Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
layer material type thickness dx dxmin top bottom orientation<br />
no.<br />
(microns) (microns) node node or grain size<br />
2 OXIDE 1.2687 0.0100 0.0010 407 424<br />
1 SILICON 4.6418 0.0300 0.0010 425 500 <br />
Integrated Dopant<br />
layer Net Total<br />
no. active chemical active chemical<br />
2 0.0000e+00 -1.1853e+14 0.0000e+00 1.1880e+14<br />
1 -4.7368e+12 -4.7368e+12 5.1778e+12 5.1778e+12<br />
sum -4.7368e+12 -1.2326e+14 5.1778e+12 1.2398e+14<br />
Integrated Dopant<br />
layer ARSENIC ANTIMONY<br />
no. active chemical active chemical<br />
2 0.0000e+00 1.3770e+11 0.0000e+00 3.9708e-01<br />
1 2.2046e+11 2.2046e+11 1.9365e+01 1.9365e+01<br />
sum 2.2046e+11 3.5816e+11 1.9365e+01 1.9762e+01<br />
Integrated Dopant<br />
layer BORON<br />
no. active chemical<br />
2 0.0000e+00 1.1866e+14<br />
1 4.9573e+12 4.9573e+12<br />
sum 4.9573e+12 1.2362e+14<br />
Junction Depths and Integrated Dopant<br />
Concentrations for Each Diffused Region<br />
layer region type junction depth net total<br />
no. no. (microns) active Qd chemical Qd<br />
2 1 p 0.0000 0.0000e+00 1.1880e+14<br />
1 1 p 0.0000 4.7368e+12 5.1778e+12<br />
Save the final isolation region simulation.<br />
End <strong>Suprem</strong>-<strong>III</strong>
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