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Online proceedings - EDA Publishing Association

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11-13 <br />

May 2011, Aix-en-Provence, France<br />

<br />

⎛ ⎞<br />

⎜ −=<br />

M<br />

out PP 2P<br />

⎛ 2P<br />

⎞<br />

characteristic frequencies ω M and ω long .<br />

in 1 ⎟ ;<br />

⎝ P<br />

⎜ −=<br />

M<br />

IL Log 11 ⎟<br />

The 0<br />

approximated value for the actuation voltage for a<br />

in ⎠<br />

⎝ Pin<br />

⎠ (7)<br />

central actuation is obtained by using the definition of the<br />

spring constant for the entire structure. The spring constant<br />

The approach for calculating the absorbed power by<br />

k is a measure of the potential energy of the bridge<br />

longitudinal modes is the same given in Eq. (5), thus leading<br />

accumulated as a consequence of its mechanical response to<br />

to:<br />

the electrical force due to the applied voltage V. An<br />

approximated definition of it for central actuation can be<br />

given by [8],[10]:<br />

1<br />

2<br />

Plong<br />

= ωlongCVRF<br />

(8)<br />

2<br />

3<br />

k k k =+=<br />

K 32 Ewr<br />

i.e. the capacitance will be affected by both longitudinal<br />

and transversal modes, and, by using the same formalism<br />

introduced in the previous equations, the full power<br />

transferred to the mechanical system by the RF signal<br />

passing through the line will be:<br />

2<br />

( ) CV<br />

' 1<br />

PM<br />

M ωω+= long RF<br />

(9)<br />

2<br />

The above equation is the measure of the total power<br />

transferred to the beam because of the RF signal to both<br />

longitudinal fundamental mode and transversal mode.<br />

Higher order longitudinal modes will absorb a power<br />

fraction scaled by the order of the excited mode, with lower<br />

amount of power for the highest modes.<br />

It is worth noting that in the spectrum reconstruction the<br />

above contributions have to be separated, leading to<br />

different values of the peak power. In particular, we should<br />

have the following distribution, which accounts also for the<br />

excitation of the two satellites:<br />

I<br />

I<br />

I<br />

out<br />

out<br />

out<br />

( ω )<br />

RF<br />

( )<br />

RF<br />

long<br />

( ωω ) ω CZ<br />

RF<br />

M<br />

in<br />

long<br />

that the frequency of resonance and the capacitance<br />

associated to the beam can be calibrated to fully absorb the<br />

RF signal. Such a result is particularly interesting for<br />

resonating structures based on double clamped<br />

configurations, because the maximum absorption<br />

corresponds to a resonance condition. Actually, such a<br />

device is a notch filter and it could be used as a feedback<br />

element in a one port oscillator. Another conclusion coming<br />

out from Eq. (10) is that the power released to the<br />

mechanical structure does not depend on the frequency of<br />

the carrier, but just on the geometry of the beam and its<br />

+ K<br />

2<br />

where:<br />

K<br />

1<br />

r =<br />

=<br />

t<br />

L<br />

E<br />

σ<br />

[ ( − ) wr ]<br />

1<br />

( )<br />

18 νσ<br />

1<br />

; K<br />

2<br />

⎛ L ⎞⎛<br />

L ⎞<br />

⎜ 22<br />

−− ⎟⎜<br />

⎟<br />

⎝ L ⎠⎝<br />

L ⎠<br />

1<br />

=<br />

Lc<br />

2 −<br />

L<br />

2<br />

cc<br />

(11)<br />

(12)<br />

L is the bridge total length, L c is the switch length in the<br />

RF contact region (width of the central conductor of the<br />

CPW), w is the bridge width, t is the Au thickness of the<br />

bridge. The other parameters are the Young modulus E, the<br />

residual stress σ and the Poisson coefficient ν. As well<br />

established, the Young modulus is an intrinsic property of<br />

the material, and specifically it is a measure of its stiffness.<br />

Let’ use, as an example, the following structure for a RF<br />

MEMS switch in coplanar waveguide (CPW) configuration:<br />

L=600 μm as the bridge total length, L<br />

2( M<br />

PP<br />

long<br />

)<br />

c =300 μm as the<br />

+<br />

1−=<br />

Z021<br />

(<br />

M<br />

+− ωω<br />

long<br />

) C<br />

switch length<br />

=<br />

in the RF contact region (width of the central<br />

P<br />

conductor of the CPW), w=100 μm as the bridge width,<br />

in<br />

w S =100 μm for the switch width (transversal dimension of<br />

PM<br />

ωωω<br />

M<br />

==±<br />

0 MCZ<br />

(10) the switch, parallel with respect to the CPW direction),<br />

Pin<br />

d=thickness of the dielectric material=0.2 μm, with<br />

dielectric constant ε=3.94 (SiO<br />

P<br />

2 ), t=1.5 μm for the gold<br />

long<br />

==± bridge, ρ=19320 kg/m 3 for the gold density, E=Young<br />

0 long<br />

P<br />

modulus=80×10 9 Pa, ν=0.42 for the metal Poisson<br />

coefficient and σ=18 MPa as the residual stress of the metal<br />

From the first of Eq. (10) it is worth noting that the (measured on specific micromechanical test structures). A<br />

intensity of the central peak could vanish under the uniform distribution of holes with 5 µm radius and distant<br />

condition 21 Z 0 ( ω ω ) C =+−<br />

0 . This is an evidence 10 µm each other has been also considered, leading to<br />

effective values in terms of the beam area and spring<br />

constant.<br />

A recent experimental approach was also adopted for<br />

evaluating the contribution of the spring constant and for<br />

modeling it on the base of nano-indentation techniques[9].<br />

All the quantities previously introduced have to be redefined<br />

because of the presence of holes in the released<br />

beam. The holes need to be used for an easier removal of<br />

the sacrificial layer under the beam, and for mitigating the<br />

stiffness of the gold metal bridge, i.e. for better controlling<br />

the applied voltage necessary for collapsing it, to have not<br />

values too high because of the residual stress.<br />

265

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