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-133- Suprem-III User´s Manual Cross-section of locally oxidized NMOS device simulated in this example. Simulations through both the active (channel) region and through the field oxide region are shown. In addition, a Poisson solution through the channel region is used to extract threshold voltage.
-134- Suprem-III User´s Manual ********************************* *** Suprem-III *** *** version 1B rev. 8628 *** ********************************* Tue Oct 27 15:50:45 1987 Commands input from file: s3ex1a.in 1... Title SUPREM-III Example 1. NMOS Silicon Gate 2... Comment Active device region initial processing. 3... $ File S3EX1A 4... Comment Initialize silicon substrate. 5... Initialize Silicon, Boron Concentration=1e15 ... + Thickness=1.5 dX=.005 XdX=.02 Spaces=150 6... Comment Grow pad oxide, 400A. 7... Diffusion Temperature=1000 Time=40 DryO2 8... Comment Deposit 800A of CVD Nitride. 9... Deposit Nitride Thickness=.0800 Spaces=15 10... Comment Grow field oxide. 11... Diffusion Temperature=1000 Time=180 WetO2 12... Print Layer 13... Comment Etch to silicon surface. 14... Etch Oxide all 15... Etch Nitride all 16... Etch Oxide all 17... Comment Implant boron to shift the threshold voltage. 18... Implant Boron Dose=4e11 Energy=50 19... Comment Grow gate oxide 20... Diffusion Temperature=1050 Time=30 DryO2 HCL%=3 21... Comment Deposit polysilicon 22... Deposit Polysilicon Thickness=0.5 Temperature=600 23... Comment Heavily dope the polysilicon using POCl3 24... Diffusion Temperature=1000 Time=25 dTmin=.3 ... + Phosphorus Solidsolubility 25... Print Layer 26... Plot Chemical Boron Xmax=1.5 Clear ˆAxis Linetype=2 27... Plot Chemical Phosphorus Xmax=1.5 ˆClear ˆAxis Linetype=3 28... Plot Chemical Net Xmax=1.5 ˆClear Axis 29... Comment Save the structure at this point. The simulation runs 30... $ are split for the gate and source/drain regions. 31... Save Structure File=s3e1as 32... Stop End of SUPREM-III Example 1.
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