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! 11-13 May 2011, Aix-en-Provence, France 5700 Å. The etch rates were used as a reference for both the '!!!" standard process and the comparable processes developed later &#!!" for the ethanol catalyst. After each etching run, the oxide and &!!!" nitride chips were placed on a hot plate for 30 seconds at %#!!" 200! to remove any residue that can be formed on a silicon %!!!" $#!!" nitride surface during HF etching as described in [2]. A. PECVD Oxide and Nitride with Water Catalyst: At 25!, a low pressure of 8 Torr was used and for a high pressure process, 11T was satisfactory. This was the standard “base” recipe of 150 sccm aHF, with the remaining gas flow from the nitrogen buffer and catalyst flows dependant on the flow of the carrier gas. That is: 25 sccm and 175 sccm, 50 sccm and 150 sccm and 75 sccm and 125 sccm respectively for the carrier gas and nitrogen buffer gas flows. For etching at 10!, a low pressure of 3.5 Torr and a high pressure of 4.5 Torr were used. The gas flow of the carrier gas was again varied to study the behaviour of the catalysts. !"#$%&'()'*#+%,-.% $!!!" #!!" !" !" %!" '!" (!" )!" /'(()+(%0'1%2345% *+," -./001./" 2345/" *+,"-./01./" 647.45/" 849:" -./001./" 2345/" 849:" -./001./" 647.45/" Fig. 6. Showing the etch variance between a 2 minute and 3 minute etch of Silicon Oxide to Silicon Nitride in a 10! etch regime at high and low pressures as a function of water catalyst carrier gas flow. B. PECVD Oxide and Nitride with Ethanol Catalyst: A direct comparison of the etch of silicon nitride and oxide could be conducted using the same gas flows as the water catalyst tests. At 25!, a high pressure of 11 Torr was used and a low pressure of 8 Torr was used. At 10!, the high and low pressures were 4.5 Torr and 3.5 Torr respectively. !"#"$%&'()* '%" '$" '#" '!" &" %" $" #" !" !" #!" $!" %!" &!" +,--'"-*.,/*0#12*3/$$45* ()*" +,-../,-" 0123" +,-../,-" Fig. 3. Selectivity of Silicon Oxide to Silicon Nitride in a 25! etch regime at high and low pressures as a function of water catalyst carrier gas flow. !"#$%&'()'*#+%,-.% &!!!" %#!!" %!!!" $#!!" $!!!" #!!" !" !" %!" '!" (!" )!" /'(()+(%0'1%2345%,1##6.% *+," -./001./" 2345/" *+," -./001./" 647.45/" 849:" -./001./" 2345/" 849:" -./001./" 647.45/" Fig. 4. Showing the etch variance between a 2 minute and 3 minute etch of Silicon Oxide to Silicon Nitride in a 25! etch regime at high and low pressures as a function of water catalyst carrier gas flow. !"#"$%&'()* '#" '!" &#" &!" %#" %!" $#" $!" #" !" !" %!" '!" (!" )!" +,--'"-*.,/*0#12*3/$$45* *+," -./001./" 2345" -./001./" Fig. 5. Selectivity of Silicon Oxide to Silicon Nitride in a 10! etch regime at high and low pressures as a function of water catalyst carrier gas flow. !"#"$%&'()* "%$ &#$ &%$ #$ %$ !#$ %$ "%$ '%$ (%$ )%$ !&%$ !&#$ !"%$ !"#$ +,--'"-*.,/*0#12*3/$$45* *+,$ -./001./$ 2345$ -./001./$ Fig. 7. Selectivity of Silicon Oxide to Silicon Nitride in a 25! etch regime at high and low pressures as a function of ethanol catalyst carrier gas flow. !"#$%&'()'*#+%,-.% &"#$ &##$ %"#$ %##$ "#$ #$ #$ &#$ '#$ (#$ )#$ !"#$ /'(()+(%0'1%2345%,1##6.% *+,$ -./001./$ 2345/$ *+,$ -./001./$ 647.45/$ 849:$ -./001./$ 2345/$ 849:$ -./001./$ 647.45/$ Fig. 8. Showing the etch variance between a 2 minute and 3 minute etch of Silicon Oxide to Silicon Nitride in a 25! etch regime at high and low pressures as a function of ethanol catalyst carrier gas flow. !"#"$%&'()* &#$ "%$ "#$ %$ #$ #$ &#$ '#$ (#$ )#$ !%$ !"#$ +,--'"-*.,/*0#12*3/$$45* *+,$-./001./$ 2345$-./001./$ Fig. 9. Selectivity of Silicon Oxide to Silicon Nitride in a 10! etch regime at high and low pressures as a function of the catalyst carrier gas flow. 37
! !"#$%&'()'*#+%,-.% (##$ '#$ &#$ %#$ "#$ #$ !"#$ #$ "#$ %#$ &#$ '#$ /'(()+(%0'1%2345% )*+$ ,-.//0-.$ 1234.$ )*+$ ,-.//0-.$ 536-34.$ 7389$ ,-.//0-.$ 1234.$ 7389$ ,-.//0-.$ 536-34.$ Fig. 10. Showing the etch variance between a 2 minute and 3 minute etch of Silicon Oxide to Silicon Nitride in a 10! etch regime at high and low pressures as a function of the catalyst carrier gas flow. C. PECVD Oxide and Nitride with Ethanol Catalyst (Comparable Etch Rate Process Comparison): A discussed in section II, a process to produce a comparable etch rate to the water catalyst process was developed to analyse the effects of the selectivity for the ethanol catalyst process. This was carried out as there were no clear behaviour characteristics from the direct recipe comparison of ethanol from the previous section. For a low pressure regime, the criteria was that with the “base” recipe (150 sccm aHF, 150 sccm nitrogen buffer and 50 sccm catalyst carrier gas etched and etching time of 3 minutes), the total amount of etched oxide should equal in the region of 1800Å. For a high pressure regime, the total etched oxide for the process should equal approximately 5700Å. For the 25! process, a low pressure of 24 Torr was used and a high pressure of 35 Torr was required. At 10!, a low pressure of 12 Torr provided the right value for total etched oxide and at high pressure, a pressure of 28 Torr was used. !"#"$%&'()* '#" '!" &" %" $" #" !" !" #!" $!" %!" &!" +,--'"-*.,/*0#12*3/$$45* ()*" +,-../,-" 0123" +,-../,-" Fig. 11. Selectivity of Silicon Oxide to Silicon Nitride in a 25! etch regime at high and low pressures as a function of ethanol catalyst carrier gas flow. %#!!" 11-13 May 2011, Aix-en-Provence, France !"#"$%&'()* '#" '!" &" %" $" #" !" !" #!" $!" %!" &!" +,--'"-*.,/*0#12*3/$$45* ()*" +,-../,-" 0123" +,-../,-" Fig. 13. Selectivity of Silicon Oxide to Silicon Nitride in a 10! etch regime at high and low pressures as a function of ethanol catalyst carrier gas flow. !"#$%&'()'*#+%,-.% #!!!" '&!!" '%!!" '$!!" '#!!" '!!!" &!!" %!!" $!!" #!!" !" !" #!" $!" %!" &!" /'(()+(%0'1%2345%,1##6.% ()*" +,-../,-" 0123-" ()*" +,-../,-" 425,23-" 6278" +,-../,-" 0123-" 6278" +,-../,-" 425,23-" Fig. 14. Showing the etch variance between a 2 minute and 3 minute etch of Silicon Oxide to Silicon Nitride in a 10! etch regime at high and low pressures as a function of ethanol catalyst carrier gas flow. TABLE 1 SUMMARY OF SELECTIVITIES WITH DIRECT COMPARISON OF ETCH PROCESS Pressure/ Carrier Gas Flow Water, 25! Ethanol, 25! 8T/25sccm 2.8 2.2 8T/50sccm 7.1 2.5 8T/75sccm 5.6 2.2 11T/ 25sccm 11T/ 50sccm 11T/ 75sccm 12.5 1.5 13.9 -21.6 14 15.3 Pressure/ Carrier Gas Flow 3.5T/ 25sccm 3.5T/ 50sccm 3.5T/ 75sccm 4.5T/ 25sccm 4.5T/ 50sccm 4.5T/ 75sccm Water, 10! Ethanol, 10! 17.6 -8.8 17.4 6.1 21.5 3 33.9 5.6 37.8 -5 39.5 14 TABLE 2 SUMMARY OF SELECTIVITIES OF WATER CATALYST PROCESS AND COMPARABLE ETCH ETHANOL PROCESS AT 25! Pressure/ Carrier Gas Flow Water, 25! 8T/25sccm 2.8 8T/50sccm 7.1 Pressure/ Carrier Gas Flow 24T/ 25sccm 24T/ 50sccm Ethanol, 25! 10 6.1 !"#$%&'()'*#+%,-.% %!!!" $#!!" $!!!" #!!" !" !" %!" &!" '!" (!" /'(()+(%0'1%2345%,1##6.% )*+" ,-.//0-." 1234." )*+" ,-.//0-." 536-34." 7389" ,-.//0-." 1234." 7389" ,-.//0-." 536-34." Fig. 12. Showing the etch variance between a 2 minute and 3 minute etch of Silicon Oxide to Silicon Nitride in a 25! etch regime at high and low pressures as a function of ethanol catalyst carrier gas flow. 8T/75sccm 5.6 11T/ 25sccm 11T/ 50sccm 11T/ 75sccm 12.5 13.9 14 24T/ 75sccm 35T/ 25sccm 35T/ 50sccm 35T/ 75sccm 6.7 7.9 8 5.5 38
Page 2 and 3: COLLECTION OF PAPERS PRESENTED AT T
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Page 8 and 9: Table of Contents Wednesday 11 May
Page 10 and 11: PANEL DISCUSSION TEXTILE MICROSYSTE
Page 12 and 13: Friday 13 May SESSION C4: APPLICATI
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Page 24 and 25: suspended membrane can be pulled to
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Page 54 and 55: ! TABLE 3 SUMMARY OF SELECTIVITIES
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11-13 May 2011, Aix-en-Provence, F
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piezoelectric displacement transduc
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Figure 7 Displacement conditions of
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protect the corners from undercut.
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A. Continuous domain Starting from
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Fig. 8. Central finite difference m
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700 11-13 May 2011, Aix-en-Provenc
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o o o o o o o o Check applicability
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C. Identification Results The ident
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The proposed solution for this prob
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teen wire segments of a coil, as in
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As the metallization is too reflect
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B. Implemented die overview A die c
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IN CLK OUT Fig. 16. Probe setup for
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adhesive material with 30μm thickn
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B. Dynamics of Energy Flows For a l
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11-13 May, Aix-en-Provence, France
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80˚C. Additionally, we looked into
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The XRD shows a peak above the 2θ
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fibers which define the electric co
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Figure 15. Key board input system.
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ρ = h 2∆α∆T + + E 1h 3 1 +E 2
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In recent years, the pipe flow moni
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As the speed of the rotor increases
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inches silicon wafers which have th
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samples tested in different vacuum
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l c 11-13 May 2011, Aix-en-Provence
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Vp (V) 3,5 3,0 2,5 2,0 1,5 1,0 0,5
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II. MATHEMATICAL MODEL AND NUMERICA
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fluids travel along a curved channe
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measured mixing indices are depicte
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length, which enables them to focus
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however, a rotation for coincidence
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excludes the nature of the fixed bo
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Using the radial and tangential mid
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Now the challenge in data handling
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value of every active channel. Ther
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electrocardiogram. • The heart be
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In our work, we proposed an innovat
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Fig. 8 Concept of the in-home perso
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found that the early-stage diagnosi
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Power monitoring data detected by w
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device consisted of a bimorph canti
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where C others is the capacitance o
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operation, the pressure inside the
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increased. 11-13 May 2011, Aix-en-
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coefficient compatible with the mic
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Variable Description Value Crab-leg
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Membrane weight (mg) Fig. 4. Struct
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So far, the expected major contribu
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al. used a modified LIGA (German ac
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REFERENCES [1] G. Mehta, J. Lee, W.
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followed by titanium (Ti) which sho
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exposure dose, post exposure bake t
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#### ##/&### 3 # #
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*5%6,+/.,-,7-, ,+.,1/21* %
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B. Energy Applications Society is f
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Presently, the microfabrication pro
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[6] C. Richard, A. Renaudin, V. Aim
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NA sinθ c 11-13 May 2011, Aix-en-
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the waveguide on the fused silica,
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microphone diaphragm. The chosen CM
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TABLE V MICROPHONE CHARACTERISTICS
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Figure 7b shows the effect of a par
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over the temperature range (i.e. th
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given. This allows a CTM model to b
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the magic-Tee, and the coherent sig
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After analyzing the two conditions
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IV. MICRO FABRICATION For fabricati
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IV. A. Simulation and Sensitivity A
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grown to sub-confluence were washed
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Clamps rotation [21] Clamps transla
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Layout Total dimensions of the grip
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focusing increased both as the stre
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11-13 May, 2011, Aix-en-Provence,
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Time of diffusion (hr) 1200 1000 80
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Chip Magnet Light source Hot plate
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above, they would move to upward an
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This phenomenon is now reaching the
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C. Proof mass displacement Moreover
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The VerilogA block code is : 11-13
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Author Index Abi-Saab D. 81 Aimez V
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Nussbaum Dominic 273 O’Hara T. 35
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