approaching, and this was carried out by<br />

adjusting the attenuator and the tunable-short. The reflected<br />

signal and the reference signal were finally synthesized by<br />

335

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