Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
*********************************<br />
*** <strong>Suprem</strong>-<strong>III</strong> ***<br />
*** version 1B rev. 8628 ***<br />
*********************************<br />
Tue Oct 27 15:57:39 1987<br />
Commands input from file: s3ex1f.in<br />
1... Title SUPREM-<strong>III</strong> Example 1. NMOS Silicon Gate<br />
2... Comment Final isolation region processing.<br />
3... $ File s3ex1f<br />
4... Comment Initialize silicon substrate.<br />
5... Initialize Structure=s3e1es<br />
6... Comment Etch polysilicon and oxide over source/drain regions.<br />
7... Etch Polysilicon<br />
8... Etch Oxide Amount=.0700<br />
9... Comment Implant Arsenic for source/drain regions.<br />
10... Implant Arsenic Dose=5E15 Energy=150<br />
11... Comment Drive-in Arsenic and re-oxidize source/drain regions.<br />
12... Diffusion Temperature=1000 Time=30 DryO2<br />
13... Comment Deposit Phosphorus doped SiO2 using CVD.<br />
14... Deposit Oxide Thickness=.7500 Phosphorus Concentration=1e21<br />
15... Comment Reflow glass to smooth surface and dope contact holes.<br />
16... Diffusion Temperature=1000 Time=30<br />
17... Comment Deposit Aluminum.<br />
18... Deposit Aluminum Thickness=1.2 Spaces=10<br />
19... Comment Plot the chemical impurity distributions at this point.<br />
20... Print Layer<br />
21... Plot Chemical Boron Clear ˆAxis Linetype=2<br />
22... Plot Chemical Arsenic ˆClear ˆAxis Linetype=3<br />
23... Plot Chemical Phosphorus ˆClear ˆAxis Linetype=6<br />
24... Plot Chemical Net ˆClear Axis<br />
25... Comment Save the structure.<br />
26... Save Structure File=s3e1fs<br />
27... Stop End of SUPREM-<strong>III</strong> Example 1.
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