characterization, modeling, and design of esd protection circuits

4.3. Device Failure Results 131
(a)
P t2 / Watts
(b)
12
10
8
6
4
2
0 0 100 200 300 400 500
12
10
8
6
4
2
0
t 2 / ns
Fig. 4.52 Power at second breakdown, Pt2 , vs. time to breakdown, t2 , for a
25 ⁄ 0.75µm structure plotted on linear (a) and semi-log (b) scales.
Experimental results (points) are extracted from TLP experiments using
various pulse lengths, while simulation points (line) are taken from
simulations with varying pulse heights of indefinite width.
600
10 100 1000