UNIVERSIDAD COMPLUTENSE DE MADRID

261
Bibliografía
Oxides after Heavy Ions, Electrons or X-ray Irradiation”, IEEE Transactions on
Nuclear Science, Vol. 47, nº 3, pp. 566-573, June 2000.
[Cha73] R. J. Chaffin, Microwave Semiconductor Devices: Fundamentals and Radiation
Effects, New York Wiley, pp. 109-137, 1973.
[Che00] W. K. Chen, The VLSI Handbook, CRC Press LLC, USA, 2000.
[Chr97] D. Christiansen et alt., Electronics Engineers’ Handbook, 4 th Edition, McGraw-Hill,
United States of America, 1997.
[Cit95] M. Citterio, S. Rescia and V. Radeka, “Radiation Effects at Cryogenic Temperatures
in Si-JFET, GaAs MESFET and MOSFET Devices”, IEEE Transactions on Nuclear
Science, Vol. 42, nº 6, pp. 2266-2270, December 1995.
[Cit96] M. Citterio, J. Kierstead, S. Rescia and V. Radeka, “Radiation Effects on Si-JFET
Devices for Front-End Electronics”, IEEE Transactions on Nuclear Science, Vol. 43,
nº 3, pp. 1576-1584, June 1996.
[Cla95] S. D. Clark, J. P Bings, M. C. Maber, M. K. Williams, D. R. Alexander and R. L.
Pease, “Plastic packaging and burn-in effects on ionizing dose response in CMOS
microcircuits”, IEEE Transactions on Nuclear Science, Vol. 42, nº 6, pp. 1607-1614,
December 1995.
[Dar93] M. R. Darwish, M. A. Shibib, M. R. Pinto and J. L. Titus, “Single Event Rupture of
Power DMOS Transistors”, Proceedings of the Electron Devices Meeting, pp. 671-
674, Washington (USA), 5-8 December 1993.
[Dem96] T. A. DeMassa, Z. Ciccone, Digital Integrated Circuits, John Wiley & Sons, USA,
1996.
[Den00] M. Dentan, “Radiation Effects on Electronics Components and Circuits”, CERN
training course, Ginebra (Suiza), 10-12 de Abril de 2000.
[Den02] R. Denz and F. Rodriguez-Mateos, “Radiation Tolerance of Components Used in the
Protection System of LHC Superconducting Elements”, Proceedings of the 7th
Workshop on Radiation Effects on Components and Systems, pp. 159-161, Padova
(Italy), September 2002.
[Dev02] Y. Deval, H. Lapuyade, P. Fouillat, H. Barnaby, F. Darracq, R. Briand, D. Lewis and
R. D. Schrimpf, “Evaluation of a Design Methodology Dedicated to Dose-Rate-
Hardened Linear Integrated Circuits”, IEEE Transactions on Nuclear Science, vol.
49, nº 3, pp. 1468-1473, June 2002.
[Dod00] P.E. Dodd, M. R. Shaneyfelt, D. S. Walsh, J.R.Schwank, G. L. Hash, R. A. Loemker,
B. L. Draper and P. S.Winokur, “Single-Event Upset and Snapback in Silicon-on-
Insulator Devices and Integrated Circuits”, IEEE Transactions on Nuclear Science,
Vol. 47, nº 6, pp. 2165-2174, December 2000.
[Dor99] D. Dorfan, T. Dubbs, A. A. Grillo, N. E. Ipe, S. Mao, W. Rowe, H. F.-W.
Sadrozinski, A. Seiden, E. Spencer, S. Stromberg and R. Wichmann, “Measuremente
of Dose Rate Dependence of Radiation Induced Damage to the Current Gain in
Bipolar Transistor”, IEEE Transactions on Nuclear Science, Vol. 46, nº 6, pp. 1884-
1890, December 1999.
[Duf92] C. Dufour, P. Garnier, T. Carrière, J. Beaucour, R. Ecoffet and M. Labrunée, “Heavy
Ion Induced Single Hard Errors on Submicronic Memories”, IEEE Transactions on
Nuclear Science, Vol. 39, nº 6, pp. 1693-1697, December 1992.