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Suprem-III User´s Manual
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*** Suprem-III ***
*** version 1B rev. 8628 ***
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Tue Oct 27 16:38:59 1987
Commands input from file: s3ex2e.in
1... Title Suprem-III Example 2. Bipolar Poly doped emitter.
2... $ Final isolation region formation.
3... $ File s3ex2e.
4... Comment Start with the result of S3EX2D.
5... Initialize Structure=s3e2ds Thickness=6
6... Comment Etch the nitride and oxide layers.
7... Etch Nitride
8... Etch Oxide
9... Comment Etch half the silicon epi layer.
10... Etch Silicon Amount=.8
11... Comment Implant boron in the field region.
12... Implant Boron Dose=2E13 Energy=100
13... Comment Grow the field oxide.
14... Diffusion Temperature=800 Time=30 T.Rate=10
15... Diffusion Temperature=1100 Time=15 DryO2
16... Diffusion Temperature=1100 Time=210 WetO2
17... Diffusion Temperature=1100 Time=15 DryO2
18... Diffusion Temperature=1100 Time=10 T.Rate=-30
19... Print Layer
20... Comment Implant the boron base.
21... Implant Boron Dose=1E14 Energy=80
22... Comment Deposit arsenic doped polysilicon for the emitter contact.
23... Deposit Polysilicon, Thickness=.5 Temperature=620.
... + Arsenic Concentration=1E20
24... Comment Remove the polysilicon.
25... Etch Polysilicon
26... Comment Anneal to activate base and emitter regions.
27... Diffusion Temperature=1000 Time=20 WetO2
28... Comment Plot the electrically active impurity distributions.
29... Print Layer
30... Plot Active Boron Xmax=5 Clear ˆAxis Linetype=2
31... Plot Active Arsenic Xmax=5 ˆClear ˆAxis Linetype=4
32... Plot Active Antimony Xmax=5 ˆClear ˆAxis Linetype=5
33... Plot Active Net Xmax=5 ˆClear Axis Linetype=1
34... Comment Save the final isolation region simulation.
35... Savefile Structure File=s3e2es