etude theorique et experimentale du transport electronique ... - Ief

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Chapitre I : Introduction au transport électronique[5] “Electron mobility in extremely thin single gate silicon on insulator inversion layer”, F.Gamiz, J. B. Roldan, P. Cartujo-Casseniello, J. E. Carceller, J.A. Lopez-Villanueva and S.Rodriguez, Journal of Applied Physics, vol. 86, n°11, 1999, pp: 6269-6275.[6] “A novel Local Strain Scheme with Strong 45nm CMOS Performance for BroadApplications”, C.T. Huang and al, IEDM 2004.[7] “Physique des semiconducteurs et des composants électronique”, 5 ème édition, H. Mathieu,Edition Dunot, 2001.[8] “On the universality of the inversion layer mobility in Si MOSFET’s : Part I- Effects ofsubstrate impurity concentration”, S. Takagi, A. Toriumi, M. Iwase, H. Tango, IEEE Trans.Electron Dev., vol. 41, 1994, pp: 2357-2362.[9] “A review of Some Charge Transport Properties of silicon”, C. Jacoboni, C. Canali, G.Ottavaniani and A. Quaranta, Solid-State Electronics, vol. 20, 1977, pp: 77-89.[10] “Fundamental of carrier transport”, M.S. Lundstrom, Cambridge University Press, 2001[11] Li, S. S. and W. R. Thurber, Solid State Electron. 20, 7 (1977), pp: 609-616.[12] Jacoboni, C., C. Canali, G. Ottaviani, and A. A. Quaranta, Solid State Electron. 20, 2(1977)77-89[13] “Semiconductor Transport”, D.K. Ferry, New York: Taylor and Francis, 2000.[14] “Semiconductor Physics, an introduction” K. Seeger, Springer Serie, Solids State Sciences n°40, 1982.[15] K. Hess and K. Seeger, Z. Physik, vol. 218, 1968, pp: 431[16] “G. Baccarani, C. Jacoboni and M. Mazzone, Solid-State Electron., vol. 20, 5, 1977.[17] “Ballistic Transport in Silicon MOSFET’s”, L. Chang, Physics 250 Term Paper, 2000.[18] “Ballistic metal oxide semiconductor field effect transistor”, K. Natori, J. App. Phys., vol. 76,n°8, 1994, pp: 4879- 4890.[19] “Ballistic MOSFET Reproduces Current-Voltage Characteristics of an Experimental Device”,K. Natori, IEEE Elec. Dev. Letters, vol. 23, 2002, pp: 655-657.[20] “A Landauer Approach to Nanoscale MOSFETs”, M.S. Lundstrom, Journal of ComputationalElectronics, vol. 1, 2002, pp: 481-489.[21] “Temperature Dependent Channel Backscattering Coefficients in Nanoscale MOSFETs”, M.Chen et al, Electron Devices Meeting, IEDM 2002. Digest. International, pp: 39-42.[22] “On the ballistic transport in nanometer-scaled DG MOSFETs”, J. Martin, A. Bournel, P.Dollfus, Electron Devices, IEEE Trans. Electron Devices, vol. 51, Issue: 7, 2004, pp: 1148-1155.[23] “Physique de l’état solide”, C. Kittel, Edition dunot, 1998, 7 e édition.[24] “Quantum Phénoména », S. Datta, vol. 3 of the Modular Series on solids State Devices,Addison-Weesley, Reading, Mass., 1989.[25] “Monte Carlo Simulation and Measurement of Nanoscale n-MOSFETs”, F.M. Bufler, Y.Asahi, H. Yoshimura, C. Zechner, A. Schenk and W. Fichtner, ETH, Technical Report, April2003.[26] “Electronic Transport in Mesoscopic Systems”, S. Datta, Cambridge University Press, 1995.[27] “Etudes théoriques de structures pour l’électronique rapide et contribution au développementd’un simulateur particulaire Monte Carlo”, Philippe Dollfus, HDR, n°363, Université Paris-Sud, 1999.- 42 -
Chapitre I : Introduction au transport électronique[28] “The Monte Carlo method for the solution of charge transport in semiconductors withapplications to covalent materials, C. Jacoboni, Reviews of modern Physics, vol 55, n° 5,1983.[29] “Monte Carlo simulation of remote Coulomb scattering limited mobility in the metal oxidesemiconductor transistors” F. Gamiz, J.B. Roldan, J.E. Carceller and P. Cartujo, Appl. Phys.Lett., vol 82, 2003, pp: 3251-3253.[30] “Electronic properties of two dimensional systems”, T. Ando, A. Fowler and F. Stern, Reviewof modern Physics, vol.54, n°2, 1982. pp: 437-672.[31] “Electron transport in Si/SiGe modulation doped heterostructures using Monte CarloSimulation”, F. Monsef, P. Dollfus, S. Galdin-Retailleau, H-J. Herzog, T. Hackbarth, JAP,vol.95, n°7, April 2004, pp: 3587-3593.[32] “First order intervalley scattering in low dimensional systems”, Physical Review B, F.Monsef, P.Dollfus, S.Galdin, A.Bournel, vol. 65, 2002, pp: 212304- 04.[33] “Characterization of the hot electron distribution function using six moments”, T. Grasser, H.Kosina, C. Heitzinger and S. Selberherr, Journal of Applied Physics, vol. 91, n°6, 2002,pp:3869-3879.[34] “Physical Properties of Semiconductors”, C. Wolfe, N. Holonyak, G. Stillman, Prentrice Hall,Englewood Cliffs, New Jersey, 1989.[35] “Generalized Effective Mass Approach for Cubic Semiconductor n-MOSFETS on ArbitrarilyOriented Wafers”, A. Rahman, M. Lundstrom and A. Ghosh, Submitted for publicationhttp://falcon.ecn.purdue.edu:8080/publications[36] “DESSIS”, ISE, vol. 4a, 8.0, 2002.[37] www.ioffe.rssi.ru/ SVA/NSM/Semicond/.[38] “Comparative study of phonon limited mobility of two dimensional electrons in strained andunstrained Si metal-oxide-semiconductor field effect transistor”, S. Takagi, J. Hoyt, J. Welserand J. Gibbons, J. Appl. Phys., vol. 80, 1996, pp: 1567-1577.[39] “Electron mobility in extremely thin single-gate silicon on insulator inversion layers”, F.Gamiz, J.B. Roldan, P. Cartujo-Cassinello, J.E. Carceller, J.A. Lopez-Villanueva and S.Rodirguez, Journal of Appl. Phys., vol.86, n°11, 1999, pp:6269-6275.- 43 -
Page 3 and 4: REMERCIEMENTSCette étude a été m
Page 5 and 6: Tables des matièresTABLE DES MATIE
Page 7 and 8: Tables des matières6.1. Comparaiso
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Page 11 and 12: IntroductionREFERENCES[1] “Crammi
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Chapitre III : Etude expérimentale
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ConclusionCONCLUSIONLE TRAVAIL EFFE
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ConclusionFigure C: Interface MASTA
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