etude theorique et experimentale du transport electronique ... - Ief

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Chapitre II : Les différents niveaux de la modélisation7. REFERENCES[1] “A Review of Hydrodynamic and Energy–Transport Models for Semiconductor DeviceSimulation”, T. Grasser, T.W. Tang, H. Kosina, S. Selberherr, Proceeding of IEEE, vol. 91, 2003,pp: 251-273.[2] “Transport equations for electrons in two valley semiconductors”, Blotekjaer, IEEE Trans. ElectronDevices, vol. 17, 1970, pp: 38-47.[3] “Diffusion of hot and cold electron in semiconductor barriers”, Stratton, Physical Review, 126(6),1962, pp: 2002-2013.[4] “The hydrodynamic Model in Semiconductors; Coefficients calculations for the conduction bandof silicon”, M. Rudan, Pitman Res. Notes, Laugman Edition, 1994.[5] “Ballistic metal oxide semiconductor field effect transistor”, K. Natori, J. App. Phys., vol. 76, n°8,1994, pp: 4879- 4890.[6] “The Monte Carlo method for the solution of charge transport in semiconductors with applicationsto covalent materials”, C. Jacoboni and L. Reggiani, Reviews of Modern Physics, vol. 55, n°3,1983.[7] “Density gradient Analysis of MOS Tunnelling”, M.G. Ancona, Z. Yu, R. Dutton, P.J. VanVoorde, M.Cao and D. Vook, IEEE Trans. Electron Devices, vol. 47, n°12, 2000, pp:2310-2319.[8] “Device simulation requirements for sub-30nm CMOS”, Gilberto Curatola, Seminaire ST Crolles,24/02/2005[9] “Electronic Transport in Mesoscopic Systems”, S. Datta, Cambridge University Press, 1995.[10] “Modeling of Quantum transport”, D.K. Ferry, Solid State Physics, vol. 49, 1995, pp: 283-284.[11] “Physique des semi-conducteurs et des composants électronique”, 5 ème édition, H. Mathieu, EditionDunot, 2001.[12] “The ballistic Nanotransistor: A simulation Study”, R. Ren, R. Venugopal, S. Datta and M.Lundstrom, invited paper IEDM, 2004.[13] “Fundamental of carrier transport”, M.S. Lundstrom, Cambridge University Press, 2001.[14] http://www.sciences.univ-nantes.fr/physique/perso/blanquet/synophys/25emaxw/25emaxw.htm[15] “An Improved Hydrodynamic Transport Model for Silicon”, T-W. Tang, S. Ramaswamy and J.Nam, IEEE Trans. Electron Devices, vol.40, n°8, 1993, pp: 1469-1477[16] “Two Formulation of semiconductor Transport Equation based on spherical Harmonic expansionof the Boltzmann Transport equation”, T-W. Tang, S. and H. Gan, IEEE Trans. Electron Devices,vol.47, n°9, 2000, pp: 1726-1732.[17] “Steady State and Transient Analysis of Submicron Devices using Energy Balance and SimplifiedHydrodynamic Models”, Y. Apanovich, A. Lyumkis, B. polsky, A. Shur and P. Balkey, Trans.Computer Aided Designed of Integrated Circuits and Systems, vol.13, n°6, 1994, pp: 702 -70[18] “Generalized energy Transport Models for Semiconductor Device Simulation”, M.C. Vecchi andL.G. Reyna, Solid State Electronics, vol.37, n°10, 1994, pp: 1705-1716.[19] “Comparison of Semiconductor Transport Models Using a Monte Carlo Consistency Test”, S.Ramaswamy and T. Tang, IEEE Trans. Electron Devices, vol. 41, 1994, pp: 76-83- 76 -
Chapitre II : Les différents niveaux de la modélisation[20] “A critical Examination of the Assumptions Underlying Macroscopic Transport Equations forSilicon Devices”, M.A. Stettler, M.A. Alam and M.S. Lundstrom, IEEE Trans. Electron Devices,vol.40, 1993, pp: 733-740.[21] “Influence of Hydrodynamic Models on the Prediction of Submicrometer Device Characteristics”,M. Ieong and T. Tang, IEEE Trans. Electron Devices, vol.44, n° 12, Dec. 1997.[22] “Efficient and Accurate Use of the Energy Transport Method in Device Simulation”, N. Goldsmanand J. Frey, IEEE Trans. Electron Devices, vol.35, n°9, September 1988, pp:1524-1529[23] “Hydrodynamic Equations for Semiconductors with Non parabolic Band Structure”, R. Thoma, B.Meinerzhagen, H.J. Peifer and W.L. Engl, IEEE Trans. Electron Devices, vol. 38, n°6, June 1991,pp: 1343-1353.[24] “Accounting for Band structure effects in the Hydrodyanmic model: A first order approach forsilicon device simulation”, T.J. Bordelon, X.-L. Wang, C. Maziar and A. F. Tash, Solid-StateElectronics, vol. 35, n°2, 1992, pp: 131-139.[25] “Transport Coefficient For a Silicon Hydrodynamic Model Extracted from Inhomogenus MonteCarlo Simulations”, S.C. Lee and T-W. Tang, Solid-State Electronics, vol. 35, n°4, 1992, pp: 561-569.[26] “The influence of the thermal Equilibrium Approximation on the Accuracy of Classical TwoDimensional Numerical Modelling of Silicon Sub micrometer MOS Transistor”, B. Meinerzhagen,W. L. Engl, IEEE Trans. Electron Devices, vol.35, n°6, 1988.[27] “An Energy relaxation time model for device simulation”, B. Gonzales, V. Palankovski, H. Kosinaand S. Selberherr, Solid-State Electronics 43, 1999, 1791-1795.[28] “Physical models for numerical device simulation”, G. Baccarani, M. Rudan, R. Guerrieri and P.Ciampolini, in Process and Device Modeling, vol.1, Advanced TACD for VLSI, 1986, pp: 107-158.[29] “Characterization of the hot electron distribution function using six moments”, T. Grasser, H.Gosina, C. Heitzinger and S. Selberherr, Journal of Applied Physics, vol. 91, n°6, 2002, pp: 3869-3879.[30] “Non parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductordevices”, A.W. Smith and K.F. Brennan, Solid-State Electron., vol.39, n°11, 1996, pp: 1659-1668.[31] “Using six moments of Boltzmann’s transport equation for device simulation”, T. Grasser, H.Gosina, C. Heitzinger and S. Selberherr, Journal of Applied Physics, vol. 90,n°5, 2001, pp: 2389-2396[32] “Investigation of the Impact ionization in the Hydrodynamic Model”, K. Souissi, F. Odeh, H.Tang, A. Gnudi and P.F. Lu, IEEE Trans. Electron Devices, vol.40. n°8, 1993.[33] “Impact ionization in Silicon”, E. Cartier, M.V. Fischetti, E. A. Eklund and F.R. McFeely, Appl.Phys. Lett.62 (25), 1993, pp: 3339-3341.[34] “Accurate impact ionization model which accounts for hot and cold carrier populations”, T.Grasser, H. Gosina, C. Heitzinger and S. Selberherr, Journal of Applied Physics, vol. 80,n°4, 2001,pp: 613-615.[35] “Computation of Drain and Substrat Currents in Ultra Short Channel nMOSFET’s Using theHydrodynamic Model”, K. Rahmat, J. White, D. Antoniadis, IEEE, Trans. On Computer AidedDesign of Integrated Circuits and Systems, vol.12, n°6, June 1993.- 77 -
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REMERCIEMENTSCette étude a été m
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Tables des matièresTABLE DES MATIE
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Tables des matières6.1. Comparaiso
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IntroductionINTRODUCTIONCONTEXTE ET
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IntroductionREFERENCES[1] “Crammi
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Chapitre I : Introduction au transp
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Chapitre III : Etude expérimentale
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Chapitre III : Etude expérimentale
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Chapitre IV : Modélisation analyti
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ConclusionCONCLUSIONLE TRAVAIL EFFE
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ConclusionFigure C: Interface MASTA
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