Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
XDX Num The distance from the surface of the layer at which the nominal grid<br />
spacing, DX, applies.<br />
(unit: microns.)<br />
(default: 0.)<br />
(synonym: )<br />
Log Specifies that the crystalline orientation of the deposited silicon is .<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
Log Specifies that the crystalline orientation of the deposited silicon is .<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
Log Specifies that the crystalline orientation of the deposited silicon is .<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
The DEPOSITION statement is used to deposit a given thickness of the specified material on top of the existing<br />
structure. The material deposited may be either undoped or doped uniformly with one of the available impurity<br />
types. If the material to be deposited is of the same type as is already present in the top layer of the structure, then<br />
the material is added to the existing top layer. If the top layer material is of a different type than that being deposited,<br />
then a new layer is created for the deposited material.<br />
If single crystal silicon is being deposited, then the crystalline orientation must also be specified. If<br />
polysilicon is being deposited, then the deposition temperature must also be specified. The resulting polysilicon<br />
grain size will be calculated from the deposition temperature and pressure unless overridden by the user via the<br />
GRAINSIZE parameters.
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