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Online proceedings - EDA Publishing Association

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piezoelectric displacement transducers. Each of the two<br />

opposite ends of the seismic mass is supported by two<br />

parallel suspension beams. The thickness of suspension<br />

beams is defined by the silicon-on-insulator (SOI). Two<br />

transducers are patterned on each suspension. From a proper<br />

interconnection among the transducers, triaxial accelerations<br />

can be measured without cross-axis interference [9].<br />

The design of the accelerometer depends on the processes<br />

of bulk micromachining for the seismic mass. The seismic<br />

mass can be fabricated from either Deep Reactive Ion<br />

Etching (DRIE) as shown Figure 1, or chemical wet etching<br />

as shown in Figure 2, following by dry etching to release the<br />

suspension beams. Flexibility for the crystalline orientation<br />

of suspension beams and high aspect ratio of seismic mass<br />

are possible for DRIE. The suspension beams are often [100]<br />

oriented in the previous studies [3][4][5][6]. Chemical wet<br />

etching of (100) silicon wafer using such as KOH and<br />

TMAH has the cost advantage over dry etching. However,<br />

the sloping walls of the seismic mass cause additional<br />

constraints in the dimensional design on account of the<br />

required convex corner compensation in the masking layer of<br />

wet etching. Also, the crystalline orientation of the<br />

suspension beams will be restricted to [110].<br />

Figure 1 Design of the accelerometer using DRIE dry etching for the seismic<br />

mass<br />

Figure 2 Design of the accelerometer using wet etching for the seismic mass<br />

The out-of-plane (z axial) acceleration will result in a<br />

symmetric vibration, and in-plane (x and y axial)<br />

accelerations will produce asymmetric and torsional<br />

vibrations. The inertia force will introduce bending and<br />

torsional stress on the beams that will produce electrical<br />

charge by the piezoelectric transducers. The seismic mass<br />

from dry etching often provides higher sensitivity because<br />

the distance between the surfaces of suspension beams to the<br />

11-13 <br />

May 2011, Aix-en-Provence, France<br />

<br />

center of mass is larger in contrast with that of the seismic<br />

mass from wet etching.<br />

III. ANALYTICAL MODEL<br />

The system model of the accelerometer is consisted of a<br />

mechanical subsystem and an electric subsystem. The<br />

mechanical subsystem is assumed a spring-mass-damper<br />

system. The equivalent stiffness of the suspension and the<br />

equivalent seismic mass are two deterministic factors for the<br />

structure modeling. Laminated beam theory is applied to<br />

obtain the equivalent bending rigidity of the supported beams.<br />

The application of area moment method provides the<br />

formulation of suspension stiffness for three vibration modes.<br />

The piezoelectric transducers convert beam stresses into<br />

output charge.<br />

A. Equivalent bending rigidity of the laminated beam<br />

The derivation of the structure model is based on the<br />

following assumptions:<br />

(1) the influence of electrodes on the beam stiffness is<br />

negligible;<br />

(2) the seismic mass and rim of the structure are rigid;<br />

(3) the deflections of substrate material and piezoelectric<br />

films of supporting beams observe linear elasticity and<br />

Hooke’s Law;<br />

(4) the piezoelectric material is anisotropic;<br />

(5) the supported beams are wide and flat, and thin beam<br />

theory (Euler-Bernoulli beam model) is applied; the<br />

stresses in the z-direction and the strains in the<br />

y-direction are negligible compared with others [7].<br />

Therefore,<br />

0543<br />

(1)<br />

0542<br />

The constitutive equation can be simplified as follows<br />

for an orthotropic piezoelectric thin film such as PZT:<br />

1<br />

p p<br />

CCC<br />

p<br />

1 3, 2, 1,<br />

0 1<br />

<br />

<br />

<br />

<br />

<br />

2 p,21<br />

p,22<br />

CCC<br />

p,23<br />

0 <br />

2 <br />

<br />

<br />

<br />

<br />

(2)<br />

<br />

3 p p<br />

CCC<br />

p<br />

3 3, 2, 1,<br />

0 3<br />

<br />

<br />

<br />

<br />

6 <br />

000<br />

C<br />

p 6 6,<br />

6<br />

<br />

From the stress/strain assumptions in (1) and the expression<br />

for σ 3 in (2), we obtain<br />

C<br />

3<br />

<br />

(3)<br />

C<br />

p 3 1,<br />

1<br />

p 3 3,<br />

Similarly, with the aid of (3), stress σ 1 can be represented as<br />

follows:<br />

<br />

<br />

<br />

CC <br />

<br />

(4)<br />

<br />

<br />

,13CC<br />

pp<br />

,31<br />

CE (5)<br />

,13 pp<br />

,31<br />

1<br />

C<br />

p 1 1,<br />

1<br />

EP<br />

<br />

1<br />

C <br />

p 3 3,<br />

pP 1 1,<br />

C<br />

p 3 3,<br />

where E p is the effective modulus of elasticity for the<br />

piezoelectric film.<br />

91

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