Online proceedings - EDA Publishing Association

(a)
PSD of the input signal.
11-13
May 2011, Aix-en-Provence, France
Anis Nurashikin Nordin received the B. Eng. Degree in Computer and
Information Engineering from the International Islamic University Malaysia
(IIUM), Kuala Lumpur, Malaysia in 1999, and the M.S degree in Computer
Engineering from the George Washington University (GWU), Washington
DC, in 2002, and the D. Sc. Degree in Electrical and Computer Engineering
at GWU. Currently, she is a lecturer at International Islamic University
Malaysia (IIUM).Her main research interests are VLSI.
Sheroz Khan is currently working as a faculty member within the
Department of Electrical and Computer Engineering, here at the
International Islamic University Malaysia since January 2002. At the
moment he is leading a research group, called Wireless Communication and
Signal Processing where a group of over twenty research students working
for their M Sc/Ph Ds under the supervision of qualified colleagues as faculty
members. Sheroz Khan's areas of interest include sensors and transducer
interfacing, electronic instrumentation, embedded systems. He has worked
on UWB signals generation, shaping and modulation. Also, his interests
include those for biomedical medical electronic application, including areas
such energy scavenging and devices such as smart and intelligent
transducers designed and developed for contactless data acquisition from
inaccessible points.
ACKNOWLEDGMENT
This work is supported by International Islamic University
Malaysia’s Endowment Fund (EDW B 0905-304).
(b)
PSD of the output signal.
Fig.11. The power spectral density of input and output signals.
V. CONCLUSION
This paper presents a design, simulation and analysis of an
Σ-∆ interface circuit for a CMOS-MEMS differential
capacitive sensor. The results demonstrate that the usage of
an Σ-∆ modulator allows very weak analog signals to be
converted to an extremely high resolution digital output. The
usage of Silterra 0.13μm CMOS process allows the on-chip
area to be kept to a minimum. This Σ-∆ modulator has an
input signal frequency of 500 Hz, oversampling frequency of
160 kHz, oversampling ratio (OSR) of 160; and
signal-to-noise ratio of 62.98 dB.
REFERENCES
[1] Karianne Qysted and Dag T. Wisland, University of Olso, Dep. of
Informations, Norway, “Piezoresistive CMOS-MEMS Pressure
Sensor with Ring Oscillator Readout Including Δ-Σ
Analog-to-Digital Converter On-chip”, IEEE Custom Integrated
Circuits Conference, 2005.
[2] Babak Vakili Amini, Student Member, IEEE, and Farrokh Ayazi,
Member, IEEE, “A 2.5-V 14-bit ΣΔ CMOS SOI Capacitive
Accelerometer”, IEEE Journal of Solid-state Circuits, Vol. 39, No.
12, December 2004.
[3] A. N. Nordin and M. Zaghloul, “CMOS design and implementation
of sigma-delta analog-to-digital data converter suitable for MEMS
devices”, 2003.
[4] Bernhard E. Boser, “Surface Micromachining An IC-Compatible
Sensor Technology”, Berkeley Sensor & Actuator Center Dept. of
Electrical Engineering and Computer Sciences University of
California, Berkeley.
[5] Shlomo Engelberg, “Instrumentationnotes: Sigma-Delta
Converters: Theory and Simulations,” IEEE Instrumentation &
Measurement Magazine, pp. 49-53, December 2007.
[6] E. Dallago, P. Malcovati, D. Miatton, T. Ungaretti, and G. Venchi,
“Analysis of sigma-delta converter for MEMS sensors using power
supply voltage as reference”, Circuits, Devices and Systems, IEE
Proceedings -, vol. 153, pp. 473-479, 2006.
[7] R. Jacob Baker, “CMOS Mixed-Signal Circuit Design”, second
edition, IEEE Press, 2009, New York.
VI. BRIEF BIOGRAPHY OF THE AUTHOR
Ma Li Ya received the B. Eng Electronic and Information Engineering
from Changchun University, Jilin Province, China in 2007 and currently
working toward Master Degree in Electronic Engineering. Her main
research interests are Mix-signal Integrated Circuit Design and MEMS. She
currently involves in the design and simulation of analog-to-digital
converter for low-frequency MEMS sensor applications.
22