Bulletin 2011/50 - European Patent Office
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Bulletin 2011/50 - European Patent Office

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(H01J) I.1(1)<br />

(72) KRASSNITZER, Siegfried, A-6800 Feldkirch,<br />

AT<br />

HAGMANN, Juerg, CH-9468 Sax, CH<br />

GSTOEHL, Oliver, FL-9496 Balzers, LI<br />

(74) Kempkens, Anke, Vordere Mühlgasse 187,<br />

D-86899 Landsberg a. Lech, DE<br />

H01J 37/32 → (51) H05H 1/34<br />

H01J 37/34 → (51) H01J 37/32<br />

(51) H01J 49/00 (11) 2 394 289 A1*<br />

G01N 33/68<br />

(25) En (26) En<br />

(21) 10711695.6 (22) 08.02.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) GB 2010/0<strong>50</strong>194 08.02.2010<br />

(87) WO 2010/089611 2010/32 12.08.2010<br />

(30) 06.02.2009 GB 0901933<br />

15.04.2009 GB 0906465<br />

28.05.2009 US 181708 P<br />

(54) • VERFAHREN ZUR MASSENSPEKTROMET-<br />

RIE<br />

• METHOD OF MASS SPECTROMETRY<br />

• PROCÉDÉ DE SPECTROMÉTRIE DE<br />

MASSE<br />

(71) Micromass UK Limited, Floats Road,<br />

Wythenshawe Manchester M23 9LZ, GB<br />

(72) CLAUDE, Emmanuel, Altrincham, GB<br />

VISSERS, Johannes Petrus Cornelis, 1271<br />

XA Huizen, NL<br />

RICHARDSON, Keith, High Peak Derbyshire,<br />

GB<br />

SNEL, Marten F, Knutsford Cheshire, GB<br />

(74) Lessard, Jason Donat, et al, Hepworth<br />

Browne 29 Wood Street Stratford-upon-<br />

Avon, Warwickshire, CV37 6JG, GB<br />

H01J 49/06 → (51) H01J 49/32<br />

(51) H01J 49/32 (11) 2 394 290 A1*<br />

H01J 49/06<br />

(25) Fr (26) Fr<br />

(21) 10701685.9 (22) 29.01.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) EP 2010/051101 29.01.2010<br />

(87) WO 2010/089260 2010/32 12.08.2010<br />

(30) 06.02.2009 FR 09<strong>50</strong>764<br />

(54) • MAGNETISCHES ACHROMATISCHES<br />

MASSENSPEKTROMETER MIT DOPPEL-<br />

FOKUSSIERUNG<br />

• MAGNETIC ACHROMATIC MASS SPEC-<br />

TROMETER WITH DOUBLE FOCUSING<br />

• SPECTROMETRE DE MASSE MAGNE-<br />

TIQUE ACHROMATIQUE A DOUBLE FOCA-<br />

LISATION<br />

(71) Cameca, 29 Quai des Grésillons, 92230<br />

Genneviliiers, FR<br />

(72) DE CHAMBOST, Emmanuel, F-91470<br />

Limours, FR<br />

(74) Collet, Alain, et al, Marks & Clerk France<br />

Conseils en Propriété Industrielle Immeuble "<br />

Visium " 22, avenue Aristide Briand, 94117<br />

Arcueil Cedex, FR<br />

H01J 61/30 → (51) H01J 61/52<br />

(51) H01J 61/52 (11) 2 394 291 A1*<br />

H01J 61/30<br />

(25) De (26) De<br />

(21) 10721803.4 (22) 27.05.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO SE SI SK SM TR<br />

(86) EP 2010/057294 27.05.2010<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(87) WO 2010/149458 2010/52 29.12.2010<br />

(30) 22.06.2009 DE 102009029867<br />

(54) • HOCHDRUCKENTLADUNGSLAMPE<br />

• HIGH-PRESSURE DISCHARGE LAMP<br />

• LAMPE À DÉCHARGE HAUTE PRESSION<br />

(71) Osram AG, Hellabrunner Strasse 1, 81543<br />

München, DE<br />

(72) STOCKWALD, Klaus, 82110 Germering, DE<br />

(51) H01L 21/20 (11) 2 394 292 A2*<br />

(25) En (26) En<br />

(21) 10739133.6 (22) 04.02.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/023230 04.02.2010<br />

(87) WO 2010/091200 2010/32 12.08.2010<br />

(88) 02.12.2010<br />

(30) 04.02.2009 US 365734<br />

(54) • HERSTELLUNG VON HALBLEITERMATE-<br />

RIALIEN<br />

• SEMICONDUCTOR MATERIAL MANUFAC-<br />

TURE<br />

• FABRICATION D'UN MATÉRIAU SEMI-<br />

CONDUCTEUR<br />

(71) Micron Technology, Inc., 8000 South Federal<br />

Way, Boise, ID 83716-9632, US<br />

(72) SINHA, Nishant, Boise, Idaho 83716, US<br />

SANDHU, Gurtej S., Boise, Idaho 83706, US<br />

SMYTHE, John, Boise, Idaho 83709, US<br />

(74) Maury, Richard Philip, Marks & Clerk LLP 90<br />

Long Acre, GB-London WC2E 9RA, GB<br />

H01L 21/20 → (51) H01L 21/762<br />

(51) H01L 21/265 (11) 2 394 293 A2*<br />

(25) En (26) En<br />

(21) 09839838.1 (22) 29.12.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/069754 29.12.2009<br />

(87) WO 2010/090693 2010/32 12.08.2010<br />

(88) 14.10.2010<br />

(30) 06.02.2009 US 367306<br />

(54) • IONENIMPLANTIERTES SUBSTRAT MIT<br />

EINER KAPPENSCHICHT UND VERFAH-<br />

REN<br />

• ION IMPLANTED SUBSTRATE HAVING<br />

CAPPING LAYER AND METHOD<br />

• SUBSTRAT À IONS IMPLANTÉS AYANT<br />

UNE COUCHE DE COIFFAGE ET PROCÉDÉ<br />

(71) Applied Materials, Inc., 30<strong>50</strong> Bowers Avenue,<br />

Santa Clara, CA 9<strong>50</strong>54, US<br />

(72) DEL AGUA BORNIQUEL, Jose Ignacio, 3001<br />

Kessel-Lo, BE<br />

POON, Tze, Sunnyvale CA 94085, US<br />

SCHREUTELKAMP, Robert, 3001 Leuven, BE<br />

FOAD, Majeed, Sunnyvale CA 94087, US<br />

(74) Zimmermann & Partner, Postfach 330 920,<br />

80069 München, DE<br />

H01L 21/60 → (51) B23K 35/00<br />

(51) H01L 21/66 (11) 2 394 294 A2*<br />

(25) En (26) En<br />

(21) 10738973.6 (22) 26.01.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/022139 26.01.2010<br />

(87) WO 2010/090914 2010/32 12.08.2010<br />

(88) 07.10.2010<br />

(30) 03.02.2009 US 149605 P<br />

(54) • PRÜFSYSTEM FÜR STRUKTURIERTE<br />

WAFER ANHAND EINES VIBRATIONS-<br />

FREIEN KONTAKTPOTENZIALDIFFERENZ-<br />

SENSORS<br />

140<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>50</strong>/<strong>2011</strong>) 14.12.<strong>2011</strong><br />

• PATTERNED WAFER INSPECTION SYS-<br />

TEM USING A NON-VIBRATING CONTACT<br />

POTENTIAL DIFFERENCE SENSOR<br />

• SYSTÈME D'INSPECTION DE TRANCHE À<br />

MOTIF UTILISANT UN CAPTEUR À DIFFÉ-<br />

RENCE DE POTENTIEL À CONTACT NON<br />

VIBRANT<br />

(71) Qcept Technologies Inc., 75 Fifth Street, NW,<br />

Suite 740, Atlanta, GA 30308, US<br />

(72) SCHULZE, Mark A., Austin TX 78737, US<br />

LIU, Jun, Marietta, GA30067, US<br />

HAWTHORNE, Jeffrey Alan, Decatur GA<br />

30030, US<br />

(74) Lawrence, John, Barker Brettell LLP 100<br />

Hagley Road Edgbaston, GB-Birmingham<br />

B16 8QQ, GB<br />

(51) H01L 21/66 (11) 2 394 295 A2*<br />

G01N 21/88<br />

(25) En (26) En<br />

(21) 10739199.7 (22) 05.02.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/023396 05.02.2010<br />

(87) WO 2010/091307 2010/32 12.08.2010<br />

(88) 04.11.2010<br />

(30) 06.02.2009 US 1<strong>50</strong>549 P<br />

(54) • AUSWAHL EINES ODER MEHRERER<br />

PARAMETER FÜR WAFERPRÜFUNG<br />

• SELECTING ONE OR MORE PARAMETERS<br />

FOR INSPECTION OF A WAFER<br />

• SÉLECTION D'UN OU PLUSIEURS PARA-<br />

MÈTRES POUR L'INSPECTION D'UNE<br />

TRANCHE<br />

(71) KLA-Tencor Corporation, One Technology<br />

Drive, Milpitas, CA 9<strong>50</strong>35, US<br />

(72) LEE, Chris, Fremont CA 94539, US<br />

GAO, Lisheng, Morgan Hill CA 9<strong>50</strong>37, US<br />

LUO, Tao, Fremont CA 94539, US<br />

WU, Kenong, Davis CA 95616, US<br />

TORELLI, Tommaso, Berkeley CA 94702, US<br />

VAN RIET, Michael J., Sunnyvale CA 94087,<br />

US<br />

DUFFY, Brian, San Jose CA 95120, US<br />

(74) Lukaszyk, Szymon, Kancelaria <strong>Patent</strong>owa<br />

Lukaszyk ul. Glowackiego 8/6, 40-062 Katowice,<br />

PL<br />

H01L 21/74 → (51) H01L 21/8252<br />

(51) H01L 21/762 (11) 2 394 296 A1*<br />

H01L 21/20<br />

(25) En (26) En<br />

(21) 10739242.5 (22) 08.02.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/023514 08.02.2010<br />

(87) WO 2010/091367 2010/32 12.08.2010<br />

(30) 06.02.2009 US 1<strong>50</strong>392 P<br />

(54) • GRABENBILDUNGSVERFAHREN ZUR<br />

FREISETZUNG EINES DÜNNSCHICHT-<br />

SUBSTRATS AUS EINER WIEDERVER-<br />

WENDBAREN HALBLEITERSCHABLONE<br />

• TRENCH FORMATION METHOD FOR<br />

RELEASING A THIN-FILM SUBSTRATE<br />

FROM A REUSABLE SEMICONDUCTOR<br />

TEMPLATE<br />

• PROCÉDÉ DE FORMATION DE TRANCHÉE<br />

PERMETTANT DE DÉCOLLER UN SUBS-<br />

TRAT À COUCHES MINCES D'UN MODÈLE<br />

SEMI-CONDUCTEUR RÉUTILISABLE<br />

(71) Solexel, Inc., 1530 McCarthy Boulevard,<br />

Milpitas, CA 9<strong>50</strong>35-7405, US<br />

(72) WANG, David, Xuan-Qi, Fremont, CA 94539,<br />

US<br />

MOSLEHI, Mehrdad, M., Los Altos, CA<br />

94024, US

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