characterization, modeling, and design of esd protection circuits

3.6. Extraction of MOSFET Pf vs. tf Curve 81
log 10 (1 / (∆T / K))
∆T / K
2
0
-2
-4
−14
900
600
300
0
−14
b/c = 40µm / 2µm
Eq. (3.37)
P´/κ = 3.38X10 4 K
D = 0.354 cm 2 /sec
b/c = 10µm / 0.25µm
b/c = 10µm / 2µm
−12 −10 −8 −6 −4 −2 0
log10 (time / sec)
b/c = 10µm / 2µm
Eq. (3.37)
b/c = 40µm / 2µm
b/c = 10µm / 0.25µm
−12 −10 −8 −6 −4 −2 0
log10 (time / sec)
Fig. 3.32 Simulated 1/∆T vs. time (a) and ∆T vs. time (b) curves for various length/
width ratios in a uniformly doped semiconductor region with a constant
applied power. The temperature on the perimeter of the rectangular
device is fixed at 300K. Eq. (3.37), the analytic approximation, is plotted
for the 10µm X 2µm structure.