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As the metallization is too reflective for the wavelength of the used laser, and increased laser power could cause melting and wielding of the top and bottom layers, cold mechanical etching using a powder blaster was applied. Figure 7a shows a test sheet after performing both powder blasting steps using 9!m alumina powder, 50psi nitrogen pressure and a nozzle distance of 20mm. Worst-case alignment tests, as depicted in figure 7b, show that the self-aligning still works for misalignments higher than the maximum assumed. The mechanical structures and the use of sacrificial material have an impact to the lamination and cofiring settings. Applying high lamination pressure causes a higher risk of flexure and plane deformation. Information about delamination was obtained by laminating multiple samples with nano carbon sheet material (170!m) with reduced pressure and without an additional sacrificial LTCC frame. The specified for HL2000 is 10.3MPa (1500PSI) at 75ºC in an isostatic hot water press. The test has indicated 7MPa and 75ºC can be applied without effecting observable delamination. Adapting the cofiring temperature is necessary due to the evaporation and escaping of the nano carbon material from the laminated LTCC body [21]. As a large area of sacrificial material is enclosed with LTCC layers, a high slope of the temperature can affect layer deformation and cracking. The cofiring curve provided by the manufacturer recommends a linear start slope to 440ºC in 6 hours (1.2K/min). The profile has to be adapted the slope of 0.5K/min, as reported in [22]. The full manufacturing process steps and parameters required to build the functional layers of the prototype device will be presented at the conference. CONCLUSIONS The described design of an actuator for dynamic alignment purposes in six degrees of freedom is process compatible with the standard LTCC process technologies. Via drilling, via filling and track metallization printing can be performed with standard processes. Additional process steps have been used to the underside metallization of the top electrode layer, structuring of the mechanical features in the actuated layer, as well as for the gap filling with sacrificial material. The cofiring temperature curve has to be adapted. Further investigations are required to analyze the impact of layer deformations due to the double sided printing on the electrode gaps in the completed actuator package, as well as the heat transfer and thermal deformations in the beams caused by the driving currents. 11-13 May 2011, Aix-en-Provence, France REFERENCES [1] M. Luetzelschwab, D. Weiland, and M. P. Y. Desmulliez, “Adaptive Packaging Solution for a Microlens Array Placed Over a Micro-UV-LED Array”, Micro-Assembly Technologies and Applications, pp. 129-138, 2010. [2] H. Birol, T. Maeder, C. Jacq, S. Straessler, and P. Ryser, “Fabrication of low-temperature co-fired ceramics micro-fluidic devices using sacrificial carbon layers”, Int J Appl Ceram Tec, 2, pp. 364- 373, 2005. [3] D. Belavic et al., “PZT thick films for pressure sensors: Characterisation of materials and devices”, Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd, pp. 989 - 994, 2008. [4] H. Klumbies, U. Partsch, A. Goldberg, S. Gebhardt, U. Keitel, and H. Neubert, “Actuators to be integrated in Low Temperature Cofired Ceramics (LTCC) microfluidic systems”, Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on, pp. 1 - 4, 2009. [5] Y. Imanaka, “Multilayered low temperature cofired ceramics (LTCC) technology ”, Springer, ISBN: 0387231307, pp. 229, 2004. [6] Y. Lacrotte, F. Amalou, W. Yu, and M. P. Desmulliez, “Micro- Patterning of Green Tape Ceramic Using Powder-Blasting for LTCC Manufacturing”, IMAPS CICNT, Denver, pp. 1-8, 2009. [7] D. Andrijasevic, W. Smetana, J. Zehetner, and S. Zoppel, “Aspects of micro structuring low temperature co-fired ceramic (LTCC) for realisation complex 3D objects by embossing”, Microelectronic Engineering, 2007. [8] H.-J. Kim, Y.-J. Kim, and J.-R. Kim, “An Integrated LTCC Inductor Embedding NiZn Ferrite”, Magnetics, IEEE Transactions on, 42, pp. 2840 - 2842, 2006. [9] L. Lagorce, O. Brand, and M. Allen, “Magnetic microactuators based on polymer magnets”, IEEE Journal of Microelectromechanical Systems, 8, pp. 2-9, 1999. [10] B. Wagner, and W. Benecke, “Microfabricated actuator with moving permanent magnet”, Micro Electro Mechanical Systems, 1991, MEMS '91, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE, pp. 27 - 32, 1991. [11] R. Greenough, M. Schulze, A. Jenner, and A. Wilkinson, “Actuation with Terfenol-D”, Magnetics, IEEE Transactions on, 27, pp. 5346-5348, 1991. [12] C. Bolzmacher, K. Bauer, U. Schmid, M. Hafez, and H. Seidel, “Displacement amplification of piezoelectric microactuators with a micromachined leverage unit”, Sensors and Actuators A: Physical, 157, pp. 61-67, 2010. [13] E. Heinonen, J. Juuti, and H. Jantunen, “Characteristics of piezoelectric cantilevers embedded in LTCC”, Journal of the European Ceramic Society, 27, pp. 4135-4138, 2007. [14] L. Golonka et al., “Properties of PZT thick films made on LTCC”, Microelectronics International, 22, pp. 13-16, 2005. [15] R. Holzer, I. Shimoyama, and H. Miura, “Hybrid electrostatic/magnetic microactuators”, Robotics and Automation, 1995. Proceedings., 1995 IEEE International Conference on, 3, pp. 2941- 2946 vol. 3, 1995. [16] L. Ledernez, F. Olcaytug, H. Yasuda, and G. Urban, “A modification of Paschen law for Argon”, 29th ICPIG, July 12-17, 2009, Cancun, Mexico, Jun 12. [17] A. J. Wallash, and L. Levit, “Electrical breakdown and ESD phenomena for devices with nanometer-to-micron …”, Proceedings of SPIE, 2003. [18] M. J. Madou, “Fundamentals of microfabrication: the science of miniaturization ”, CRC Press, ISBN: 0-8493-0826-7, pp. 723, 2002. [19] D. A. Fleisch, “A student's guide to Maxwell's equations ”, Cambridge University Press, ISBN-13: 978-0-511-39308-2, pp. 134, 2008. [20] I. Szabó, “Höhere technische Mechanik”, Springer, ISBN: 3-540- 67653-8, pp. 546, 2000. [21] L. E. Khoong, Y. Tan, and Y. C. Lam, “Carbon burnout and densification of self-constrained LTCC for fabrication of …”, Journal of the European Ceramic Society, 2009. [22] A. C. Zatarain, “High-Quality CO(2) Laser Machining of LTCC Structures for Thermal Management of a Group of Single-Emitter Laser Diodes”, IMAPS Proceedings 2009. 115
11-13 May 2011, Aix-en-Provence, France Implementing MEMS resonators in 90 nm CMOS J. E. Ramstad, J. A. Michaelsen, O. Soeraasen, D. Wisland Department of Informatics, University of Oslo P.O. Box 1080 Blindern N-0316 Oslo, Norway In the ubiquitous information age of today there is an increased interest in combining actuating and sensing technology with the advanced signal processing of the well established CMOS technology. With that in mind, this work investigates the possibility of making MEMS resonators in finepitch CMOS in contrast to making MEMS in more coarsegrain CMOS processes. This is done by using the metal layers in the CMOS process both as structural layers and as a mask, using only a few post-CMOS etch steps. A modern and mature 90 nm CMOS process from ST Microelectronics is used and test structures are analyzed. A set of design rules have been derived and a general design guideline is described. As a practical example, implemented MEMS frequency tunable resonators are shown that are intended to be used as VCOs in an FDSM system to show the feasibility of the work. I. INTRODUCTION Wireless Sensor Network (WSN) nodes are wireless devices that monitor the environment and send information to other nodes through a transceiver. The sensor part and the transceiver part of such a node typically utilize large bulky off-chip components to perform these tasks. MEMS devices can replace some of these off-chip components and can be implemented directly on-chip by making MEMS out of the layers offered by the CMOS process (post-CMOS). This will allow a much more compact and more functional WSN node. There is a wide interest of integrating MEMS through post-CMOS processing for both sensing and transmitting applications. Examples of such sensor devices and transceiver components include: resonators [1], inductors [2], varactors [3], self-assembly devices [4], magnetometers [5], accelerometers [6], gyroscopes [7] and switches [8]. The common denominator of these examples are that these devices are implemented in more coarse-grain CMOS processes around the 0.35!m technology node. For WSN nodes it is desirable to make full on-chip systems with sensors, a transceiver and a signal processing unit with low power consumption and compact size. In this respect, investigating the possibility of making MEMS in fine pitch CMOS (90 nm CMOS or finer) is highly interesting. II. MEMS IN A 90 NM CMOS PROCESS A. CMOS-MEMS process features Our previous implementations of MEMS in CMOS [9,10] have been realized using a 0.25 !m CMOS process from ST Microelectronics (STM) where the dies have been postprocessed by Carnegie Mellon University (CMU) through the ASIMPS service from Circuits Multi-Projets (CMP). With the assistance from CMU, a chip in the STM 90 nm CMOS process has been post-processed which follows the Silicon substrate Metal layers 1 to 4 Metal layer 5 Metal layer 6 or 7; shielding layer Vias CMOS circuitry MEMS resonator structure (stack of metal-dielectric from M1 to M5) S Silicon substrate (a) (c) S Dielectric layers CMOS shielded by the top metal layer Remaining dielectric layers after the first etch step S Released MEMS resonator Resulting silicons profile after the third etch step Fig. 1. 90 nm CMOS-MEMS process etch steps same etch steps in order to make MEMS in CMOS as shown in fig. 1. The top metal layer is used as a mask to define the MEMS structures. The MEMS structure will contain a stack of metals and dielectrics that will define the structural thickness which in turn allows for electrostatic operation laterally above the wafer surface. As can be seen in fig. 1b) the dielectric layers are etched away, the silicon is anisotropically etched in c) and then finally released through an isotropic etch in d). In this configuration of the STM 90 nm CMOS process we used seven metal layers with an extra metal layer typically used for bonding only. Fig. 2 shows a cross-section of seven metal layers. As this is a Dual Damascene CMOS process, all metal layers consist of copper composites except the bond pad layer which consists of aluminum. The aspectratio attainable for etching narrow gaps are limited through the DRIE etch, so the focus is not to tune the process for small gaps, but instead use self-assembly (SA) structures to create narrow gaps as shown in section III. Metal 7 Metal 6 M1-M5 { Fig. 2. Overview over the metal layers of the process E2 S2 (b) (d) 116
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COLLECTION OF PAPERS PRESENTED AT T
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Table of Contents Wednesday 11 May
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PANEL DISCUSSION TEXTILE MICROSYSTE
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SPECIAL SESSION OF BIO-MEMS/NEMS a
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suspended membrane can be pulled to
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2) Cavity width effect To verify th
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Fig.9. Capacitive sensor output, Va
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! TABLE 3 SUMMARY OF SELECTIVITIES
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The fabrication of optical Cap-Wafe
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the glass is polished down in a cos
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Fig. 14. Time history of the envelo
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We have reported that how base mode
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l c 11-13 May 2011, Aix-en-Provence
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Vp (V) 3,5 3,0 2,5 2,0 1,5 1,0 0,5
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II. MATHEMATICAL MODEL AND NUMERICA
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fluids travel along a curved channe
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measured mixing indices are depicte
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length, which enables them to focus
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however, a rotation for coincidence
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excludes the nature of the fixed bo
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Using the radial and tangential mid
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Now the challenge in data handling
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value of every active channel. Ther
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electrocardiogram. • The heart be
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In our work, we proposed an innovat
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Fig. 8 Concept of the in-home perso
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found that the early-stage diagnosi
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Power monitoring data detected by w
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device consisted of a bimorph canti
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where C others is the capacitance o
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operation, the pressure inside the
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increased. 11-13 May 2011, Aix-en-
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coefficient compatible with the mic
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Variable Description Value Crab-leg
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Membrane weight (mg) Fig. 4. Struct
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So far, the expected major contribu
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al. used a modified LIGA (German ac
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REFERENCES [1] G. Mehta, J. Lee, W.
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followed by titanium (Ti) which sho
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exposure dose, post exposure bake t
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#### ##/&### 3 # #
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*5%6,+/.,-,7-, ,+.,1/21* %
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B. Energy Applications Society is f
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Presently, the microfabrication pro
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[6] C. Richard, A. Renaudin, V. Aim
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NA sinθ c 11-13 May 2011, Aix-en-
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the waveguide on the fused silica,
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microphone diaphragm. The chosen CM
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TABLE V MICROPHONE CHARACTERISTICS
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Figure 7b shows the effect of a par
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over the temperature range (i.e. th
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given. This allows a CTM model to b
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the magic-Tee, and the coherent sig
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After analyzing the two conditions
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IV. MICRO FABRICATION For fabricati
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IV. A. Simulation and Sensitivity A
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grown to sub-confluence were washed
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Clamps rotation [21] Clamps transla
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Layout Total dimensions of the grip
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focusing increased both as the stre
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Time of diffusion (hr) 1200 1000 80
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Chip Magnet Light source Hot plate
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above, they would move to upward an
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This phenomenon is now reaching the
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C. Proof mass displacement Moreover
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The VerilogA block code is : 11-13
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Author Index Abi-Saab D. 81 Aimez V
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Nussbaum Dominic 273 O’Hara T. 35
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