Bulletin 2009/49 - European Patent Office
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Bulletin 2009/49 - European Patent Office

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(G11C) I.1(1)<br />

(30) 16.02.2007 US 902003 P<br />

02.03.2007 US 892705 P<br />

17.08.2007 US 840692<br />

(54) • SYSTEM MIT EINER ODER MEHREREN<br />

SPEICHERVORRICHTUNGEN<br />

• SYSTEM HAVING ONE OR MORE MEM-<br />

ORY DEVICES<br />

• SYSTÈME DOTÉ D'UN OU PLUSIEURS<br />

DISPOSITIF(S) DE MÉMOIRE<br />

(71) Mosaid Technologies Incorporated, 11 Hines<br />

Road, Suite 203, Ottawa, ON K2K 2X1, CA<br />

(72) OH, HakJune, Kanata, ON K2T 1J3, CA<br />

PRZYBYLSKI, Steven, Ann Arbor, MI 48105,<br />

US<br />

PYEON, Hong, Beom, Kanata, ON K2M 2E1,<br />

CA<br />

SCHUETZ, Roland, Ottawa, ON K1M 0Y8, CA<br />

(74) Lang, Johannes, <strong>Patent</strong>- und Rechtsanwälte<br />

Bardehle Pagenberg Dost Altenburg Geissler<br />

Galileiplatz 1, 81679 München, DE<br />

G11C 7/10 → (51) G11C 16/02<br />

G11C 7/10 → (51) H03K 17/296<br />

(51) G11C 7/12 (11) 2 126 917 A1*<br />

G11C 16/24<br />

(25) En (26) En<br />

(21) 07845610.0 (22) 29.11.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

(86) CA 2007/0021<strong>49</strong> 29.11.2007<br />

(87) WO 2008/064480 2008/23 05.06.2008<br />

(30) 30.11.2006 US 565170<br />

(54) • FLASH-SPEICHERPROGRAMM-SPERR-<br />

VERFAHREN<br />

• FLASH MEMORY PROGRAM INHIBIT<br />

SCHEME<br />

• PLAN D'INHIBITION DE PROGRAMME DE<br />

MÉMOIRE FLASH<br />

(71) MOSAID Technologies Incorporated, 11<br />

Hines Road, Suite 203, Ottawa, ON K2K 2X1,<br />

CA<br />

(72) KIM, Jin-Ki, Ottawa, Ontario K2K 3H6, CA<br />

(74) UEXKÜLL & STOLBERG, <strong>Patent</strong>anwälte<br />

Beselerstrasse 4, 22607 Hamburg, DE<br />

G11C 7/22 → (51) H03K 17/296<br />

(51) G11C 8/12 (11) 2 126 918 A1*<br />

G11C 29/26<br />

(25) En (26) En<br />

(21) 07855602.4 (22) 21.12.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

(86) CA 2007/002320 21.12.2007<br />

(87) WO 2008/077244 2008/27 03.07.2008<br />

(30) 22.12.2006 US 643850<br />

(54) • UNABHÄNGIGE VERBINDUNGS- UND<br />

BANKAUSWAHL<br />

• INDEPENDENT LINK AND BANK SELEC-<br />

TION<br />

• LIAISON INDÉPENDANTE ET SÉLECTION<br />

DE BLOC<br />

(71) Mosaid Technologies Incorporated, 11 Hines<br />

Road, Suite 203, Ottawa, ON K2K 2X1, CA<br />

(72) PYEON, Hong, Beom, Kanata, Ontario K2M<br />

2E1, CA<br />

OH, HakJune, Kanata, Ontario K2T 1J3, CA<br />

KIM, Jin-Ki, Kanata, Ontario K2K 3H6, CA<br />

(74) UEXKÜLL & STOLBERG, <strong>Patent</strong>anwälte<br />

Beselerstrasse 4, 22607 Hamburg, DE<br />

(51) G11C 11/00<br />

G06F 12/02<br />

(11) 2 126 919 A1*<br />

(25) En (26) En<br />

(21) 07865361.5 (22) 07.12.2007<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

(86) US 2007/086740 07.12.2007<br />

(87) WO 2008/091443 2008/31 31.07.2008<br />

(30) 22.01.2007 US 656578<br />

(54) • SPEICHERSYSTEM UND VERFAHREN MIT<br />

FLÜCHTIGEN UND NICHTFLÜCHTIGEN<br />

SPEICHERANORDNUNGEN AUF DERSEL-<br />

BEN HIERARCHISCHEN EBENE<br />

• MEMORY SYSTEM AND METHOD HAVING<br />

VOLATILE AND NON-VOLATILE MEMORY<br />

DEVICES AT SAME HIERARCHICAL LEVEL<br />

• PROCÉDÉ ET SYSTÈME DE MÉMOIRE<br />

COMPRENANT DES DISPOSITIFS DE<br />

MÉMOIRE VOLATILE ET NON VOLATILE<br />

SITUÉS AU MÊME NIVEAU HIÉRAR-<br />

CHIQUE<br />

(71) Micron Technology, Inc., 8000 S. Federal<br />

Way, Boise, ID 83716-9632, US<br />

(72) KLEIN, Dean, A., Eagle, Idaho 83616, US<br />

(74) Small, Gary James, et al, Carpmaels &<br />

Ransford 43-45 Bloomsbury Square, London<br />

WC1A 2RA, GB<br />

(51) G11C 11/00 (11) 2 126 920 A1*<br />

(25) En (26) En<br />

(21) 07838782.6 (22) 25.09.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

(86) US 2007/020647 25.09.2007<br />

(87) WO 2008/082443 2008/28 10.07.2008<br />

(30) 05.01.2007 US 620445<br />

(54) • SPEICHER-SPEICHERUNGSEINRICHTUN-<br />

GEN MIT VERSCHIEDENEN FERROMAG-<br />

NETISCHEN MATERIALSCHICHTEN UND<br />

HERSTELLUNGS- UND BENUTZUNGS-<br />

VERFAHREN DAFÜR<br />

• MEMORY STORAGE DEVICES COMPRIS-<br />

ING DIFFERENT FERROMAGNETIC MATE-<br />

RIAL LAYERS, AND METHODS OF<br />

MAKING AND USING THE SAME<br />

• DISPOSITIFS DE STOCKAGE DE MÉMOIRE<br />

COMPRENANT DIFFÉRENTES COUCHES<br />

DE MATÉRIAUX FERROMAGNÉTIQUES, ET<br />

PROCÉDÉS POUR LA FABRICATION ET<br />

L'UTILISATION DE CES DISPOSITIFS<br />

(71) International Business Machines Corporation,<br />

New Orchard Road, Armonk, NY 10504,<br />

US<br />

(72) DELIGIANNI, Hariklia, Tenafly, NJ 07670, US<br />

HUANG, Qiang, Ossining, NY 10562, US<br />

ROMANKIW, Lubomyr, T., Briarcliff Manor,<br />

NY 10510, US<br />

(74) Williams, Julian David, IBM United Kingdom<br />

Limited Intellectual Property Department<br />

Mail Point 110, Hursley Park Winchester<br />

Hampshire SO21 2JN, GB<br />

(51) G11C 11/00 (11) 2 126 921 A2*<br />

(25) En (26) En<br />

(21) 08780420.9 (22) 13.02.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(86) US 2008/053831 13.02.2008<br />

(87) WO 2008/118553 2008/40 02.10.2008<br />

(88) 11.12.2008<br />

(30) 23.02.2007 US 891246 P<br />

(54) • SEU-ABGEHÄRTETE STATISCHE RAM-<br />

ZELLE<br />

• SINGLE EVENT UPSET HARDENED STATIC<br />

RANDOM ACCESS MEMORY CELL<br />

• CELLULE DE MÉMOIRE À ACCÈS ALÉA-<br />

TOIRE STATIQUE DURCIE À PERTURBA-<br />

TION ISOLÉE (SEU)<br />

(71) BAE SYSTEMS Information and Electronic<br />

Systems Integration, Inc., 65 Spitbrook<br />

Road, Nashua, NH 03061, US<br />

335<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>49</strong>/<strong>2009</strong>) 02.12.<strong>2009</strong><br />

(72) LAWSON, David, C., Haymarket, VA 20169,<br />

US<br />

ROSS, Jason, F., Fairfax, VA 22030, US<br />

(74) BAE SYSTEMS plc Group IP Department,<br />

Lancaster House P.O. Box 87 Farnborough<br />

Aerospace Centre, Farnborough, Hampshire<br />

GU14 6YU, GB<br />

(51) G11C 11/16 (11) 2 126 922 A1*<br />

(25) En (26) En<br />

(21) 08731574.3 (22) 06.03.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(86) US 2008/056086 06.03.2008<br />

(87) WO 2008/109768 2008/37 12.09.2008<br />

(30) 06.03.2007 US 893217 P<br />

29.06.2007 US 770839<br />

(54) • STEUERUNG DER WORTZEILENTRANSIS-<br />

TORSTÄRKE ZUM LESEN UND SCHREI-<br />

BEN IN EINEM MAGNETORESISTIVEN<br />

STT-RAM<br />

• WORD LINE TRANSISTOR STRENGTH<br />

CONTROL FOR READ AND WRITE IN SPIN<br />

TRANSFER TORQUE MAGNETORESISTIVE<br />

RANDOM ACCESS MEMORY<br />

• COMMANDE DE PUISSANCE DE TRAN-<br />

SISTOR DE LIGNE DE MOTS POUR UNE<br />

LECTURE ET UNE ÉCRITURE DANS UNE<br />

MÉMOIRE VIVE MAGNÉTORÉSISTIVE À<br />

COUPLE DE TRANSFERT DE SPIN<br />

(71) QUALCOMM INCORPORATED, 5775 Morehouse<br />

Drive, San Diego, California 92121,<br />

US<br />

(72) YOON, Sei Seung, San Diego, California<br />

92121, US<br />

KANG, Seung H., San Diego, California<br />

92121, US<br />

SANI, Mehdi Hamidi, San Diego, California<br />

92121, US<br />

(74) Dunlop, Hugh Christopher, et al, R.G.C.<br />

Jenkins & Co 26 Caxton Street, London<br />

SW1H 0RJ, GB<br />

G11C 11/34 → (51) G11C 7/10<br />

G11C 11/34 → (51) H03K 17/296<br />

G11C 13/04 → (51) G02F 1/35<br />

G11C 15/00 → (51) A01H 1/00<br />

(51) G11C 16/02 (11) 2 126 923 A1*<br />

G06F 9/06 G11C 7/10<br />

(25) En (26) En<br />

(21) 08714608.0 (22) 14.02.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(86) CA 2008/000285 14.02.2008<br />

(87) WO 2008/098363 2008/34 21.08.2008<br />

(30) 16.02.2007 US 890252 P<br />

27.07.2007 US 829410<br />

(54) • NICHTFLÜCHTIGER SPEICHER MIT<br />

DYNAMISCHEM MULTIMODUS-BETRIEB<br />

• NON-VOLATILE MEMORY WITH DYNAMIC<br />

MULTI-MODE OPERATION<br />

• MÉMOIRE NON VOLATILE AVEC OPÉRA-<br />

TION MULTIMODE DYNAMIQUE<br />

(71) MOSAID Technologies Incorporated, 11<br />

Hines Road, Suite 203, Ottawa, ON K2K 2X1,<br />

CA<br />

(72) KIM, Jin-Ki, Ottawa, Ontario K2K 3H6, CA<br />

(74) UEXKÜLL & STOLBERG, <strong>Patent</strong>anwälte<br />

Beselerstrasse 4, 22607 Hamburg, DE<br />

G11C 16/02 → (51) H03K 17/296

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