Suprem III - Stanford Technology CAD Home Page

-104-
Suprem-III User´s Manual
41. Silicon Statement
--------------------------
material.
The SILICON statement is used to input or modify the characteristics of single crystal silicon as a layer
SILICON
[ NAME= ] [ DX.DEFAU= ]
[ SEMICOND ]
[ SPECIES= ] [ DENSITY= ]
[ AT.WT.1= ] [ AT.NUM.1= ] [ ABUND.1= ]
[ NI.0= ] [ NI.E= ] [ NI.F= ] [ DEFECTLN= ]
[ OEDK.0= ] [ OEDK.E= ] [ OED.RATE= ]
[ 100.OEDF= ] [ 110.OEDF= ] [ 111.OEDF= ]
[ AFFINITY= ] [ EPSILONF= ]
[ N.VALENC= ] [ N.CONDUC= ] [ BAND.GAP= ]
[ K.M= ]
Name Type Description
---- ---- -----------
ABUND.1 Num The relative abundance of element one in the material. The sum of all
abundances for a material must equal one.
(unit: )
(default: the current value.)
(synonym: )
AFFINITY Num The electron affinity of the material.
(unit: electron volts.)
(default: the current value.)
(synonym: )
AT .NUM.1 Num The atomic number of element one in the material.
(unit: )
(default: the current value.)
(synonym: )
AT .WT.1 Num The atomic weight of element one in the material.
(unit: amu)
(default: the current value.)
(synonym: )
BAND.GAP Num The band gap of the material.
(unit: electron volts.)
(default: the current value.)
(synonym: )
DEFECTLN Num The decay length of point defects in the material.
(unit: microns)
(default: the current value.)
(synonym: )