UNIVERSIDAD COMPLUTENSE DE MADRID

Bibliografía
[Pea00] R. L. Pease, J. Krieg, M. Gehlhausen, D. Platteter and J. Black, “Total Dose Induced
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Fifth European Conferences on Radiation Effects on Components and Systems, pp.
569-572, 13-17 September, 2000.
[Pea01] R. L. Pease, A. Sternberg, L. Massengill, R. Schrimpf, S. Buchner, M. Savage, J.
Titus, and T. Turflinger, “Critical Charge for Single-Event Transients (SETs) in
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[Pey93] A. J Peyton, V. Walsh, “Analog Electronic with Op Amps: a source book of practical
circuits”, Cambridge University Press, Cambridge, UK, 1993.
[Rag47] J. R. Ragazzini, R. H. Randall and F. A. Russell, “Analysis of Problems in Dynamics
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[Ras00] M. H. Rashid, “Circuitos Microelectrónicos: Análisis y Diseño”, International
Thompson Editores, S. A., México, 2000.
[Ras95] M. H. Rashid, “Electrónica de Potencia. Circuitos, Dispositivos y Aplicaciones”, 2 da
edición, Prentice Hall Hispanoamericana, México, 1995.
[Rax97] B. G. Rax, C. I. Lee and A. H. Johnston, “Degradation of Precision Reference
Devices in Space Environments”, IEEE Transactions on Nuclear Science, Vol. 44, nº
6, pp. 1939-1944, December 1997.
[Rax99] B. G. Rax, A. H. Johnston and T. Miyahira, “Displacement Damage in Bipolar Linear
Integrated Circuits”, IEEE Transactions on Nuclear Science, vol. 46, nº 6, pp. 1660-
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[RD483] “RD48 3 rd Status Rep. “, CERN, Geneva, Switzerland, CERN/LHCC 2000-009, Dec.
1999, http://rd48.web.cern.ch/rd48/status-reports/RD48-3rd-status-report.pdf.
[RisAD] J. R. Riskin, “A user’s guide to IC instrumentation amplifiers”. Application notes
from Analog Devices, 2000.
[Ros82] B. H. Rose and C. E. Barnes, “Proton Damage Effects on Light Emitting Diodes”,
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[Sai00] F. Saigné, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R. D. Schrimpf, K. F.
Galloway, “Experimental procedure to predict the competition between the
degradation induced by irradiation and thermal annealing of oxide trapped charge in
MOSFETs”, IEEE Transactions on Nuclear Science, vol. 47, nº 6 , pp. 2329-2333,
December 2000.
[Sai01] F. Saigne, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R. D. Schrimpf, K. F.
Galloway, “Evaluation of MOS devices’ total dose response using the isochronal
annealing method”, IEEE Transactions on Nuclear Science, vol. 48, nº 6, pp. 2170-
2173, December 2001.
[Sau00] J. D. Saussine, D. Harmonic, E. Feuilloley and O. Feuillatre, “Components Off the
Shelf for Nuclear Industry Environment greater than 100 kGy(Si)”, Proceedings of
the Fifth European Conferences on Radiation Effects on Components and Systems,
pp. 424-428, 13-17 September, 2000.
[Sav01] M. V. Savage, T. Turflinger, J. W. Howard Jr. and S. Buchner, “A compendium of
single event transient data”, Proceedings of the 2001 IEEE Radiation Effects Data
Workshop, pp. 134-141, Vancouver (Canada), July, 16 th -20 th , 2001.
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