Suprem III - Stanford Technology CAD Home Page

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Suprem-III User´s Manual
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
4 ALUMINUM 1.2000 0.0100 0.0010 292 302
3 POLYSILICON 0.4646 0.0100 0.0010 303 350 0.9035
2 OXIDE 0.0672 0.0100 0.0010 351 358
1 SILICON 1.4539 0.0050 0.0010 359 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
4 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00
3 1.3770e+16 2.2278e+16 1.3770e+16 2.2278e+16
2 0.0000e+00 1.1498e+13 0.0000e+00 1.1705e+13
1 -4.3714e+11 -4.3714e+11 4.3718e+11 4.3718e+11
sum 1.3770e+16 2.2289e+16 1.3771e+16 2.2290e+16
Integrated Dopant
layer PHOSPHORUS ARSENIC
no. active chemical active chemical
4 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00
3 8.9661e+15 1.7376e+16 4.8040e+15 4.9019e+15
2 0.0000e+00 1.0926e+13 0.0000e+00 6.7499e+11
1 2.0359e+07 2.0359e+07 1.4714e-16 1.4714e-16
sum 8.9661e+15 1.7387e+16 4.8040e+15 4.9026e+15
Integrated Dopant
layer BORON
no. active chemical
4 0.0000e+00 0.0000e+00
3 3.3427e+08 3.3427e+08
2 0.0000e+00 1.0345e+11
1 4.3716e+11 4.3716e+11
sum 4.3749e+11 5.4094e+11
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
4 1 n 0.0000 0.0000e+00 0.0000e+00
3 1 n 0.0000 1.3770e+16 2.2278e+16
2 2 n 0.0000 0.0000e+00 1.1631e+13
2 1 p 0.0465 0.0000e+00 3.6428e+10
1 1 p 0.0000 4.3714e+11 4.3718e+11
Save the structure.
End Suprem-III