Online proceedings - EDA Publishing Association
Online proceedings - EDA Publishing Association
Online proceedings - EDA Publishing Association
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11-13 <br />
May 2011, Aix-en-Provence, France<br />
<br />
⎛ ⎞<br />
⎜ −=<br />
M<br />
out PP 2P<br />
⎛ 2P<br />
⎞<br />
characteristic frequencies ω M and ω long .<br />
in 1 ⎟ ;<br />
⎝ P<br />
⎜ −=<br />
M<br />
IL Log 11 ⎟<br />
The 0<br />
approximated value for the actuation voltage for a<br />
in ⎠<br />
⎝ Pin<br />
⎠ (7)<br />
central actuation is obtained by using the definition of the<br />
spring constant for the entire structure. The spring constant<br />
The approach for calculating the absorbed power by<br />
k is a measure of the potential energy of the bridge<br />
longitudinal modes is the same given in Eq. (5), thus leading<br />
accumulated as a consequence of its mechanical response to<br />
to:<br />
the electrical force due to the applied voltage V. An<br />
approximated definition of it for central actuation can be<br />
given by [8],[10]:<br />
1<br />
2<br />
Plong<br />
= ωlongCVRF<br />
(8)<br />
2<br />
3<br />
k k k =+=<br />
K 32 Ewr<br />
i.e. the capacitance will be affected by both longitudinal<br />
and transversal modes, and, by using the same formalism<br />
introduced in the previous equations, the full power<br />
transferred to the mechanical system by the RF signal<br />
passing through the line will be:<br />
2<br />
( ) CV<br />
' 1<br />
PM<br />
M ωω+= long RF<br />
(9)<br />
2<br />
The above equation is the measure of the total power<br />
transferred to the beam because of the RF signal to both<br />
longitudinal fundamental mode and transversal mode.<br />
Higher order longitudinal modes will absorb a power<br />
fraction scaled by the order of the excited mode, with lower<br />
amount of power for the highest modes.<br />
It is worth noting that in the spectrum reconstruction the<br />
above contributions have to be separated, leading to<br />
different values of the peak power. In particular, we should<br />
have the following distribution, which accounts also for the<br />
excitation of the two satellites:<br />
I<br />
I<br />
I<br />
out<br />
out<br />
out<br />
( ω )<br />
RF<br />
( )<br />
RF<br />
long<br />
( ωω ) ω CZ<br />
RF<br />
M<br />
in<br />
long<br />
that the frequency of resonance and the capacitance<br />
associated to the beam can be calibrated to fully absorb the<br />
RF signal. Such a result is particularly interesting for<br />
resonating structures based on double clamped<br />
configurations, because the maximum absorption<br />
corresponds to a resonance condition. Actually, such a<br />
device is a notch filter and it could be used as a feedback<br />
element in a one port oscillator. Another conclusion coming<br />
out from Eq. (10) is that the power released to the<br />
mechanical structure does not depend on the frequency of<br />
the carrier, but just on the geometry of the beam and its<br />
+ K<br />
2<br />
where:<br />
K<br />
1<br />
r =<br />
=<br />
t<br />
L<br />
E<br />
σ<br />
[ ( − ) wr ]<br />
1<br />
( )<br />
18 νσ<br />
1<br />
; K<br />
2<br />
⎛ L ⎞⎛<br />
L ⎞<br />
⎜ 22<br />
−− ⎟⎜<br />
⎟<br />
⎝ L ⎠⎝<br />
L ⎠<br />
1<br />
=<br />
Lc<br />
2 −<br />
L<br />
2<br />
cc<br />
(11)<br />
(12)<br />
L is the bridge total length, L c is the switch length in the<br />
RF contact region (width of the central conductor of the<br />
CPW), w is the bridge width, t is the Au thickness of the<br />
bridge. The other parameters are the Young modulus E, the<br />
residual stress σ and the Poisson coefficient ν. As well<br />
established, the Young modulus is an intrinsic property of<br />
the material, and specifically it is a measure of its stiffness.<br />
Let’ use, as an example, the following structure for a RF<br />
MEMS switch in coplanar waveguide (CPW) configuration:<br />
L=600 μm as the bridge total length, L<br />
2( M<br />
PP<br />
long<br />
)<br />
c =300 μm as the<br />
+<br />
1−=<br />
Z021<br />
(<br />
M<br />
+− ωω<br />
long<br />
) C<br />
switch length<br />
=<br />
in the RF contact region (width of the central<br />
P<br />
conductor of the CPW), w=100 μm as the bridge width,<br />
in<br />
w S =100 μm for the switch width (transversal dimension of<br />
PM<br />
ωωω<br />
M<br />
==±<br />
0 MCZ<br />
(10) the switch, parallel with respect to the CPW direction),<br />
Pin<br />
d=thickness of the dielectric material=0.2 μm, with<br />
dielectric constant ε=3.94 (SiO<br />
P<br />
2 ), t=1.5 μm for the gold<br />
long<br />
==± bridge, ρ=19320 kg/m 3 for the gold density, E=Young<br />
0 long<br />
P<br />
modulus=80×10 9 Pa, ν=0.42 for the metal Poisson<br />
coefficient and σ=18 MPa as the residual stress of the metal<br />
From the first of Eq. (10) it is worth noting that the (measured on specific micromechanical test structures). A<br />
intensity of the central peak could vanish under the uniform distribution of holes with 5 µm radius and distant<br />
condition 21 Z 0 ( ω ω ) C =+−<br />
0 . This is an evidence 10 µm each other has been also considered, leading to<br />
effective values in terms of the beam area and spring<br />
constant.<br />
A recent experimental approach was also adopted for<br />
evaluating the contribution of the spring constant and for<br />
modeling it on the base of nano-indentation techniques[9].<br />
All the quantities previously introduced have to be redefined<br />
because of the presence of holes in the released<br />
beam. The holes need to be used for an easier removal of<br />
the sacrificial layer under the beam, and for mitigating the<br />
stiffness of the gold metal bridge, i.e. for better controlling<br />
the applied voltage necessary for collapsing it, to have not<br />
values too high because of the residual stress.<br />
265