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Suprem-III User´s Manual
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*** Suprem-III ***
*** version 1B rev. 8628 ***
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Tue Oct 27 16:31:39 1987
Commands input from file: s3ex2b.in
1... Title Suprem-III Example 2. Bipolar Poly doped emitter.
2... $ Final active device region formation.
3... $ File s3ex2b
4... Comment Start from the result of s3ex2a.
5... Initialize Structure=s3e2as
6... Comment Field oxide growth. Oxidation is masked by nitride.
7... Diffusion Temperature=800 Time=30 t.rate=10
8... Diffusion Temperature=1000 Time=15 DryO2
9... Diffusion Temperature=1100 Time=210 WetO2
10... Diffusion Temperature=1100 Time=15 DryO2
11... Diffusion Temperature=1100 Time=10 t.rate=-30
12... Print Layer
13... Plot Net Chemical Xmax=5
14... Comment Etch the oxide and nitride layers.
15... Etch Oxide
16... Etch Nitride
17... Etch Oxide
18... Comment Move the fine grid to the surface.
19... Grid Layer.1 Xdx=0.
20... Comment Implant the boron base.
21... Implant Boron Dose=1E14 Energy=50
22... Comment Remove oxide from emitter region.
23... Etch Oxide
24... Comment Deposit arsenic doped polysilicon for emitter contacts.
25... Deposit Polysilicon, Thickness=.5 Temperature=620
... + Arsenic Concentration=1e20
26... Comment Anneal to activate base and drive-in emitter.
27... Diffusion Temperature=1000 Time=20 WetO2
28... Comment Plot the electrically Active impurity distributions.
29... Print Layer
30... Plot Active Boron Xmax=6 Clear ˆAxis Linetype=2
31... Plot Active Arsenic Xmax=6 ˆClear ˆAxis Linetype=4
32... Plot Active Antimony Xmax=6 ˆClear ˆAxis Linetype=5
33... Plot Active Net Xmax=6 ˆClear Axis Linetype=1
34... Comment Save the resulting active region.
35... Savefile Structure File=s3e2bs
36... Stop