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Bulletin 2009/49 - European Patent Office

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(H01L) I.1(1)<br />

(71) In-Solar Tech Co., Ltd., 19th Team, Business<br />

Incubator Chung-Ang University 221, Heukseok-dong,<br />

Dongjak-gu Seoul 156-756, KR<br />

(72) CHOI, In-hwan, Seoul 135-506, KR<br />

(74) Kling, Simone, et al, Cabinet Lavoix Theresienstrasse<br />

6-8, 80333 München, DE<br />

H01L 21/205 → (51) H01L 21/20<br />

(51) H01L 21/208 (11) 2 126 965 A2*<br />

H01L 21/368<br />

(25) En (26) En<br />

(21) 07874<strong>49</strong>8.4 (22) 13.12.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

(86) US 2007/025518 13.12.2007<br />

(87) WO 2008/130396 2008/44 30.10.2008<br />

(88) 09.04.<strong>2009</strong><br />

(30) 29.01.2007 US 668041<br />

(54) • DOTIERTE NANOPARTIKEL-HALBLEITER-<br />

LADUNGSTRANSPORTSCHICHT<br />

• DOPED NANOPARTICLE SEMICONDUC-<br />

TOR CHARGE TRANSPORT LAYER<br />

• COUCHE DE TRANSPORT DE CHARGES<br />

SEMI-CONDUCTRICE À NANOPARTICU-<br />

LES DOPÉES<br />

(71) Eastman Kodak Company, 343 State Street,<br />

Rochester, NY 14650-2201, US<br />

(72) KAHEN, Keith Brian, Rochester, New York<br />

14616, US<br />

(74) Weber, Etienne Nicolas, Kodak Etablissement<br />

de Chalon Campus Industriel - Département<br />

Brevets Route de Demigny - Z.I. Nord - B.P.<br />

21, 71102 Chalon sur Saône Cedex, FR<br />

(51) H01L 21/28 (11) 2 126 966 A1*<br />

H01L 29/786 H01L 29/51<br />

H01L 29/<strong>49</strong><br />

(25) En (26) En<br />

(21) 08710970.8 (22) 04.02.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(86) JP 2008/052091 04.02.2008<br />

(87) WO 2008/102651 2008/35 28.08.2008<br />

(30) 19.02.2007 JP 2007037994<br />

(54) • AMORPHER ISOLATIONSFILM UND<br />

DÜNNFILMTRANSISTOR<br />

• AMORPHOUS INSULATOR FILM AND<br />

THIN-FILM TRANSISTOR<br />

• FILM ISOLANT AMORPHE ET TRANSIS-<br />

TOR EN COUCHES MINCES<br />

(71) Canon Kabushiki Kaisha, 30-2 Shimomaruko<br />

3-chome Ohta-ku, Tokyo 146-8501, JP<br />

(72) YABUTA, Hisato, Tokyo 146-8501, JP<br />

KAJI, Nobuyuki, Tokyo 146-8501, JP<br />

HAYASHI, Ryo, Tokyo 146-8501, JP<br />

(74) Weser, Wolfgang, et al, Weser & Kollegen<br />

<strong>Patent</strong>anwälte Radeckestraße 43, D-81245<br />

München, DE<br />

(51) H01L 21/306 (11) 2 126 967 A2*<br />

(25) De (26) De<br />

(21) 08706778.1 (22) 22.01.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(86) DE 2008/000099 22.01.2008<br />

(87) WO 2008/089733 2008/31 31.07.2008<br />

(88) 08.01.<strong>2009</strong><br />

(30) 22.01.2007 DE 102007004060<br />

(54) • ÄTZLÖSUNG UND ÄTZVERFAHREN<br />

• ETCHING SOLUTION AND ETCHING<br />

METHOD<br />

• SOLUTION DE GRAVURE ET PROCÉDÉ DE<br />

GRAVURE<br />

(71) GP Solar GmbH, Turmstrasse 22, 78467<br />

Konstanz, DE<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(72) FATH, Peter, 78464 Konstanz, DE<br />

MELNYK, Ihor, 78465 Konstanz, DE<br />

(74) Heyerhoff, Markus, Heyerhoff & Geiger<br />

<strong>Patent</strong>anwälte Heiligenbreite 52, 88662<br />

Überlingen, DE<br />

H01L 21/336 → (51) H01L 21/8242<br />

H01L 21/368 → (51) H01L 21/208<br />

(51) H01L 21/48 (11) 2 126 968 A1*<br />

H01L 23/538 H01L 23/58<br />

H01L 25/10<br />

(25) En (26) En<br />

(21) 08739382.3 (22) 25.03.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(86) JP 2008/056265 25.03.2008<br />

(87) WO 2008/123481 2008/42 16.10.2008<br />

(30) 29.03.2007 JP 2007087662<br />

(54) • HALBLEITERVORRICHTUNG MIT EINEM<br />

SCHALTUNGSSUBTRAT MIT INSPEK-<br />

TIONSANSCHLUSSPLÄTZEN SOWIE VER-<br />

FAHREN ZU IHRER HERSTELLUNG<br />

• SEMICONDUCTOR DEVICE COMPRISING<br />

CIRCUIT SUBSTRATE WITH INSPECTION<br />

CONNECTION PADS AND MANUFACTUR-<br />

ING METHOD THEREOF<br />

• DISPOSITIF À SEMI-CONDUCTEURS<br />

COMPRENANT UN SUBSTRAT DE CIRCUIT<br />

À PLAGES DE CONNEXION D'INSPECTION<br />

ET PROCÉDÉ DE FABRICATION DUDIT<br />

DISPOSITIF<br />

(71) Casio Computer Co., Ltd., 6-2, Hon-machi 1chome<br />

Shibuya-ku, Tokyo 151-8543, JP<br />

(72) NEGISHI, Yuji, Hamura-shi, Tokyo 205-8555,<br />

JP<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser<br />

Anwaltssozietät, Leopoldstrasse 4,<br />

80802 München, DE<br />

H01L 21/56 → (51) H01L 23/31<br />

(51) H01L 21/60 (11) 2 126 969 A1*<br />

H01L 23/48 H01L 25/065<br />

H01L 21/98<br />

(25) Fr (26) Fr<br />

(21) 08708288.9 (22) 28.01.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(86) EP 2008/050970 28.01.2008<br />

(87) WO 2008/095811 2008/33 14.08.2008<br />

(30) 30.01.2007 FR 0700625<br />

(54) • VERFAHREN ZUR VERBINDUNG ELEK-<br />

TRONISCHER WAFER<br />

• METHOD OF INTERCONNECTING ELEC-<br />

TRONIC WAFERS<br />

• PROCEDE D'INTERCONNEXION DE TRAN-<br />

CHES ELECTRONIQUES<br />

(71) 3D Plus, 641 Rue Hélène Boucher, Z.I.,<br />

78532 Buc Cedex, FR<br />

(72) VAL, Christian, F-78470 St Remy Les<br />

Chevreuse, FR<br />

(74) Henriot, Marie-Pierre, et al, Marks & Clerk<br />

France Conseils en Propriété Industrielle<br />

Immeuble " Visium " 22, avenue Aristide<br />

Briand, 94117 Arcueil Cedex, FR<br />

H01L 21/822 → (51) H01P 1/15<br />

(51) H01L 21/8242 (11) 2 126 970 A2*<br />

H01L 27/108 H01L 21/336<br />

(25) En (26) En<br />

(21) 08724673.2 (22) 22.01.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

341<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>49</strong>/<strong>2009</strong>) 02.12.<strong>2009</strong><br />

(86) US 2008/000785 22.01.2008<br />

(87) WO 2008/091579 2008/31 31.07.2008<br />

(88) 15.01.<strong>2009</strong><br />

(30) 22.01.2007 US 656125<br />

(54) • SPEICHER MIT VERTIKALER ZUGANGS-<br />

VORRICHTUNG<br />

• MEMORY HAVING A VERTICAL ACCESS<br />

DEVICE<br />

• MÉMOIRE COMPRENANT UN DISPOSITIF<br />

D'ACCÈS VERTICAL<br />

(71) Micron Technology, Inc., 8000 S. Federal<br />

Way, Boise, ID 83716-9632, US<br />

(72) JUENGLING, Werner, Boise, Idaho 83716,<br />

US<br />

(74) Collins, John David, Marks & Clerk LLP 90<br />

Long Acre, London WC2E 9RA, GB<br />

H01L 21/98 → (51) H01L 21/60<br />

(51) H01L 23/31 (11) 2 126 971 A1*<br />

H01L 21/56<br />

(25) En (26) En<br />

(21) 08713435.9 (22) 03.01.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(86) US 2008/050078 03.01.2008<br />

(87) WO 2008/091717 2008/31 31.07.2008<br />

(30) 25.01.2007 US 627041<br />

(54) • CSP-VERPACKUNGSKONZEPT AUF<br />

WAFEREBENE<br />

• WAFER LEVEL CSP PACKAGING CONCEPT<br />

• CONCEPT D'EMBALLAGE DE BOÎTIER CSP<br />

AU NIVEAU DE LA PLAQUETTE<br />

(71) Analog Devices, Inc., One Technology Way,<br />

Norwood, MA 02062-9106, US<br />

(72) O'DONNELL, Alan, Casteltroy, Co. Limerick,<br />

IE<br />

KIERSE, Oliver, Killaloe, County Clare, IE<br />

GOIDA, Thomas, M., Wiindham, NH 03087,<br />

US<br />

(74) Beck, Simon Antony, Withers & Rogers LLP<br />

Goldings House 2 Hays Lane, London SE1<br />

2HW, GB<br />

H01L 23/48 → (51) H01L 21/60<br />

H01L 23/538 → (51) H01L 21/48<br />

H01L 23/58 → (51) H01L 21/48<br />

H01L 25/065 → (51) H01L 21/60<br />

H01L 25/075 → (51) H01L 33/00<br />

H01L 25/10 → (51) H01L 21/48<br />

(51) H01L 27/02 (11) 2 126 972 A1*<br />

(25) De (26) De<br />

(21) 08706748.4 (22) 11.01.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(86) DE 2008/000047 11.01.2008<br />

(87) WO 2008/086776 2008/30 24.07.2008<br />

(30) 19.01.2007 DE 102007002820<br />

(54) • VERFAHREN ZUR SELBSTÜBERWACHUNG<br />

DES DURCHBRUCHS IN HALBLEITER-<br />

BAUTEILEN SOWIE DAFÜR AUSGEBILDE-<br />

TES HALBLEITERBAUTEIL<br />

• METHOD FOR SELF-MONITORING THE<br />

BREAKDOWN IN SEMICONDUCTOR COM-<br />

PONENTS AND SEMICONDUCTOR COM-<br />

PONENT ADAPTED THERETO<br />

• PROCÉDÉ D'AUTO-SURVEILLANCE DE LA<br />

RUPTURE DE COMPOSANTS À SEMI-<br />

CONDUCTEUR ET COMPOSANT À SEMI-<br />

CONDUCTEUR CONÇU À CET EFFET

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