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Suprem-III User´s Manual
GBE.0 Num The pre-exponential constant used in calculating the grain-boundary energy
(unit: )
(default: the current value.)
(synonym: )
GBE.E Num The activation energy used in calculating the grain-boundary energy.
(unit: electron volts.)
(default: the current value.)
(synonym: )
GEO.FACT Num A geometric factor used in calculating the grain growth driving force, F.
(unit: )
(default: the current value.)
(synonym: )
GSZ.H.0 Num The pre-exponential constant used in calculating the ‘as deposited’
polysilicon grain size for pressures near one atmosphere.
(unit: microns.)
(default: the current value.)
(synonym: )
GSZ.H.E Num The activation energy used in calculating the ‘as deposited’ polysilicon
grain size for pressures near one atmosphere.
(unit: electron volts.)
(default: the current value.)
(synonym: )
GSZ.L.0 Num The pre-exponential constant used in calculating the ‘as deposited’
polysilicon grain size for low pressure CVD.
(unit: microns.)
(default: the current value.)
(synonym: )
GSZ.L.E Num The activation energy used in calculating the ‘as deposited’ polysilicon
grain size for low pressure CVD.
(unit: electron volts.)
(default: the current value.)
(synonym: )
INDEX Num The material index of the material being modified. This number is used
internally in the program to identify the material and point to its parameters.
(unit: )
(default: )
(synonym: )
INSULATO Log Specifies that the material is an insulator.
(unit: )
(default: false.)
(synonym: )
K.M Num Used in R. Reif’s epitaxial growth model (see reference in EPITAXY
statement). K.m is the mass transport coefficient for silane in hydrogen.
(unit: microns/minute/atmosphere)
(default: the current value)
(synonym: )