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Suprem-III User´s Manual
being deposited, otherwise, the default dx of the deposited material.)
(synonym: )
GRAINSIZ Num The as-deposited grain size of the deposited polysilicon layer.
(unit: microns.)
(default: calculated from the deposition temperature and pressure.)
(synonym: )
MIN.DX Num The minimum grid spacing that can be used in the layer on which the layer
is to be deposited.
(unit: microns.)
(default: the last value specified.)
(synonym: )
NITRIDE Log Specifies that the material to be deposited is silicon nitride.
(unit: )
(default: false.)
(synonym: )
OXIDE Log Specifies that the material to be deposited is silicon dioxide.
(unit: )
(default: false.)
(synonym: )
PHOSPHOR Log Specifies that the deposited material is to be uniformly doped with phosphorus.
(unit: )
(default: false.)
(synonym: )
POLYSILI Log Specifies that the material to be deposited is poly-crystalline silicon.
(unit: )
(default: false.)
(synonym: )
PRESSURE Num The pressure during the deposition of a polysilicon layer.
(unit: atmospheres.)
(default: 1.0)
(synonym: )
SILICON Log Specifies that the material to be deposited is single crystal silicon.
(unit: )
(default: false.)
(synonym: )
SPACES Num The number of spaces to be used in the deposited layer.
(unit: )
(default: thickness/dx.)
(synonym: )
TEMPERAT Num The temperature during deposition of a polysilicon layer.
(unit: )
(default: degrees Centigrade.)
(synonym: )
THICKNES Num The thickness of the deposited layer.
(unit: microns.)
(default: )
(synonym: )