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characterization, modeling, and design of esd protection circuits

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58 Chapter 3. Simulation: Methods <strong>and</strong> Applications<br />

To create thermal boundary conditions, thermal electrodes are placed anywhere along the<br />

edges <strong>of</strong> a device in the same manner as electrical contacts <strong>and</strong> act as infinite heat sinks by<br />

enforcing a constant temperature at the contact (Dirichlet boundary conditions). Noncontacted<br />

edges obey homogeneous Neumann boundary conditions, i.e., there is no heat<br />

flow across non-contacted edges. Lumped linear thermal resistance, in K/W, <strong>and</strong><br />

capacitance, in J/K, may be placed on a thermal contact to simulate the conduction <strong>of</strong> heat<br />

away from the part <strong>of</strong> the device defined by the simulation. For example, a lumped<br />

resistance may be placed on a thermal contact along the bottom <strong>of</strong> a structure to simulate<br />

the dissipation <strong>of</strong> heat into the substrate.<br />

3.1.1 Mobility <strong>and</strong> Impact Ionization Models<br />

Since the lattice temperature is no longer constant throughout a simulated device, the<br />

mobility <strong>and</strong> impact-ionization models must be dependent upon the local temperature. The<br />

Lombardi surface mobility model [47] is chosen for low-field <strong>and</strong> transverse field mobility<br />

<strong>modeling</strong> because it accounts for parallel <strong>and</strong> perpendicular fields needed to simulate<br />

MOSFETs <strong>and</strong> because it includes lattice-temperature dependence. It is a semi-empirical<br />

model with separate terms which account for surface-roughness scattering,<br />

surface acoustical-phonon scattering,<br />

<strong>and</strong> bulk mobility,<br />

µ ac<br />

=<br />

µ sr<br />

DN<br />

= -------- , (3.21)<br />

2<br />

E⊥ BN CN N<br />

------- , (3.22)<br />

E⊥ ⋅ total<br />

+ --------------------------<br />

T3E⊥ µ b ≠<br />

function ( T E ) , (3.23)<br />

where Ntotal is the local total doping concentration, T is the local temperature, E⊥ is the<br />

local electric field perpendicular to carrier flow, <strong>and</strong> BN, CN, DN, <strong>and</strong> EN are coefficients<br />

with different values for electrons <strong>and</strong> holes. These mobility terms are added in parallel to<br />

calculate the overall mobility (Mathiessens’s rule) at each point in the simulation space.<br />

Other mobility models are available which account for transverse-field <strong>and</strong>/or temperature<br />

effects, but the Lombardi formulation was judged to be the only model which treats both<br />

EN<br />

, ⊥

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