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where C others is the capacitance of the measurement system. C total is the total capacitance of the device and is expressed by Equation (16). Cind Ctotal = (16) n The capacitance of individual PZT plate C ind is given by S E Cind = εε (17) 0 hp 11-13 May 2011, Aix-en-Provence, France Fig. 12 shows a typical design of our MEMS DC sensor consisting of ten-PZT plates. Electrical connects in series by wire bonding for signal amplification will be operated. The square space Pt/Ti is the space for positioning the permanent magnet. The total output voltage V total in Fig. 12 generates 3.3 mV when the appliance cord is supplied by 0.04 A. On the other hand, the tensile stress acted in the substrate is calculated as around a critical value of 9 MPa if applied a current of 10 A. This fact implies that substrate materials should have a sufficient tensile yield stress higher than the above mentioned critical value. where ε and ε 0 are the vacuum dielectric constant (8.85× 10 -12 Fm -1 ) and relative dielectric constant (1000) of PZT thin films, respectively. S E is the area of the electrode and h p is the thickness of the PZT thin films. Therefore, in order to obtain a high V total in Equation (15), we need to decrease the capacitance C ind and increase PZT plates at the same time. We thus turn to calculate Q total , C total , V total to design the MEMS DC sensor by Equations (5)-(17). The size of cantilever is chosen as 4300 μm×4000 μm to withstand the magnetic force when a current of 10A is applied. The space between two PZT plates φ is 190 μm. The magnetic force is calculated under the current of 1A and the center of magnet is located at 3.8 mm from the center of the appliance cord. In this calculation, we ignore C others in Equation (15). Table 1 and Table 2 show values of h i , E i , z i for each layer of the MEMS DC sensor and values of w E , z N , Z p with respect to number of PZT plates, respectively. Fig. 9, Fig. 10, and Fig. 11 show the results of Q total , C total , and V total , respectively. It can be noted from Fig. 9 and Fig. 10, the more the PZT plates, the more decrease the values of Q total and C total . However, since the decrease of C total is greater than that of Q total , an increasing behavior can be observed for V total from Fig. 11. Therefore, we consider it would be effective to simultaneously increase number of PZT plates and decrease w E , φ by micromachining to achieve a high output voltage DC sensor. Fig. 9. Calculated Q total as a function of number of PZT plates. Table 1. Values of h i , E i , z i for each layer of the MEMS DC sensor. Fig. 10. Calculated C total as a function of number of PZT plates. i material h i (μm) E i (μm) z i (μm) top 5 top Pt/Ti 0.2 168 6.6 4 PZT 2 72.5 5.5 3 bottom Pt/Ti 0.2 168 4.4 2 thermal SiO 2 0.3 73.1 4.15 bottom 1 structure Si 4 190 2 Table 2. Values of w E , z N , Z p with respect to number of PZT plates. Number of PZT plates w E (μm) z n (μm) Z p (μm) 10 220 2.54 2.96 8 323 2.60 2.90 6 473 2.63 2.87 4 835 2.71 2.79 2 1860 2.76 2.74 1 3910 2.78 2.72 Fig. 11. Calculated C total as a function of number of PZT plates 235
11-13 May 2011, Aix-en-Provence, France Fig.12. A typical design of MEMS DC sensor consisted of ten beam-type PZT plate array for further verification. VI. MICROFABRICATION OF PROTOTYPE MEMS-SCALE DC SENSOR DEVICES As shown in Fig. 13, the prototype devices are fabricated from multilayer of Pt/Ti/PZT/Pt/Ti/SiO 2 deposited on silicon-on-insulator (SOI) wafers using a 5-mask micromachining process [8][9]. Deposition of the multilayer is started from thermal oxidation of SOI wafers followed by Pt/Ti bottom electrodes deposition. After (100)-oriented PZT thin film is deposited by a sol-gel process [10], Pt/Ti top electrodes are then sputtered. The etching process is as follows. Pt/Ti top electrodes are first etched by an Ar ion through mask No.1. PZT thin films are then wet-etched with an aqueous solution of HF, HNO 3 , and HCl through mask No.2. After Pt/Ti bottom electrodes are etched by an Ar ion through mask No.3, both the thermal SiO 2 , structural Si and buried oxide (BOX) are etched by RIE with CHF 3 gas (SiO 2 ) and SF 6 gas (Si) through (mask No.4). Finally, the substrate Si is etched from the backside to release the cantilever through mask No.5. Fig. 14 shows the fabricated MEMS DC sensor device. It can be noted that the cantilever are warped due to the BOX layer remained on the backside. Fig.13. Schematic diagram of the fabrication process chart. (a) Pt/Ti/PZT/Pt/Ti/SiO2 deposition, (b) Pt/Ti/PZT/Pt/Ti/SiO2 etching, (c) cantilever patterning, (d) substrate etching from backside to release cantilever. Fig. 14. The optical micrograph (Top view) of the fabricated MEMS DC sensor device. VII. CONCLUSIONS A non-drive, non-contact prototype MEMS-scale DC electric current sensor has been theoretically studied, geometrically designed and preliminarily fabricated for a measurement range of 0.04 A to 10 A. It would be effective to simultaneously increase number of PZT plates and narrow both electrode width and space between neighboring PZT plates by micromachining to achieve a high output voltage DC sensor. Based on a handmade macro-scale prototype DC sensor, we also succeeded in detecting out the impulsive values of the output voltage for a current range of 0.5 A to 3 A for the first time. ACKNOWLEDGEMENT Part of this work was supported by MEMS Inter University Network and performed in the Ubiquitous MEMS & Micro Engineering Research Center (UMEMSME) of National Institute of Advanced Industrial Science & Technology (AIST). REFERENCES [1]Y. Zhang, S.Uchiyama, D.K.Lee, H.Hiroshima, T.Itoh, R.Maeda International Workshop on Green Device and Micro Systems GDMS 2011(10pp) [2]E S Leland, P K Wrigth and R M White J.Microelectromech. Microeng. 19 (2009) 094018 (6pp) [3]M.V.Shutov, E.E. Sandoz, D.L.Howard, T.C. Hsia, R.L. Smith, S.D. Collins Sensors and Actuators A 121 (2005) 566-575 [4]H.H Yang, N.V.Myung, J.Yee, D.-Y. Park, B.-Y. Yoo, M. Schwartz, K. Nobe, J.W.Judy Sensors and Actuators A 97-98 (2002) 88-97 [5]Kohei Isagawa, Dong F.Wang, Takeshi Kobayashi, Toshihiro Itoh, Ryutaro Maeda JCK MEMS/NEMS 2010 (P-05) [6]Qiang Zou, Wei Tan, Eun Sok kim and Gerald E.Loed J.Microelectromech Syst., vol.17, no.1, pp45-57,Feb.2008 [7]T Kobayashi, H Okada, T Masuda and R Meada, T Itoh Smart mater. Struct.19(2010) 105030 (8pp) [8]M.S.Weinbeng, J.Microelectromech. Syst., vol.8, no.4, pp529-533,Dec.1999. [9]Kobayashi T, Ichiki M, Kondou R, Nakamura K and Maeda R 2007 j. Micromech. Microeng. 17 1238 [10]Kobayashi T, Ichiki M, Tsaur J and Maeda R 2005 Thin Solid Films 489 74 236
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COLLECTION OF PAPERS PRESENTED AT T
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III
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V
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Table of Contents Wednesday 11 May
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PANEL DISCUSSION TEXTILE MICROSYSTE
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Friday 13 May SESSION C4: APPLICATI
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SPECIAL SESSION OF BIO-MEMS/NEMS a
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suspended membrane can be pulled to
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most likely due to not yet consider
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that detectors may measure the diff
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2) Cavity width effect To verify th
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Fig.9. Capacitive sensor output, Va
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The anode and cathode are connected
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! TABLE 3 SUMMARY OF SELECTIVITIES
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The fabrication of optical Cap-Wafe
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the glass is polished down in a cos
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Fig. 14. Time history of the envelo
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Y X Fig. 1. Scanning electron mic
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10 3 11-13 May 2011, Aix-en-Proven
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Intenstiy (counts/second) Fig. 1. X
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etween x 2 to L (remember that x 2
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piezoelectric displacement transduc
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Figure 7 Displacement conditions of
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protect the corners from undercut.
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A. Continuous domain Starting from
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Fig. 8. Central finite difference m
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700 11-13 May 2011, Aix-en-Provenc
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o o o o o o o o Check applicability
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C. Identification Results The ident
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The proposed solution for this prob
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teen wire segments of a coil, as in
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As the metallization is too reflect
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B. Implemented die overview A die c
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IN CLK OUT Fig. 16. Probe setup for
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adhesive material with 30μm thickn
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B. Dynamics of Energy Flows For a l
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80˚C. Additionally, we looked into
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The XRD shows a peak above the 2θ
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fibers which define the electric co
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Figure 15. Key board input system.
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ρ = h 2∆α∆T + + E 1h 3 1 +E 2
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In recent years, the pipe flow moni
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As the speed of the rotor increases
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inches silicon wafers which have th
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samples tested in different vacuum
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l c 11-13 May 2011, Aix-en-Provence
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Vp (V) 3,5 3,0 2,5 2,0 1,5 1,0 0,5
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II. MATHEMATICAL MODEL AND NUMERICA
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fluids travel along a curved channe
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measured mixing indices are depicte
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length, which enables them to focus
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however, a rotation for coincidence
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Page 230 and 231: electrocardiogram. • The heart be
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#### ##/&### 3 # #
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*5%6,+/.,-,7-, ,+.,1/21* %
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B. Energy Applications Society is f
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Presently, the microfabrication pro
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[6] C. Richard, A. Renaudin, V. Aim
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NA sinθ c 11-13 May 2011, Aix-en-
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the waveguide on the fused silica,
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microphone diaphragm. The chosen CM
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TABLE V MICROPHONE CHARACTERISTICS
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Figure 7b shows the effect of a par
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over the temperature range (i.e. th
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given. This allows a CTM model to b
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the magic-Tee, and the coherent sig
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After analyzing the two conditions
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IV. MICRO FABRICATION For fabricati
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IV. A. Simulation and Sensitivity A
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grown to sub-confluence were washed
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Clamps rotation [21] Clamps transla
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Layout Total dimensions of the grip
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focusing increased both as the stre
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Time of diffusion (hr) 1200 1000 80
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Chip Magnet Light source Hot plate
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This phenomenon is now reaching the
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C. Proof mass displacement Moreover
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The VerilogA block code is : 11-13
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Author Index Abi-Saab D. 81 Aimez V
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Nussbaum Dominic 273 O’Hara T. 35
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