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etude theorique et experimentale du transport electronique ... - Ief

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Chapitre III : Etude expérimentale des eff<strong>et</strong>s non stationnaires[16] “Potential Design and Transport Property of 0.1microm<strong>et</strong>re MOSFET with Asym<strong>et</strong>ric ChannelProfile”, Odanaka and Hiroki, IEEE, Transaction on electron Device, Vol 44, n°4, April 1997.[17] “Symm<strong>et</strong>ric Source/Drain Extension Transistor Structure for High Performance sub-50nm GateLength CMOS Devices”, 2001 Symposium VLSI Tech Digest of Technical Papers.[18] “Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors”, J.H. Rhew,Ph.D.thesis,2003.Disponible sur http://falcon.ecn.pur<strong>du</strong>e.e<strong>du</strong>:8080/publications/PhD_thesis_JHR_2003.[19] “Efficient Monte Carlo Device Modeling”, Bufler, IEEE transactions on Electron Device, vol. 47,n°10, 2000.[20] “Characterization of the hot electron distribution function using six moments”, T. Grasser, H.Gosina, C. Heitzinger and S. Selberherr, Journal of Applied Physics, vol. 91, n°6, 2002, pp: 3869-3879.[21] “Non parabolic hydrodynamic formulations for the simulation of inhomogeneous semicon<strong>du</strong>ctordevices”, A.W. Smith and K.F. Brennan, Solid-State Electron., vol.39, n°11, 1996, pp: 1659-1668.[22] “Using six moments of Boltzmann’s <strong>transport</strong> equation for device simulation”, T. Grasser, H.Gosina, C. Heitzinger and S. Selberherr, Journal of Applied Physics, vol. 90,n°5, 2001, pp: 2389-2396[23] “Temperature Dependent Channel Backscattering Coefficients in Nanoscale MOSFETs”, M. Chen,IEDM 2002, pp: 39-42.[24] “MOSFET electron inversion layer mobilities-a physically based semi-empirical model for a wid<strong>et</strong>emperature range”, Jeon, D.S.; Burk, D.E.; IEEE TED, vol 36, Issue 8, Aug. 1989 pp: 1456 – 1463.[25] “Thermal effects in n-channel enhancement MOSFET's operated at cryogenic temperatures” Foty,D.P.; Titcomb, S.L.; IEEE TED, vol. 34, issue 1, 1987, pp:107-113.[26] “Phenomenological physics of hot carriers in semicon<strong>du</strong>ctor”. In physics of Nonlinear Transport inSemicon<strong>du</strong>ctors”. Hess, K. Edited by D.K. Ferry, J. Backer and C. Jacoboni, Peplum, New York,1980.[27] “A Review of Hydrodynamic and Energy–Transport Models for Semicon<strong>du</strong>ctor DeviceSimulation”, T. Grasser, T.W. Tang, H. Kosina, S. Selberherr, Proceeding of IEEE, vol. 91, 2003,pp: 251-273.[28] “Semicon<strong>du</strong>ctor Transport”, D.K. Ferry, New York: Taylor and Francis, 2000.- 130 -

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