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Suprem-III User´s Manual
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*** Suprem-III ***
*** version 1B rev. 8628 ***
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Tue Oct 27 15:53:35 1987
Commands input from file: s3ex1c.in
1... Title SUPREM-III Example 1. NMOS Silicon Gate
2... Comment Source/drain regions.
3... $ File s3ex1c
4... Comment Initialize silicon substrate.
5... Initialize Structure=s3e1as
6... Comment Etch polysilicon and oxide over source/drain regions.
7... Etch Polysilicon
8... Etch Oxide
9... Comment Implant Arsenic for source/drain regions.
10... Implant Arsenic Dose=5E15 Energy=150
11... Comment Drive-in Arsenic and re-oxidize source/drain regions.
12... Diffusion Temperature=1000 Time=30 DryO2
13... Comment Etch contact holes to gate, source, and drain regions.
14... Etch oxide
15... Comment Deposit Phosphorus doped SiO2 using CVD.
16... Deposit Oxide Thickness=.7500 Phosphorus Concentration=1e21
17... Comment Increase the diffusivity of phosphorus in oxide by
18... $ two orders of magnitude.
19... Phosphorus Oxide Dix.0=4.56E7
20... Comment Reflow glass to smooth surface and dope contact holes.
21... Diffusion Temperature=1000 Time=30
22... Print Layer
23... Comment Reopen contact holes.
24... Etch Oxide
25... Comment Deposit Aluminum.
26... Deposit Aluminum Thickness=1.2 Spaces=10
27... Comment Plot the chemical impurity distributions at this point.
28... Print Layer
29... Plot Chemical Boron Xmax=2.5 Clear ˆAxis Linetype=2
30... Plot Chemical Arsenic Xmax=2.5 ˆClear ˆAxis Linetype=3
31... Plot Chemical Phosphorus Xmax=2.5 ˆClear ˆAxis Linetype=6
32... Plot Chemical Net Xmax=2.5 ˆClear Axis
33... Comment Save the structure.
34... Save Structure File=s3e1cs
35... Stop End of SUPREM-III Example 1.