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Chapitre II : Les différents niveaux de la modélisation[77] “A Compact Double Gate MOSFET Model Comprising Quantum Mechanical and NonstaticEffects”, G. Baccarani, S. Reggiani, IEEE Trans. Elec. Devices, vol. 46, no 8, 1999, pp: 1656-1666.[78] “An energy Balance equation Based 0.1mm MOSFET Model Including Velocity OvershootBehavior”, J.H. Sim, IEEE Trans. Electron Devices, 1995, pp: 214-217.[79] “An analytical Deep Submicron MOS Device Model Considering Velocity Overshoot BehaviorUsing Energy Balance Equation”, J.H. Sim, IEEE Trans. Electron Devices, vol. 42, n°5, 1995, pp:864-869.[80] “Modeling Effects of Electron Velocity Overshoot in a MOSFET”, J.B.Roldan, F. Gamiz,J.A.Lopez Villanueva and J.E. Carceller, IEEE Trans. Electron Devices, vol. 44, n°5, 1997.[81] “A model for the drain Current of Deep Submicrometer MOSFET’s including Electron VelocityOvershoot”, J.B.Roldan, F. Gamiz, J.A.Lopez Villanueva, P. Cartujo and J.E. Carceller, IEEETrans. Electron Devices, vol. 45, n°10, 1998.[82] “An analytical Formulation of the Length Coefficient for the Augmented Drift Diffusion ModelIncluding Velocity Overshoot”, D. Chen, E. C. Kan and U. Ravailoi, IEEE Trans Elec. Dev., vol.38, n°6, 1991, pp: 1484-1490.[83] “A physical Model including Velocity overshoot for Drain Current of sub-0.15mm MOSFETs”,K.D. Vivek, B. Agrawal and J.D. Meindl, IEEE Trans. Electron Devices, 1993, pp:717-720.[84] “Electronic properties of two dimensional systems”, T. Ando, A. Fowler and F. Stern, Review ofmodern Physics, vol.54, n°2, 1982. pp: 437-672.[85] “Nanoscale field effect transistors : An ultimate size analysis », F.G. Pikus and K.K. Likarev, Appl.Phys. Lett., vol. 71, n° 25, 1997, pp: 3661-3663.[86] “Ballistic MOSFET Reproduces Current-Voltage Characteristics of an Experimental Device”, K.Natori, IEEE Elec. Dev. Letters, vol. 23, 2002, pp: 655-657.[87] “Unified compact model for the ballistic quantum wire and quantum well metal-oxidesemiconductorfield effect transistor”, D. Jimenez, J.J. Saenz, B. Iniquez, J. Sune, L.F. Marsal andP. Pallares, Journal of Appl. Phys., vol. 94, n°2, 2003, pp:1061-1068.[88] “Role of Quantization effects in the operation of ultrasmall MOSFETs and SOI device structures”,D. Vasileska, R. Akis, I. Knezevic, S. N. Milicic, S. S. Ahmed, D. K. Ferry, MicroelectronicEngineering, vol. 63, 2002, pp: 233-240.[89] “Shrinking limits of silicon MOSFETs: numerical study of 10nm scale devices”, Y. Naveh, K.K.Likharev, Superlattices and Microstructures, vol. 27, n°3 , 2000, pp: 112-122.[90] “Modeling of 10nm scale ballistic MOSFET’s”, Y. Naveh and K.K. Likhrev, Submitted to IEEEElectron Dev. Lett.[91] Nanoscale Silicon MOSFETs: A theoretical Study”, V.A. Sverdlov,T. J. Walls and K.K. Likarev,IEEE Trans. Electron Devices, vol. 50, n° 9, 2003, pp: 1926-1933[92] “Does source to drain tunnelling limit the ultimate scaling of MOSFETs?” J. Wang and M.Lundstrom, IEDM 2002 San Fransisco, 2002, pp. 707-710,[93] “Theory of Ballistic Nanotransistors”, IEEE Trans. Electron Devices, A. Rahman, J. Guo, S. Datta,M. S. Lundstrom, vol.50, n°9, 2003, pp: 153-1864.[94] “On the Performance Limits for Silicon Mosfets: A Theoretical Study” Farzin Assad, Zhibin Ren,Dragica Vasileska, Supriyo Datta, and Mark Lundstrom, IEEE Trans. Electron Devices, Vol. 47,2000, pp: 232-240- 80 -
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REMERCIEMENTSCette étude a été m
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Tables des matièresTABLE DES MATIE
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Tables des matières6.1. Comparaiso
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IntroductionINTRODUCTIONCONTEXTE ET
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IntroductionREFERENCES[1] “Crammi
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Chapitre I : Introduction au transp
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Chapitre IV : Modélisation analyti
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ConclusionCONCLUSIONLE TRAVAIL EFFE
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ConclusionFigure C: Interface MASTA
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