Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
DTMIN Num The smallest time increment to be used during the solution.<br />
(unit: minutes.)<br />
(default: 0.005)<br />
(synonym: )<br />
GROWTH.R Num The growth rate of the epitaxial layer.<br />
(unit: microns/minute.)<br />
(default: )<br />
(synonym: )<br />
PHOSPHOR Log Specifies that the impurity in the ambient gas is phosphorus.<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
PP.DOPAN Num Specifies the input dopant partial pressure. This is approximately equal<br />
to the dopant input flow rate divided by the hydrogen carrier input flow<br />
rate. See the R. Reif reference below.<br />
(unit: atmospheres)<br />
(default: 0.0)<br />
(synonym: )<br />
PP.SILAN Num Specifies the input silane partial pressure. This is approximately equal to<br />
the silane input flow rate divided by the hydrogen carrier input flow<br />
rate. See the R. Reif reference below.<br />
(unit: atmospheres)<br />
(default: 0.0)<br />
(synonym: )<br />
REL.ERR Num Specifies the maximum desired relative truncation error. Used to control<br />
the time step as described below.<br />
(unit: )<br />
(default: 0.5)<br />
(synonym: )<br />
TEMPERAT Num The temperature at the beginning of the step.<br />
(unit: degrees Centigrade.)<br />
(default: )<br />
(synonym: )<br />
TIME Num The total elapsed time of the epitaxy step being simulated.<br />
(unit: minutes.)<br />
(default: )<br />
(synonym: )<br />
The EPITAXY statement is used to grow a layer of single crystal silicon on top of the current structure.<br />
The epitaxial layer may be either doped or undoped. To grow an epitaxial layer, the top layer must be single crystal<br />
silicon.<br />
The growth rate used in the simulation may be specified in one of two ways. The first is to explicitly specify<br />
it with the GROWTH.R parameter. The second is to specify the input partial pressure of silane with the<br />
PP.SILAN parameter causing the rate to be determined from the product of the partial pressure and the mass transport<br />
coefficient of silane in hydrogen as specified by the SILICON statement. (Reference, ‘Computer Simulation in<br />
Silicon Epitaxy’, by R. Reif and R. W. Dutton, J. Electrochem. Soc., Vol. 128, No. 4, April 1981, pp 909-918.)<br />
Analogous to the growth rate, the impurity concentration in doped epi-layers may be specified in one of<br />
two ways. The first is to explicitly specify the surface concentration with the CONCENTR parameter. The second
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