Bulletin 2011/50 - European Patent Office
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(H01J) II.1(1)<br />

Nakayama, Yoshihiko, c/o Hitachi Science<br />

Systems Ltd., Hitachinaka-shi Ibaraki, JP<br />

(74) Strehl Schübel-Hopf & Partner, Maximilianstrasse<br />

54, 80538 München, DE<br />

H01J 37/28 → (51) H01J 37/141<br />

H01J 37/28 → (51) H01J 37/20<br />

H01J 37/302 → (51) H01J 37/317<br />

(51) H01J 37/317 (11) 2 027 594 B1<br />

H01J 37/04 H01J 37/302<br />

(25) En (26) En<br />

(21) 06786767.1 (22) 10.07.2006<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 25.02.2009<br />

(86) US 2006/026725 10.07.2006<br />

(87) WO 2007/008792 2007/03 18.01.2007<br />

(30) 08.07.2005 US 697780 P<br />

(54) • Vorrichtung und Verfahren zur kontrollierten<br />

Fertigung von Halbleitern mittels Teilchenstrahlen<br />

• Apparatus and method for controlled<br />

particle beam manufacturing of semiconductors<br />

• Appareil et procédé de fabrication contrôle<br />

de semi-conducteur avec faisceau de<br />

particules<br />

(73) NexGen Semi Holding, Inc., 30251 Golden<br />

Lantern, Suite E522, Laguna Niguel, CA<br />

92677-5993, US<br />

(72) ZANI, Michael John, Laguna Niguel, California<br />

92677, US<br />

SCOTT, Jeffrey Winfield, Carpenteria, California<br />

93013, US<br />

BENNAHMIAS, Mark Joseph, Torrance, CA<br />

90<strong>50</strong>3, US<br />

MAYSE, Mark Anthony, Dublin, California<br />

94568, US<br />

(74) Polypatent, Braunsberger Feld 29, 51429<br />

Bergisch Gladbach, DE<br />

H01J 37/317 → (51) H01J 37/20<br />

H01J 37/32 → (51) H01J 17/04<br />

(51) H01J 37/34 (11) 1 949 409 B1<br />

(25) Fr (26) Fr<br />

(21) 06831028.3 (22) 26.10.2006<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

AL BA HR MK RS<br />

(43) 30.07.2008<br />

(86) FR 2006/002415 26.10.2006<br />

(87) WO 2007/051917 2007/19 10.05.2007<br />

(30) 07.11.2005 EP 05292355<br />

(54) • VERFAHREN UND INSTALLATION ZUR<br />

UNTERDRUCKFÄRBUNG EINES METALL-<br />

STREIFENS MITTELS MAGNETRON-<br />

SPUTTERN<br />

• METHOD AND INSTALLATION FOR THE<br />

VACUUM COLOURING OF A METAL STRIP<br />

BY MEANS OF MAGNETRON SPUTTERING<br />

• PROCEDE ET INSTALLATION D'AVIVAGE<br />

SOUS VIDE PAR PULVERISATION<br />

MAGNETRON D'UNE BANDE METALLIQUE<br />

(73) ArcelorMittal France, 1à 5 Rue Luigi Cherubini,<br />

93200 Saint-Denis, FR<br />

(72) CORNIL, Hugues, B-4570 Marchin, BE<br />

DEWEER, Benoît, B-1933 Sterrebeek, BE<br />

MABOGE, Claude, B-56<strong>50</strong> Castillon, BE<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(74) Plaisant, Sophie Marie, ARCELOR France<br />

Arcelor Research Intellectual Property 5 Rue<br />

Luigi Cherubini, 93212 La Plaine Saint-Denis<br />

Cedex, FR<br />

H01J 41/06 → (51) G01M 3/20<br />

H01J 41/12 → (51) H01J 7/14<br />

(51) H01J 61/12 (11) 1 416 516 B1<br />

H01J 9/38<br />

(25) En (26) En<br />

(21) 03024707.6 (22) 28.10.2003<br />

(84) DE NL<br />

(43) 06.05.2004<br />

(30) 01.11.2002 JP 2002319980<br />

(54) • Entladungslampe und Verfahren zu ihrer<br />

Herstellung<br />

• Discharge lamp and method to produce it<br />

• Lampe a décharge et son procédé de<br />

fabrication<br />

(73) USHIODENKI KABUSHIKI KAISHA, 6-1, Otemachi<br />

2-chome, Chiyoda-ku, Tokyo 100-<br />

0004, JP<br />

(72) Kawaguchi, Masataka, Himeji-shi Hyogo-ken,<br />

JP<br />

Uramoto, Motoko, Kakogawa-shi Hyogo-ken,<br />

JP<br />

Masashi, Dan, Himeji-shi Hyogo-ken, JP<br />

Horikawa, Yoshihiro, Himeji-shi Hyogo-ken,<br />

JP<br />

(74) Tomerius, Isabel, et al, Lang & Tomerius<br />

<strong>Patent</strong>anwälte Landsberger Strasse 300,<br />

80687 München, DE<br />

(51) H01K 1/18 (11) 2 081 215 B1<br />

H01K 1/32 H01K 1/28<br />

(25) En (26) En<br />

(21) 08100597.7 (22) 17.01.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(43) 22.07.2009<br />

(54) • Filamentausrichtungskapsel für eine elektrische<br />

Lampe<br />

• Filament alignment capsule for an electric<br />

lamp<br />

• Capsule d'alignement de filament pour<br />

lampe électrique<br />

(73) Flowil International Lighting (HOLDING) B.V.,<br />

Prins Bernhardplein 200, 1097 JB Amsterdam,<br />

NL<br />

(72) Van De Poel, Gunther, 3473 Waanrode, BE<br />

Rao Mekala, Subba, 3300 Tienen, BE<br />

(74) Murnane, Graham John, Murgitroyd &<br />

Company 165-169 Scotland Street, Glasgow<br />

G5 8PL, GB<br />

(51) H01L 21/00 (11) 2 184 765 B1<br />

(25) De (26) De<br />

(21) 09173469.9 (22) 20.10.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(43) 12.05.2010<br />

(30) 05.11.2008 CH 17482008<br />

18.09.2009 CH 14522009<br />

(54) • Chip-Auswerfer<br />

• Die-ejector<br />

• Ejecteur de puce<br />

(73) Esec AG, Hinterbergstrasse 32, 6330 Cham,<br />

CH<br />

(72) Schnetzler, Daniel, 6314 Unteraegeri, CH<br />

Muehlemann, Ives, 6330 Cham, CH<br />

Kloeckner, Daniel, 6004 Luzern, CH<br />

(74) Falk, Urs, <strong>Patent</strong>anwaltsbüro Dr. Urs Falk<br />

Eichholzweg 9A, 6312 Steinhausen, CH<br />

635<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>50</strong>/<strong>2011</strong>) 14.12.<strong>2011</strong><br />

(51) H01L 21/02 (11) 1 229 569 B1<br />

(25) En (26) En<br />

(21) 01308520.4 (22) 05.10.2001<br />

(84) DE FR GB IT<br />

(43) 07.08.2002<br />

(30) 31.01.2001 JP 2001022905<br />

(54) • Kondensator-Halbleiteranordnung und<br />

Herstellungsmethode<br />

• Capacitor, semiconductor device comprising<br />

the same and method of fabricating<br />

thereof<br />

• Dispositif semiconducteur, condensateur et<br />

méthode de sa fabrication<br />

(73) FUJITSU LIMITED, 1-1, Kamikodanaka 4chome,<br />

Nakahara-ku, Kawasaki-shi, Kanagawa<br />

211-8588, JP<br />

(72) Kurasawa, Masaki, c/o Fujitsu Limited,<br />

Kawasaki-shi, Kanakawa 211-8588, JP<br />

Kurihara, Kazuaki, c/o Fujitsu Limited,<br />

Kawasaki-shi, Kanakawa 211-8588, JP<br />

Maruyama, Kenji, c/o Fujitsu Limited, Kawasaki-shi,<br />

Kanakawa 211-8588, JP<br />

(74) Fenlon, Christine Lesley, et al, Haseltine Lake<br />

LLP Lincoln House, 5th Floor 300 High<br />

Holborn, London WC1V 7JH, GB<br />

(51) H01L 21/02 (11) 1 797 581 B1<br />

H01L 21/285 C23C 16/06<br />

C23C 16/40 C01G 55/00<br />

(25) En (26) En<br />

(21) 05789992.4 (22) 26.09.2005<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 20.06.2007<br />

(86) IB 2005/002833 26.09.2005<br />

(87) WO 2006/035281 2006/14 06.04.2006<br />

(30) 28.09.2004 JP 2004281468<br />

(54) • VORLÄUFER FÜR DIE FILMBILDUNG UND<br />

VERFAHREN ZUR BILDUNG EINES<br />

RUTHENIUMHALTIGEN FILMS<br />

• PRECURSOR FOR FILM FORMATION AND<br />

METHOD FOR FORMING RUTHENIUM-<br />

CONTAINING FILM<br />

• PRECURSEUR POUR FORMATION DE<br />

COUCHE MINCE ET PROCEDE DE FOR-<br />

MATION DE COUCHE MINCE CONTENANT<br />

DU RUTHENIUM<br />

(73) L'AIR LIQUIDE, Société Anonyme pour<br />

l'Etude et l'Exploitation des Procédés<br />

Georges Claude, 75, quai d'Orsay, 7<strong>50</strong>07<br />

Paris, FR<br />

(72) DUSSARRAT, Christian, C/O L'AIR LIQUIDE<br />

S.A., F-7<strong>50</strong>07 PARIS, FR<br />

YANAGITA, Kazutaka, c/o L'AIR LIQUIDE SA,<br />

F-7<strong>50</strong>07 Paris Cedex, FR<br />

GATINEAU, Julien, c/o L'AIR LIQUIDE SA, F-<br />

7<strong>50</strong>07 Paris Cedex, FR<br />

(74) Conan, Philippe Claude, et al, L'Air Liquide<br />

SA Direction de la Propriété Intellectuelle 75,<br />

quai d'Orsay, 75321 Paris Cédex 07, FR<br />

H01L 21/02 → (51) C09G 1/02<br />

H01L 21/027 → (51) G03F 7/075<br />

(51) H01L 21/20 (11) 1 232 520 B1<br />

(25) En (26) En<br />

(21) 00970569.0 (22) 04.10.2000<br />

(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />

LU MC NL PT SE<br />

(43) 21.08.2002<br />

(86) US 2000/027354 04.10.2000<br />

(87) WO 2001/037327 2001/21 25.05.2001<br />

(30) 17.11.1999 US 441753<br />

(54) • PENDEOEPITAKTISCHES WACHSTUM<br />

VON GALLIUMNITRID-SCHICHTEN AUF<br />

SAPHIRSUBSTRATEN

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