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-51- Suprem-III User´s Manual MSF110FA Num The orientation factor in orientation silicon for bandgap narrowing due to lattice misfit strain from high concentrations of phosphorus. (unit: ) (default: the current value.) (synonym: ) MSF111FA Num The orientation factor in orientation silicon for bandgap narrowing due to lattice misfit strain from high concentrations of phosphorus. (unit: ) (default: the current value.) (synonym: ) NAME Char The name of the impurity. (unit: ) (default: the last name specified.) (synonym: ) NE.0 Num The pre-exponential constant for Ne, the concentration at which the P+V= pairs disassociate. Used to calculate the diffusivity of phosphorus at high concentrations. (unit: atoms/cmˆ3.) (default: the current value.) (synonym: ) NE.E Num The activation energy for calculating Ne, the concentration at which the P+V= pairs disassociate. Used to calculate the diffusivity of phosphorus at high concentrations. (unit: electron volts.) (default: the current value.) (synonym: ) NITRIDE Log Specifies that the material dependent parameters apply to the impurity in silicon nitride. (unit: ) (default: false.) (synonym: ) OXIDE Log Specifies that the material dependent parameters apply to the impurity in silicon dioxide. (unit: ) (default: false.) (synonym: ) POLYSILI Log Specifies that the material dependent parameters apply to the impurity in polysilicon. (unit: ) (default: false.) (synonym: ) Q.SITES Num Effective density of segregation sites at a grain boundary. (unit: sites/cmˆ2.) (default: the current value.) (synonym: ) SILICON Log Specifies that the material dependent parameters apply to the impurity in single crystal silicon. (unit: ) (default: false.) (synonym: )
-52- Suprem-III User´s Manual The IMPURITY statement is used to input or modify the coefficients and parameters that define a given impurity. Four impurities are defined, boron, phosphorus, arsenic, and antimony. These impurities each have their own impurity coefficient statements which are aliases of the general IMPURITY statement.
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