Bulletin 2009/49 - European Patent Office
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Bulletin 2009/49 - European Patent Office

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(H01J) II.1(1)<br />

(87) WO 2003/050844 2003/25 19.06.2003<br />

(30) 12.12.2001 US 340878 P<br />

(54) • VERFAHREN ZUR MESSUNG VON<br />

ABSORBIERTEN UND ZWISCHENFLUIDEN<br />

• METHOD FOR MEASURING ADSORBED<br />

AND INTERSTITIAL FLUIDS<br />

• PROCEDE DE MESURE DE FLUIDES<br />

ADSORBES ET INTERSTITIELS<br />

(73) ExxonMobil Upstream Research Company,<br />

P.O. Box 2189, Houston, TX 77252-2189,<br />

US<br />

(72) SMITH, Michael, P., Tulsa, OK 74107, US<br />

POTTORF, Robert, J., Houston, TX 77024,<br />

US<br />

GRAY, Gary, G., Bellaire, TX 77401, US<br />

VITYK, Maxim, O., The Woodlands, TX<br />

77382, US<br />

(74) Troch, Geneviève, et al, ExxonMobil Chemical<br />

Europe Inc. P.O. Box 105, 1830 Machelen,<br />

BE<br />

(51) H01J 61/073 (11) 1 987 531 B1<br />

(25) De (26) De<br />

(21) 07726370.5 (22) 14.02.2007<br />

(84) BE DE FR HU NL<br />

(43) 05.11.2008<br />

(86) EP 2007/051414 14.02.2007<br />

(87) WO 2007/096277 2007/35 30.08.2007<br />

(30) 22.02.2006 DE 202006002833 U<br />

(54) • HOCHDRUCKENTLADUNGSLAMPE MIT<br />

KERAMISCHEM ENTLADUNGSGEFÄSS<br />

• HIGH-PRESSURE DISCHARGE LAMP<br />

HAVING A CERAMIC DISCHARGE VESSEL<br />

• LAMPE À DÉCHARGE À HAUTE PRESSION<br />

AVEC AMPOULE DE DÉCHARGE EN<br />

CÉRAMIQUE<br />

(73) Osram Gesellschaft mit beschränkter Haftung,<br />

Hellabrunner Strasse 1, 81543<br />

München, DE<br />

(72) TRYPKE, Dieter, 14612 Falkensee, DE<br />

GRASER, Wolfram, 80337 München, DE<br />

(51) H01J 61/34 (11) 2 002 462 B1<br />

H01K 1/34 H01J 5/48<br />

H01K 1/46<br />

(25) De (26) De<br />

(21) 07726541.1 (22) 28.02.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 17.12.2008<br />

(86) EP 2007/051905 28.02.2007<br />

(87) WO 2007/099124 2007/36 07.09.2007<br />

(30) 02.03.2006 DE 202006003314 U<br />

(54) • LAMPE MIT EINER EINBAULAMPE<br />

• LAMP WITH A BUILT-IN LAMP<br />

• LAMPE MUNIE D'UNE LAMPE ENCASTRÉE<br />

(73) Osram Gesellschaft mit beschränkter Haftung,<br />

Hellabrunner Strasse 1, 81543<br />

München, DE<br />

(72) STARK, Roland, 91809 Wellheim, DE<br />

H01J 61/34 → (51) H01J 9/38<br />

(51) H01J 61/36 (11) 2 020 018 B1<br />

H01J 61/82 C04B 37/00<br />

(25) De (26) De<br />

(21) 07729105.2 (22) 14.05.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

(43) 04.02.<strong>2009</strong><br />

(86) EP 2007/054653 14.05.2007<br />

(87) WO 2007/135012 2007/48 29.11.2007<br />

(30) 23.05.2006 DE 102006024238<br />

(54) • HOCHDRUCKENTLADUNGSLAMPE<br />

• HIGH-PRESSURE DISCHARGE LAMP<br />

• LAMPE À DÉCHARGE À HAUTE PRESSION<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(73) Osram Gesellschaft mit beschränkter Haftung,<br />

Hellabrunner Strasse 1, 81543<br />

München, DE<br />

(72) BRAUN, Paul, 86405 Meitingen, DE<br />

HÜTTINGER, Roland, 86916 Kaufering, DE<br />

STOCKWALD, Klaus, 82110 Germering, DE<br />

H01J 61/82 → (51) H01J 61/36<br />

H01K 1/34 → (51) H01J 61/34<br />

H01K 1/46 → (51) F21V 15/04<br />

H01K 1/46 → (51) H01J 61/34<br />

(51) H01L 21/00 (11) 1 848 025 B1<br />

H01L 21/687 B05B 7/00<br />

B05B 7/02 B08B 11/02<br />

B05C 11/02<br />

(25) En (26) En<br />

(21) 07007786.2 (22) 17.04.2007<br />

(84) AT BE DE FR<br />

(43) 24.10.2007<br />

(30) 18.04.2006 JP 200611<strong>49</strong>60<br />

(54) • Flüssigkeitsverarbeitungsvorrichtung<br />

• Liquid processing apparatus<br />

• Appareil de traitement de liquides<br />

(73) TOKYO ELECTRON LIMITED, 3-6 Akasaka 5chome,<br />

Minato-ku Tokyo 107-8481, JP<br />

(72) Kaneko, Satoshi, Koshi-shi Kumamoto 861-<br />

1116, JP<br />

Matsumoto, Kazuhisa, Koshi-shi Kumamoto<br />

861-1116, JP<br />

Ito, Norihiro, Koshi-shi Kumamoto 861-<br />

1116, JP<br />

Akimoto, Masami, Koshi-shi Kumamoto 861-<br />

1116, JP<br />

Toshima, Takayuki, Koshi-shi Kumamoto<br />

861-1116, JP<br />

Nanba, Hiromitsu, Koshi-shi Kumamoto 861-<br />

1116, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastrasse 4, 81925 München, DE<br />

H01L 21/00 → (51) G01B 11/06<br />

(51) H01L 21/027 (11) 1 798 758 B1<br />

G02B 19/00 G03F 7/20<br />

(25) Ja (26) En<br />

(21) 05768370.8 (22) 03.08.2005<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 20.06.2007<br />

(86) JP 2005/014166 03.08.2005<br />

(87) WO 2006/018972 2006/08 23.02.2006<br />

(30) 17.08.2004 JP 2004236913<br />

(54) • Beleuchtungsapparat, Methode zur Justierung<br />

des Beleuchtungsapparats, Belichtungssystem<br />

und Belichtungsverfahren<br />

• Illumination optical apparatus, method of<br />

adjusting the illumination optical apparatus,<br />

exposure system and method<br />

• Dispositif optique d'illumination, procédé<br />

de réglage d'un dispositif optique d'illumination,<br />

système d'exposition et procédé<br />

d'exposition<br />

(73) NIKON CORPORATION, 2-3, Marunouchi 3chome,<br />

Chiyoda-Ku, Tokyo 100-8331, JP<br />

(72) TANAKA, Hirohisa, NIKON CORPORATION,<br />

Tokyo, 100-8331, JP<br />

SHIGEMATSU, Koji, NIKON CORPORATION,<br />

Tokyo 100-8331, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastrasse 4, 81925 München, DE<br />

H01L 21/28 → (51) H01L 21/311<br />

938<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>49</strong>/<strong>2009</strong>) 02.12.<strong>2009</strong><br />

H01L 21/302 → (51) H01L 21/306<br />

(51) H01L 21/306 (11) 1 755 156 B1<br />

H01L 21/302<br />

(25) En (26) En<br />

(21) 06016964.6 (22) 14.08.2006<br />

(84) DE<br />

(43) 21.02.2007<br />

(30) 17.08.2005 JP 2005236255<br />

(54) • Verfahren zur Herstellung von Siliziumscheiben<br />

• Process for producing silicon wafers<br />

• Procédé de fabrication de plaquettes de<br />

silicium<br />

(73) SUMCO CORPORATION, 2-1, Shibaura 1chome,<br />

Minato-ku, Tokyo, JP<br />

(72) Koyata, Sakae, Minato-ku Tokyo, JP<br />

Hashii, Tomohiro, Minato-ku Tokyo, JP<br />

Murayama, Katsuhiko, Minato-ku Tokyo, JP<br />

Takaishi, Kazushige, Minato-ku Tokyo, JP<br />

Katoh, Takeo, Minato-ku Tokyo, JP<br />

(74) Albrecht, Thomas, et al, Kraus & Weisert<br />

<strong>Patent</strong>- und Rechtsanwälte Thomas-Wimmer-Ring<br />

15, 80539 München, DE<br />

(51) H01L 21/311 (11) 1 503 404 B1<br />

H01L 21/28<br />

(25) En (26) En<br />

(21) 04017471.6 (22) 23.07.2004<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IT LI LU MC NL PL PT RO SE SI SK<br />

TR<br />

(43) 02.02.2005<br />

(30) 01.08.2003 US 632470<br />

(54) • Präzise Strukturierung von Schichten mit<br />

hoher Dielektrizitätskonstante<br />

• Precise patterning of high-k films<br />

• Formation précise de motifs dans des films<br />

à constante diélectrique élevée<br />

(73) Intel Corporation, 2200 Mission College<br />

Boulevard, Santa Clara, CA 95052, US<br />

(72) Brask, Justin K., Portland Oregon 97229, US<br />

Doczy, Mark L., Beaverton Oregon 97006,<br />

US<br />

Metz, Matthew V., Hillsboro Oregon 97124,<br />

US<br />

Barnak, John, Beaverton Oregon 97007, US<br />

Markworth, Paul R., Hillsboro Oregon 97123,<br />

US<br />

(74) Goddar, Heinz J., Forrester & Boehmert<br />

Pettenkoferstrasse 20-22, 80336 München,<br />

DE<br />

(51) H01L 21/329 (11) 1 415 334 B1<br />

(25) En (26) En<br />

(21) 02745754.8 (22) 24.07.2002<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR IE IT LI LU MC NL PT SE SK TR<br />

(43) 06.05.2004<br />

(86) IB 2002/002892 24.07.2002<br />

(87) WO 2003/010812 2003/06 06.02.2003<br />

(30) 24.07.2001 GB 0118000<br />

(54) • HERSTELLUNG VON HALBLEITERANORD-<br />

NUNGEN MIT SCHOTTKY SPERRSCHICH-<br />

TEN<br />

• MANUFACTURE OF SEMICONDUCTOR<br />

DEVICES WITH SCHOTTKY BARRIERS<br />

• FABRICATION DE DISPOSITIFS A SEMI-<br />

CONDUCTEURS A BARRIERES DE<br />

SCHOTTKY<br />

(73) NXP B.V., High Tech Campus 60, 5656 AG<br />

Eindhoven, NL<br />

(72) GROVER, Raymond, J., NL-5656 AA Eindhoven,<br />

NL<br />

PEAKE, Steven, T., NL-5656 AA Eindhoven,<br />

NL

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