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TABLE V<br />
MICROPHONE CHARACTERISTICS<br />
Characteristics Value<br />
Resonant frequency 10 kHz<br />
Open circuit sensitivity -35 dB.V/Pa<br />
SNR<br />
68 dB<br />
Fig. 9. Simulated spectral density of the output noise voltage.<br />
IV. MICROPHONE FABRICATION<br />
The fabrication of the microphone is based on the AMS<br />
0.35 µm CMOS back-end process that encompass a<br />
passivation layer, four metal layers, three via layers and<br />
several silicon dioxide layers. The metal layers used for the<br />
microphone is M4 for the diaphragm and M2 for the fixed<br />
electrode. The silicon dioxide layer between M4 and M2 is a<br />
sacrificial layer which is removed by HF vapor etching.<br />
Fig. 10 shows the microphone before etching.<br />
Fig. 10. Microphone fabricated with the AMS 0.35 µm CMOS process<br />
before etching.<br />
V. CONCLUSIONS<br />
In this paper, we have proposed a simple model of a MEMS<br />
capacitive microphone to estimate its characteristics for audio<br />
applications. This lumped-parameters reduced model can still<br />
be improved, but it is useful for initial estimations.<br />
The structure of the microphone has been fabricated with a<br />
standard CMOS process (AMS 0.35 µm). A sacrificial etch of<br />
the silicon dioxide layers will be done in the near future to<br />
obtain the working microphone. If successful, it will be<br />
possible to integrate on the same chip the MEMS capacitive<br />
microphone and the electronic circuit.<br />
11-13 <br />
May 2011, Aix-en-Provence, France<br />
<br />
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©<strong>EDA</strong> <strong>Publishing</strong>/DTIP 2011<br />
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314<br />
ISBN:978-2-35500-013-3