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11-13 <br />

May 2011, Aix-en-Provence, France<br />

<br />

Reduced Order Modelling of MEMS Dynamics<br />

Stefano Mariani 1 , Saeed Eftekhar Azam 1 , Aldo Ghisi 1 , Alberto Corigliano 1 , Barbara Simoni 2<br />

1 Politecnico di Milano, Dipartimento di Ingegneria Strutturale<br />

Piazza Leonardo da Vinci 32, 20133 - Milano (ITALY)<br />

2<br />

STMicroelectronics, MSH Division<br />

Via Tolomeo 1, 20010 Cornaredo (ITALY)<br />

Abstract- The dynamics of a uniaxial micro-accelerometer<br />

subjected to accidental drop events is studied by means of a<br />

reduced order model. A two degrees of freedom model is built,<br />

which carefully reproduces the MEMS response under high<br />

acceleration events. The results of the reduced order model are<br />

compared to those obtained with a three-dimensional finite<br />

element model, in terms of accuracy of the results and<br />

simulation speed-up<br />

I. INTRODUCTION<br />

During accidental drop events, polysilicon MEMS<br />

sensors are often exposed to high-g loadings because of<br />

their extremely small mass and, therefore, inertia [1-3].<br />

This fact can cause mechanical failure due to cracking in<br />

high stressed regions. In a series of papers [4-8] we<br />

recently proposed a numerical approach to accurately link<br />

the features of the shock-inducing cause (like, e.g. a drop)<br />

to the effects at the MEMS level. Because of the several<br />

length-scales affecting the dynamics of the whole device<br />

when subjected to such shocks, a multi-scale frame was<br />

adopted. We then showed that macro-scale (at device level)<br />

and meso-scale (at sensor level) analyses can be routinely<br />

investigated making use of commercial finite element<br />

codes, since the features of the polycrystalline film<br />

constituting the movable parts of the MEMS have a<br />

marginal impact. A different situation characterizes microscale<br />

(at polysilicon film level) analyses, which turn out to<br />

be extremely complicated and time demanding, in case high<br />

accuracy of the results is mandatory.<br />

A possible way to drastically reduce the computing time<br />

is to make use of reduced order models for the whole<br />

MEMS sensor, built in an accurate and micro-mechanically<br />

informed way. Reduced models would allow to avoid<br />

running analyses at the micro-scale, keeping a similar<br />

accuracy in the results. This issue was partially addressed<br />

in previous works [9-10].<br />

In the present work we go further on in the use of reduced<br />

models built on the basis of purely mechanical<br />

considerations, routed by the investigated details of the<br />

MEMS dynamics. A simple two degrees of freedom<br />

reduced model is built for a commercial micro<br />

accelerometer (Fig. 1) which measures the acceleration<br />

orthogonal to the device substrate. The dynamics of<br />

accidental drop events characterized by two acceleration<br />

levels, is numerically studied by means of the reduce model<br />

and compared with the outcome of a fully 3D finite element<br />

model.<br />

More sophisticated reduced order modelling techniques<br />

could be used, e.g. based on the proper orthogonal<br />

decomposition (POD) [11] and compared with the approach<br />

presented in this paper; this issue will be the subject of<br />

forthcoming works.<br />

II. MODELLING IMPACTS IN MEMS ACCELEROMETERS<br />

The accelerometer was assumed to be subjected to a low-g<br />

acceleration input directed along the Z-axis (see Fig. 2),<br />

whose maximum is about 90 g, and to a high-g input (see<br />

Fig. 3), with a maximum acceleration peak of about 5,500 g.<br />

As for the boundary conditions applied to the model, the<br />

accelerometer is anchored at its center with two slender<br />

suspension springs. As a reference solution a finite element<br />

model of the accelerometer, featuring 34,000 nodes and<br />

26,000 elements, i.e. about 100,000 degrees of freedom (dof)<br />

has been considered. In parallel, a reduced, two-dof model<br />

has been envisaged: if we impose a rigid behavior for the<br />

plate, only dof reproducing the vibration modes #1 and #5<br />

from Fig. 6 need to be considered. The spectral content of<br />

the two input accelerations, as shown in Fig. 4-5 through<br />

their energy spectral density, confirms that the relevant,<br />

excited dynamics pertains the relative rotation of the plate<br />

−=Δ<br />

θθθ<br />

and its relative translation −=Δ<br />

www<br />

at the<br />

spring clamped end, as shown in Fig. 1.<br />

The motion of the device in this two-dof framework can<br />

be described as follows:<br />

− aMuKu<br />

=++ (1)<br />

where the vector u=[Δw Δθ ] T collects the two dof,<br />

superposed dots indicate time derivative. If we assume h to be<br />

the plate thickness, L the plate length in the x direction, ρ the<br />

polysilicon mass density (reduced to take into account for the<br />

holed plate), l the spring length, and V the plate volume, then<br />

the mass matrix collects the plate translational mass<br />

53

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