Streuung von Röntgenstrahlen an selbstorganisierten Halbleiter ...
Streuung von Röntgenstrahlen an selbstorganisierten Halbleiter ...
Streuung von Röntgenstrahlen an selbstorganisierten Halbleiter ...
Erfolgreiche ePaper selbst erstellen
Machen Sie aus Ihren PDF Publikationen ein blätterbares Flipbook mit unserer einzigartigen Google optimierten e-Paper Software.
132 9 Literaturverzeichnis<br />
[BPS53] J.A.Burton, R.C.Prim, W.P.Slichter<br />
J. chem. Phys. 21, 1987 (1953)<br />
[Bru02] K.Brunner<br />
Si/Ge N<strong>an</strong>ostructures<br />
Rep. Prog. Phys. 65, 27-72 (2002)<br />
[BSY00] P.Ballet, J.B.Smathers, H.Y<strong>an</strong>g, C.L.Workm<strong>an</strong>, G.J.Salamo<br />
Sc<strong>an</strong>ning tunneling microscopy investigation of truncated InP/GaInP 2 self-assembled isl<strong>an</strong>ds<br />
Appl. Phys. Lett. 77, 3406 (2000)<br />
[CAM96] S.Christi<strong>an</strong>sen, M.Albrecht, J.Michler, H.P.Strunk<br />
Elastic <strong>an</strong>d Plastic Relaxation in Slightly Misfitting Epitaxial Layers – A Qu<strong>an</strong>titative<br />
Approach by Three-Dimensional Finite Element Calculations<br />
Phys. Stat. Sol. (a) 156, 129 (1996)<br />
[CAS94] S.Christi<strong>an</strong>sen, M.Albrecht, H.P.Strunk, H.J.Maier<br />
Strained state of Ge(Si) isl<strong>an</strong>ds on Si: Finite element calculations <strong>an</strong>d comparison to convergent<br />
beam electron-diffraction measurements<br />
Appl. Phys. Lett. 64, 3617 (1994)<br />
[CAS95] S.Christi<strong>an</strong>sen, M.Albrecht, H.P.Strunk, P.O.H<strong>an</strong>sson, E.Bauser<br />
Reduced effective misfit in laterally limited structures such as epitaxial isl<strong>an</strong>ds<br />
Appl. Phys. Lett. 66, 574 (1995)<br />
[CDE01] G.Capellini, M.De Seta, F.Ev<strong>an</strong>gelisti<br />
SiGe intermixing in Ge/Si(100) isl<strong>an</strong>ds<br />
Appl. Phys. Lett. 78, 303 (2001)<br />
[ChP92] P.C.Chou, N.J.Pag<strong>an</strong>o<br />
Elasticity Tensor, dyadic <strong>an</strong>d engineering approaches<br />
Dover (1992)<br />
[CRP92] A.G.Cullis, D.J.Robbins, A.J.Pidduck, P.W.Smith<br />
The characterization of strain-modulated surface undulations formed upon epitaxial Si 1-xGe x<br />
alloy layers on Si<br />
J. Cryst. Growth 123, 333 (1992)<br />
[CZD00] S.A.Chaparro, Y.Zh<strong>an</strong>g, J.Drucker, D.Ch<strong>an</strong>drasekhar, D.J.Smith<br />
Evolution of Ge/Si(001) isl<strong>an</strong>ds: Isl<strong>an</strong>d size <strong>an</strong>d temperature dependence<br />
J. Appl. Phys. 87, 2245 (2000)<br />
[DEP64] J.P.Dismukes, L.Ekstrom, R.J.Paff<br />
J. Phys. Chem. 68, 10 (1964)<br />
[DFL95] K.Dettmer, W.Freim<strong>an</strong>, M.Levy, Yu.L.Khait, R.Beserm<strong>an</strong><br />
Kinetics of interdiffusion in strained n<strong>an</strong>ometer period Si/Ge superlattices studied by Ram<strong>an</strong><br />
scattering<br />
Appl. Phys. Lett. 66, 2376 (1995)<br />
[Dos92] H.Dosch<br />
Critical Phenomena at Surfaces <strong>an</strong>d Interfaces