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Online proceedings - EDA Publishing Association

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The transmittance of the filter deposited onto a BDJ<br />

detector can be obtained by calculating the logarithmic ratio<br />

of the measured photocurrents before and after filter<br />

deposition (Fig. 6). We validated this measurement method<br />

by comparing results from an on-chip integrated<br />

interference filter with another filter deposited on a<br />

reference glass substrate (Eagle XG) in the same fabrication<br />

process. The measured attenuation of the interference filters<br />

was -12.0 dB and -12.6 dB, respectively. The transmittance<br />

was evaluated by monitoring the photocurrents from the two<br />

photodiodes.<br />

The transmittance of the hybrid filter compared to a<br />

reference glass substrate shows a potential of total rejection<br />

near 50 dB from 532 nm (reject band) to 650 nm (passband).<br />

However, measurements for the same filter<br />

deposited on the detector were close to the noise floor of<br />

our SMU (HP4142B, Agilent, USA). For this reason, the<br />

photocurrent at 532 nm (illumination with a frequencydoubled<br />

YAG laser) was obtained using the on-chip<br />

integrated charge amplifier coupled with the integration<br />

time method [12].<br />

The attenuation of the hybrid filter deposited on a BDJ<br />

detector was evaluated to be -60 dB at 532 nm, compared to<br />

-50 dB for the reference case with filter deposition on a<br />

glass substrate. The difference between the two cases may<br />

be due to a mismatch of deposited absorbing filter<br />

thickness. In the packaged die, the thickness is probably<br />

greater larger than that of the reference due to the non-ideal<br />

spin-coating and the presence of more pronounced edgebead.<br />

The main characteristics of the BQJ detector and the<br />

on-chip integrated filters are summarized in Table I.<br />

IV. CONCLUSION<br />

We have proposed a hybrid interference-absorbing filter<br />

with optimized performance (for normal incidence and offaxis<br />

illumination) for fluorescence detection requiring high<br />

excitation rejection and minimal autofluorescence. The<br />

rejection reaches -60 dB between 532nm to 650nm.<br />

Fig. 6 Attenuation of the interference filter over the BDJ photodetector<br />

11-13 <br />

May 2011, Aix-en-Provence, France<br />

<br />

Photodetector<br />

Interference<br />

filter<br />

Absorbing filter<br />

Hybrid filter<br />

TABLE I<br />

MAIN RESULTS<br />

0.8μm Multi-HighVoltage CMOS/DMOS DALSA<br />

Type : Buried Quad pn-Junction (BQJ)<br />

Active area: 200 x 200 µm² (shallow-junction)<br />

Total area: 420 x 420 µm 2<br />

Dark currents @ room temperature<br />

I 1=1.04 pA, I 2=0.86 pA, I 3=2.22 pA, I 4=9.29 pA<br />

9 thin-film layers (TiO 2/SiO 2)<br />

Thickness: ~ 1.2 µm<br />

Manufacturing process : E-Beam evaporation<br />

-12.6 dB @ 532 nm (stop-band)<br />

-0.76 dB @ 650 nm (pass-band)<br />

Manufacturing process : RF sputtering<br />

-16.6 dB @ 532 nm (stop-band)<br />

-0.5 dB @ 650 nm (pass-band)<br />

KMPR photoresist + Orasol Red<br />

Thickness: ~ 1.6 µm<br />

Manufacturing process : spin-coating<br />

-32.6 dB @ 532 nm (stop-band)<br />

-1.28 dB @ 650 nm (pass-band)<br />

Rejection between the excitation and the emission<br />

bands:<br />

43 dB for E-Beam evaporation process<br />

47 dB for RF sputtering process<br />

The developed fabrication process is compatible with<br />

CMOS integration. Its on-chip integration with a CMOS<br />

BQJ detector allows determination of multi-labeling<br />

spectral contributions (up to 4 tags).<br />

ACKNOWLEDGMENTS<br />

This work was supported in part by grants from the<br />

Natural Sciences and Engineering Research Council of<br />

Canada (NSERC), Nano-Québec, and Teledyne-DALSA.<br />

The collaborative work was supported by the Laboratoire<br />

International Associé en Nanotechnologies et Nanosystèmes<br />

(LIA-LN2).<br />

REFERENCES<br />

[1] M. Dandin, P. Abshire, and E. Smela, "Optical filtering<br />

technologies for integrated fluorescence sensors," Lab on a Chip,<br />

vol. 7, pp. 955-77, 2007/08/ 2007.<br />

[2] G. T. Roman and R. T. Kennedy, "Fully integrated microfluidic<br />

separations systems for biochemical analysis," Journal of<br />

Chromatography A, vol. 1168, pp. 170-188, Oct 19 2007.<br />

[3] R. Bashir, "BioMEMS: State-of-the-art in detection, opportunities<br />

and prospects," Advanced Drug Delivery Reviews, vol. 56, pp.<br />

1565-1586, 2004.<br />

[4] P. Pittet, J. M. Galvan, G. N. Lu, L. J. Blum, and B. D. Leca-<br />

Bouvier, "CMOS LIF detection system for capillary analysis,"<br />

Sensors and Actuators B (Chemical), vol. B97, pp. 355-61, 2004.<br />

[5] K.-S. Shin, Y.-H. Kim, J.-A. Min, S.-M. Kwak, S. K. Kim, E. G.<br />

Yang, J.-H. Park, B.-K. Ju, T.-S. Kim, and J. Y. Kang,<br />

"Miniaturized fluorescence detection chip for capillary<br />

electrophoresis immunoassay of agricultural herbicide atrazine,"<br />

Instrumental Methods of Analysis - IMA 2005, Analytica Chimica<br />

Acta, vol. 573-574, pp. 164-171, 2006.<br />

303

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